Microelectronics Journal, Volume 40

Volume 40, Number 1, January 2009

• 
  Ramdane Mahamdi, Laurent Saci, Farida Mansour, Pierre Temple-Boyer, Emmanuel Scheid, Laurent Jalabert:
  Boron diffusion and activation in polysilicon multilayer films for P⁺ MOS structure: Characterization and modeling. 1-4
• 
  Zahra Arefinia, Ali A. Orouji:
  Novel attributes in scaling issues of carbon nanotube field-effect transistors. 5-9
• 
  Abdelkader Aissat, Said Nacer, M. Bensebti, Jean-Pierre Vilcot:
  Low sensitivity to temperature compressive-strained structure quantum well laser Ga_1-xIn_xAs_1-yN_y/GaAs. 10-14
• 
  Da Chen, Jingjing Wang, Dong Xu, Yafei Zhang:
  The influence of the AlN film texture on the wet chemical etching. 15-19
• 
  Andrea De Marcellis, Giuseppe Ferri, Nicola Carlo Guerrini, Giuseppe Scotti, Vincenzo Stornelli, Alessandro Trifiletti:
  A novel low-voltage low-power fully differential voltage and current gained CCII for floating impedance simulations. 20-25
• 
  Y. C. Gerstenmaier, W. Kiffe, Gerhard K. M. Wachutka:
  Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory. 26-34
• 
  Hogyoung Kim:
  Al contacts to nanoroughened p-GaN. 35-38
• 
  Xinquan Lai, Ziyou Xu, Yanming Li, Qiang Ye, Maoli Man:
  A CMOS piecewise curvature-compensated voltage reference. 39-45
• 
  Chien-Chan Su:
  Carbon nanotube tips for surface characterization: Fabrication and properties. 46-49
• 
  Tung-Te Chu, Huilin Jiang, Liang-Wen Ji, Wei-Shun Shih, Jingchang Zhong, Ming-Jie Zhuang:
  Grain size effect of nanocrystalline ZnO on characteristics of dye-sensitized solar cells. 50-52
• 
  Terry Yuan-Fang Chen, Haw-Long Lee:
  Damping vibration of scanning near-field optical microscope probe using the Timoshenko beam model. 53-57
• 
  Qiu-lin Tan, Wendong Zhang, Chenyang Xue, Jijun Xiong, Jun Liu, Jun-hong Li, Ting Liang:
  Design, fabrication and characterization of pyroelectric thin film and its application for infrared gas sensors. 58-62
• 
  Jungjin Yang, C. K. Suman, Changhee Lee:
  Effect of type-II quantum well of m-MTDATA/alpha-NPD on the performance of green organic light-emitting diodes. 63-65
• 
  Luís da Silva Zambom, Ronaldo Domingues Mansano, Ana Paula Mousinho:
  Low-temperature deposition of silicon oxide and silicon nitride by reactive magnetron sputtering. 66-69
• 
  Kun Cao, Zhanguo Chen, Ce Ren, Gang Jia, Tiechen Zhang, Xiuhuan Liu, Bao Shi, Jianxun Zhao:
  Measurement of second-order nonlinear optical susceptibility of cBN crystal synthesized at high pressure and high temperature. 70-73
• 
  Oleg Maksimov:
  Structural and optical properties of the polycrystalline ZnO films synthesized via oxidative annealing of ZnSe/YSZ heterostructures. 74-77
• 
  Lijun Tang, Kairui Zhang, Shang Chen, Guojun Zhang, Guowen Liu:
  MEMS inclinometer based on a novel piezoresistor structure. 78-82
• 
  Cuiping Jia, Jingran Zhou, Wei Dong, Weiyou Chen:
  Design and fabrication of silicon-based 8×8 MEMS optical switch array. 83-86
• 
  Qi Wang, Xiaomin Ren, Hui Huang, Yongqing Huang, Shiwei Cai:
  Growth of B_xGa_1-xAs, B_xAl_1-xAs and B_xGa_1-x-yIn_yAs epilayers on (0 0 1)GaAs by low pressure metalorganic chemical vapor deposition. 87-91
• 
  Yingtao Li, Su Liu:
  Using different work function nanocrystal materials to improve the retention characteristics of nonvolatile memory devices. 92-94
• 
  Elias Kougianos, Saraju P. Mohanty:
  Impact of gate-oxide tunneling on mixed-signal design and simulation of a nano-CMOS VCO. 95-103
• 
  Asghar Asgari, Elnaz Ahmadi, Manouchehr Kalafi:
  Al_xGa_1-xN/GaN multi-quantum-well ultraviolet detector based on p-i-n heterostructures. 104-107
• 
  X. D. Li, D. W. Zhang, Zhuo Sun, Y. W. Chen, Sumei Huang:
  Metal-free indoline-dye-sensitized TiO₂ nanotube solar cells. 108-114
• 
  Rujia Zou, Guannan Zou, Chunrui Wang, Shaolin Xue, Jian Liu, Guangping Ren:
  Improving the emission characteristics of a carbon nanotube film in NaCl electrolyte. 115-119
• 
  Monem Krichen, Abdelaziz Zouari, Adel Ben Arab:
  A simple analytical model of thin films crystalline silicon solar cell with quasi-monocrystalline porous silicon at the backside. 120-125
• 
  Keivan Navi, Mohammad Hossein Moaiyeri, Reza Faghih Mirzaee, Omid Hashemipour, Babak Mazloom Nezhad:
  Two new low-power Full Adders based on majority-not gates. 126-130
• 
  Lei Gu, Zhengzheng Wu, Xinxin Li:
  An wide-range tunable on-chip radio-frequency LC-tank formed with a post-CMOS-compatible MEMS fabrication technique. 131-136
• 
  Sangsik Park, Hyungsoo Uh:
  The effect of size on photodiode pinch-off voltage for small pixel CMOS image sensors. 137-140
• 
  Mourad Fakhfakh:
  A novel Alienor-based heuristic for the optimal design of analog circuits. 141-148
• 
  Quandai Wang, Yugang Duan, Yucheng Ding, Bingheng Lu, Jiawei Xiang, Lianfa Yang:
  Investigation on LIGA-like process based on multilevel imprint lithography. 149-155
• 
  José M. de la Rosa, Rafael Castro-López, Alonso Morgado, Edwin C. Becerra-Alvarez, Rocío del Río, Francisco V. Fernández, Maria Belen Pérez-Verdú:
  Adaptive CMOS analog circuits for 4G mobile terminals - Review and state-of-the-art survey. 156-176
• 
  Jordi Sacristán-Riquelme, Fredy Segura-Quijano, Antoni Baldi, M. Teresa Osés:
  Low power impedance measurement integrated circuit for sensor applications. 177-184
• 
  Eoin Mc Gibney, John Barrett:
  Application of a combined methodology for extraction of the electrical model of a lead frame chip-scale package. 185-192
• 
  Sh. M. Eladl:
  Modeling of ionizing radiation effect on optoelectronic-integrated devices (OEIDs). 193-196
• 
  Shuguang Han, Baoyong Chi, Zhihua Wang:
  New implementation of high linear LNA using derivative superposition method. 197-201

Volume 40, Number 2, February 2009

• 
  Klaus Lischka, Andreas Waag, H. Mariette, Jörg Neugebauer:
  Wide band gap semiconductor nanostructures for optoelectronic applications. 203
• 
  Donat Josef As:
  Cubic group-III nitride-based nanostructures - basics and applications in optoelectronics. 204-209
• 
  Klaus Thonke, Martin Schirra, Raoul Schneider, Anton Reiser, Günther M. Prinz, Martin Feneberg, Johannes Biskupek, Ute Kaiser, Rolf Sauer:
  The role of stacking faults and their associated 0.13 ev acceptor state in doped and undoped ZnO layers and nanostructures. 210-214
• 
  Steffen Michaelis de Vasconcellos, Alexander Pawlis, Christoph Arens, Marina Panfilova, A. Zrenner, D. Schikora, Klaus Lischka:
  Exciton spectroscopy on single CdSe/ZnSe quantum dot photodiodes. 215-217
• 
  A. Dmytruk, I. Dmitruk, I. Blonskyy, Rodion V. Belosludov, Yoshiyuki Kawazoe, A. Kasuya:
  ZnO clusters: Laser ablation production and time-of-flight mass spectroscopic study. 218-220
• 
  Marina Panfilova, Alexander Pawlis, Christoph Arens, Steffen Michaelis de Vasconcellos, G. Berth, K. P. Hüsch, V. Wiedemeier, A. Zrenner, Klaus Lischka:
  Micro-Raman imaging and micro-photoluminescence measurements of strain in ZnMgSe/ZnSe microdiscs. 221-223
• 
  E. Latu-Romain, P. Gilet, G. Feuillet, P. Noel, J. Garcia, F. Lévy, A. Chelnokov:
  Optical and electrical characterizations of vertically integrated ZnO nanowires. 224-228
• 
  V. A. Karpyna, A. A. Evtukh, M. O. Semenenko, V. I. Lazorenko, G. V. Lashkarev, V. D. Khranovskyy, Rositsa Yakimova, D. A. Fedorchenko:
  Electron field emission from ZnO self-organized nanostructures and doped ZnO: Ga nanostructured films. 229-231
• 
  Junjie Zhu, Lasse Vines, Titta Aaltonen, Andrej Kuznetsov:
  Correlation between nitrogen and carbon incorporation into MOVPE ZnO at various oxidizing conditions. 232-235
• 
  Fabio Trani, M. Causà, Stefano Lettieri, Antonio Setaro, Domenico Ninno, Vincenzo Barone, Pasqualino Maddalena:
  Role of surface oxygen vacancies in photoluminescence of tin dioxide nanobelts. 236-238
• 
  J. Petersen, C. Brimont, M. Gallart, O. Crégut, G. Schmerber, P. Gilliot, B. Hönerlage, C. Ulhaq-Bouillet, J. L. Rehspringer, C. Leuvrey, Silviu Colis, A. Slaoui, A. Dinia:
  Optical properties of ZnO thin films prepared by sol-gel process. 239-241
• 
  M. Rosina, Pierre Ferret, Pierre-Henri Jouneau, Ivan-Christophe Robin, F. Lévy, G. Feuillet, M. Lafossas:
  Morphology and growth mechanism of aligned ZnO nanorods grown by catalyst-free MOCVD. 242-245
• 
  H. Bieber, G. Versini, S. Barre, J.-L. Loison, G. Schmerber, C. Ulhaq-Bouillet, Silviu Colis, A. Dinia:
  Structural and magnetic study of hard-soft systems with ZnO barrier grown by pulsed laser deposition. 246-249
• 
  Ivan-Christophe Robin, M. Lafossas, J. Garcia, M. Rosina, E. Latu-Romain, Pierre Ferret, P. Gilet, A. Tchelnokov, M. Azize, Joel Eymery, G. Feuillet:
  Growth and characterization of ZnO nanowires on p-type GaN. 250-252
• 
  Adrien Tribu, Gregory Sallen, Thomas Aichele, Catherine Bougerol, Régis André, Jean-Philippe Poizat, Serge Tatarenko, Kuntheak Kheng:
  Bright CdSe quantum dot inserted in single ZnSe nanowires. 253-255
• 
  Alexander Pawlis, Marina Panfilova, K. Sanaka, Thaddeus D. Ladd, Donat Josef As, Klaus Lischka, Yoshihisa Yamamoto:
  Low-threshold ZnSe microdisk laser based on fluorine impurity bound-exciton transitions. 256-258
• 
  Mahua Biswas, Enda McGlynn, M. O. Henry:
  Carbothermal reduction growth of ZnO nanostructures on sapphire - comparisons between graphite and activated charcoal powders. 259-261
• 
  B. Dierre, X. L. Yuan, Takashi Sekiguchi:
  Effect of hydrogenation on the cathodoluminescence properties of ZnO single crystals. 262-264
• 
  Y. Belghazi, M. Ait Aouaj, M. El Yadari, G. Schmerber, C. Ulhaq-Bouillet, C. Leuvrey, Silviu Colis, M. Abd-lefdil, A. Berrada, A. Dinia:
  Elaboration and characterization of Co-doped ZnO thin films deposited by spray pyrolysis technique. 265-267
• 
  A. El Manouni, M. Tortosa, F. J. Manjón, Miguel Mollar, Bernabé Marí, J. F. Sánchez-Royo:
  Effect of annealing on Zn_1-xCo_xO thin films prepared by electrodeposition. 268-271
• 
  Gun Hee Kim, Dong Lim Kim, Byung Du Ahn, Sang Yeol Lee, Hyun Jae Kim:
  Investigation on doping behavior of copper in ZnO thin film. 272-275
• 
  Miguel Mollar, M. Tortosa, R. Casasús, Bernabé Marí:
  Electrodepositing Zn_xMn_yO_z alloys from zinc oxide to manganese oxide. 276-279
• 
  Arne Behrends, Andrey Bakin, Andreas Waag:
  Investigation of ZnO nanopillars fabrication in a new Thomas Swan close coupled showerhead MOCVD reactor. 280-282
• 
  Jae-Hoon Kim, Hooyoung Song, Eun Kyu Kim:
  Study of magnetic impurity as defects in ZnO grown by pulsed laser deposition. 283-285
• 
  C. Y. Zhu, C. C. Ling, G. Brauer, W. Anwand, W. Skorupa:
  Deep-level defects study of arsenic-implanted ZnO single crystal. 286-288
• 
  Markus R. Wagner, H. W. Kunert, A. G. J. Machatine, A. Hoffmann, P. Niyongabo, Johan Malherbe, J. Barnas:
  Bound and free excitons in ZnO. Optical selection rules in the absence and presence of time reversal symmetry. 289-292
• 
  Tomasz Krajewski, E. Guziewicz, Marek Godlewski, Lukasz Wachnicki, I. A. Kowalik, A. Wojcik-Glodowska, M. Lukasiewicz, K. Kopalko, V. Osinniy, M. Guziewicz:
  The influence of growth temperature and precursors' doses on electrical parameters of ZnO thin films grown by atomic layer deposition technique. 293-295
• 
  C. Chandrinou, Nikos Boukos, C. Stogios, A. Travlos:
  PL study of oxygen defect formation in ZnO nanorods. 296-298
• 
  Woo-Sun Lee, Gwon-Woo Choi, Yong-Jin Seo:
  Surface planarization of ZnO thin film for optoelectronic applications. 299-302
• 
  A. Kabir, Marina Panfilova, Alexander Pawlis, H. P. Wagner, Klaus Lischka:
  Well-width dependence of the phase coherent photorefractive effect in ZnSe quantum wells. 303-305
• 
  Anton Reiser, V. Raeesi, Günther M. Prinz, Martin Schirra, Martin Feneberg, U. Röder, Rolf Sauer, Klaus Thonke:
  Growth of high-quality, uniform c-axis-oriented zinc oxide nano-wires on a-plane sapphire substrate with zinc oxide templates. 306-308
• 
  Mafalda Macatrão, Marco Peres, C. P. L. Rubinger, M. J. Soares, L. C. Costa, F. M. Costa, Teresa Monteiro, Nuno Franco, Eduardo Alves, B. Z. Saggioro, Marcello R. B. Andreeta, A. C. Hernandes:
  Structural and optical properties on thulium-doped LHPG-grown Ta₂O₅ fibres. 309-312
• 
  Hooyoung Song, Jae-Hoon Kim, Eun Kyu Kim:
  Studies of defect states of ZnO thin films under different annealing conditions. 313-315
• 
  Joshua B. Halpern, A. Bello, J. Gilcrease, Gary L. Harris, Maoqi He:
  Biphasic GaN nanowires: Growth mechanism and properties. 316-318
• 
  Alexandru Müller, George Konstantinidis, Mircea Dragoman, Dan Neculoiu, Adrian Dinescu, M. Androulidaki, M. Kayambaki, Antonios Stavrinidis, Dan Vasilache, Cristina Buiculescu, I. Petrini, Athanasios Kostopoulos, D. Dascalu:
  GaN membrane-supported UV photodetectors manufactured using nanolithographic processes. 319-321
• 
  Carsten Buchheim, M. Röppischer, Rüdiger Goldhahn, G. Gobsch, Christoph Cobet, Christoph Werner, Norbert Esser, Armin Dadgar, Matthias Wieneke, Jürgen Bläsing, Alois Krost:
  Influence of anisotropic strain on excitonic transitions in a-plane GaN films. 322-324
• 
  L. Lahourcade, Julien Renard, Prem K. Kandaswamy, Bruno Gayral, M. P. Chauvat, Prem Ruterana, Eva Monroy:
  PAMBE growth of (1 1 2- 2)-oriented GaN/AlN nanostructures on m-sapphire. 325-327
• 
  D. Lagarde, Andrea Balocchi, Hélène Carrère, P. Renucci, T. Amand, S. Founta, H. Mariette, Xavier Marie:
  Exciton spin dynamics in zinc-blende GaN/AlN quantum dots: Temperature dependence. 328-330
• 
  L. Rigutti, Antonio Castaldini, Anna Cavallini:
  Effects of internal fields on deep-level emission in InGaN/GaN quantum-well light-emitting diodes. 331-332
• 
  S. Fündling, U. Jahn, A. Trampert, H. Riechert, H.-H. Wehmann, Andreas Waag:
  Metal-organic vapour-phase epitaxy of gallium nitride nanostructures for optoelectronic applications. 333-335
• 
  Prem K. Kandaswamy, H. Machhadani, E. Bellet-Amalric, L. Nevou, Maria Tchernycheva, L. Lahourcade, Francois H. Julien, Eva Monroy:
  Strain effects in GaN/AlN multi-quantum-well structures for infrared optoelectronics. 336-338
• 
  S. Leconte, L. Gerrer, Eva Monroy:
  Electronic transport through GaN/AlN single barriers: Effect of polarisation and dislocations. 339-341
• 
  Huaping Lei, Jun Chen, Xunya Jiang, Gérard Nouet:
  Microstructure analysis in strained-InGaN/GaN multiple quantum wells. 342-345
• 
  B. Arnaudov, D. S. Domanevskii, S. Evtimova, Ch. Ivanov, R. Kakanakov:
  Band-filling effect on the light emission spectra of InGaN/GaN quantum wells with highly doped barriers. 346-348
• 
  Fernando Bernabé Naranjo, Miguel González-Herráez, Sirona Valdueza-Felip, H. Fernández, Javier Solis, Susana Fernández, Eva Monroy, J. Grandal, M. A. Sánchez-García:
  Non-linear properties of nitride-based nanostructures for optically controlling the speed of light at 1.5 µm. 349-352
• 
  Mao-Nan Chang, Ruo-Syuan Lin, Hsueh-Hsing Liu, Hung-Min Lin, Hung-Cheng Lin, Jen-Inn Chyi:
  Investigations of photo-assisted conductive atomic force microscopy on III-nitrides. 353-356
• 
  Fayçal Djeffal, Djemai Arar, N. Lakhdar, Toufik Bendib, Zohir Dibi, M. Chahdi:
  An approach based on particle swarm computation to study the electron mobility in wurtzite GaN. 357-359
• 
  Thorvald G. Andersson, X. Y. Liu, T. Aggerstam, Petter Holmström, S. Lourdudoss, Lars Thylén, Y. L. Chen, C. H. Hsieh, I. Lo:
  Macroscopic defects in GaN/AlN multiple quantum well structures grown by MBE on GaN templates. 360-362
• 
  A. Touré, I. Halidou, Zohra Benzarti, Tarek Boufaden:
  Growth temperature effect on MOVPE Si-doped GaN: Thermodynamic modeling. 363-366
• 
  Elena Tschumak, Marcio Peron Franco de Godoy, Donat Josef As, Klaus Lischka:
  Insulating substrates for cubic GaN-based HFETs. 367-369
• 
  R. Kudrawiec, M. Motyka, J. Misiewicz, B. Paszkiewicz, R. Paszkiewicz, M. Tlaczala:
  Contactless electroreflectance study of band bending for undoped, Si- and Mg-doped GaN layers and AlGaN/GaN transistor heterostructures. 370-372
• 
  S. M. Kang, T. I. Shin, Duc V. Dinh, J. H. Yang, Sang-Woo Kim, D. H. Yoon:
  Synthesis of GaN nanowires and nanorods via self-growth mode control. 373-376
• 
  Marco Peres, Sérgio Magalhães, Nuno Franco, M. J. Soares, A. J. Neves, Eduardo Alves, Katharina Lorenz, Teresa Monteiro:
  Influence of the AlN molar fraction on the structural and optical properties of praseodymium-doped Al_xGa_1-xN (0<=x<=1) alloys. 377-380
• 
  Maria Elena Fragala, Graziella Malandrino:
  Characterization of ZnO and ZnO: Al films deposited by MOCVD on oriented and amorphous substrates. 381-384

Volume 40, Number 3, March 2009

• 
  Abdelkader Saïdane:
  Preface: Workshop of recent advances on low dimensional structures and devices (WRA-LDSD). 385
• 
  Shumin Wang, Huan Zhao, Göran Adolfsson, Yongqiang Wei, Q. X. Zhao, Johan S. Gustavsson, Mahdad Sadeghi, Anders Larsson:
  Dilute nitrides and 1.3 µm GaInNAs quantum well lasers on GaAs. 386-391
• 
  R. Kudrawiec, M. Gladysiewicz, M. Motyka, J. Misiewicz, G. Cywinski, Marcin Siekacz, Czeslaw Skierbiszewski:
  Contactless electroreflectance of GaInN/AlInN multi quantum wells: The issue of broadening of optical transitions. 392-395
• 
  Benjamin Royall, N. Balkan:
  Dilute nitride n-i-p-i solar cells. 396-398
• 
  L. Buckle, S. D. Coomber, T. Ashley, P. H. Jefferson, David Walker, T. D. Veal, Chris F. McConville, P. A. Thomas:
  Growth and characterisation of dilute antimonide nitride materials for long-wavelength applications. 399-402
• 
  Y. Sun, Naci Balkan, Ayse Erol, Cetin M. Arikan:
  Electronic transport in n- and p-type modulation-doped GaInNAs/GaAs quantum wells. 403-405
• 
  Mükremin Yilmaz, Y. Sun, Naci Balkan, Bülent Ulug, A. Ulug, M. Sopanen, O. Reentilä, M. Mattila, Chantal Fontaine, A. Arnoult:
  Photoluminescence in n and p modulation-doped GaInNAs/GaAs quantum wells. 406-409
• 
  A. Brannick, N. A. Zakhleniuk, B. K. Ridley, Lester F. Eastman, James R. Shealy, William J. Schaff:
  Hydrodynamic simulation of surface traps in the AlGaN/GaN HEMT. 410-412
• 
  S. B. Lisesivdin, N. Balkan, Ekmel Özbay:
  A simple parallel conduction extraction method (SPCEM) for MODFETs and undoped GaN-based HEMTs. 413-417
• 
  Alejandro Molina-Sánchez, A. García-Cristóbal, Andres Cantarero:
  Tight-binding study of the optical properties of GaN/AlN polar and nonpolar quantum wells. 418-420
• 
  Andenet Alemu, Alexandre Freundlich:
  Opportunities in dilute nitride III-V semiconductors quantum confined p-i-n solar cells for single carrier resonant tunneling. 421-423
• 
  J. Valenzuela, Samuel Mil'shtein:
  Quantum well model of a conjugated polymer heterostructure solar cell. 424-426
• 
  Macho Anani, Christian Mathieu, Mohammed Khadraoui, Zouaoui Chama, Sara Lebid, Youcef Amar:
  High-grade efficiency III-nitrides semiconductor solar cell. 427-434
• 
  Alex Axelevitch, Gady Golan:
  Novel silicon high sensitive photonic sensor. 435-438
• 
  Álvaro Miranda, Miguel Cruz-Irisson, C. Wang:
  Modelling of electronic and phononic states of Ge nanostructures. 439-441
• 
  Fauzia Jabeen, Silvia Rubini, Faustino Martelli:
  Growth of III-V semiconductor nanowires by molecular beam epitaxy. 442-445
• 
  Bin Li, Bart Partoens, François M. Peeters, Wim Magnus:
  Dielectric mismatch effect on coupled impurity states in a freestanding nanowire. 446-448
• 
  Artur Medvid, Igor Dmitruk, Pavels Onufrijevs, Iryna Pundyk:
  Laser-induced self-organization of nano-wires on SiO₂/Si interface. 449-451
• 
  P. Das Kanungo, A. Wolfsteller, N. D. Zakharov, P. Werner, U. Gösele:
  Enhanced electrical properties of nominally undoped Si/SiGe heterostructure nanowires grown by molecular beam epitaxy. 452-455
• 
  Álvaro Miranda, Ruben Vázquez-Medina, Alejandro Díaz-Méndez, Miguel Cruz-Irisson:
  Optical matrix elements in tight-binding approach of hydrogenated Si nanowires. 456-458
• 
  Adalberto Alejo-Molina, José J. Sánchez-Mondragón, Daniel A. May-Arrioja, David Romero, Jesús Escobedo-Alatorre, Álvaro Zamudio Lara:
  Complex dispersion relation of 1D dielectric photonic crystal with thin metallic layers. 459-461
• 
  Chandani Rajapaksha, Alex Freundlich:
  A real-time quantitative assessment of self-assembled quantum dots by reflection high-energy electron diffraction. 462-464
• 
  Giovanna Trevisi, Luca Seravalli, P. Frigeri, Mirko Prezioso, J. C. Rimada, E. Gombia, R. Mosca, L. Nasi, C. Bocchi, S. Franchi:
  The effects of quantum dot coverage in InAs/(In)GaAs nanostructures for long wavelength emission. 465-468
• 
  P. J. Carrington, V. A. Solov'ev, Qiandong Zhuang, S. V. Ivanov, A. Krier:
  InSb quantum dot LEDs grown by molecular beam epitaxy for mid-infrared applications. 469-472
• 
  Jong Chang Yi:
  Anisotropic transport properties of quantum dot arrays fabricated by the edge-defined nanowires. 473-475
• 
  Mohammad Abdulaziz Alduraibi, C. Mitchell, S. Chakraborty, Mohamed Missous:
  Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures. 476-478
• 
  R. J. Kashtiban, Ursel Bangert, Mohamed Missous:
  Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness. 479-482
• 
  Pairot Moontragoon, Nenad Vukmirovic, Zoran Ikonic, Paul Harrison:
  Electronic structure and optical transitions in Sn and SnGe quantum dots in a Si matrix. 483-485
• 
  T. Nuytten, Manus Hayne, Mohamed Henini, V. V. Moshchalkov:
  Temperature dependence of the photoluminescence of self-assembled InAs/GaAs quantum dots studied in high magnetic fields. 486-488
• 
  Anna Trojnar, Arkadiusz Wójs:
  Optical spectra of charged anisotropic quantum boxes. 489-491
• 
  A. Marent, M. Geller, Dieter Bimberg:
  A novel nonvolatile memory based on self-organized quantum dots. 492-495
• 
  Jan Vanis, Jirí Zelinka, Václav Malina, Mohamed Henini, Jirí Pangrác, Karel Melichar, Eduard Hulicius, Filip Sroubek, Jarmila Walachová:
  Preliminary comparison of ballistic electron emission spectroscopy measurements on InAs quantum dots in a GaAs/AlGaAs heterostructure grown by MBE and MOVPE. 496-498
• 
  J. P. Coe, A. Sudbery, Irene D'Amico:
  Entanglement in GaAs and CdSe quantum dots: Exact calculations and DFT approximations. 499-501
• 
  Thomas E. Hodgson, Lorenza Viola, Irene D'Amico:
  Effect of quantum dot shape on dynamical dephasing suppression in exciton qubits under applied electric field. 502-504
• 
  Anna Sitek, Pawel Machnikowski:
  Collective optical response from quantum dot molecules. 505-506
• 
  A. G. Unil Perera, P. V. V. Jayaweera, G. Ariyawansa, S. G. Matsik, K. Tennakone, M. Buchanan, H. C. Liu, Xiaohua Su, Pallab K. Bhattacharya:
  Room temperature nano- and microstructure photon detectors. 507-511
• 
  Jean-Michel Chauveau, Christian Morhain, Monique Teisseire, M. Laügt, Christiane Deparis, Jesus Zúñiga-Pérez, Borge Vinter:
  (Zn, Mg)O/ZnO-based heterostructures grown by molecular beam epitaxy on sapphire: Polar vs. non-polar. 512-516
• 
  Yong-ning He, Shiguang Shang, Wuyuan Cui, Xin Li, Chang-Chun Zhu, Xun Hou:
  Investigation of luminescence properties of ZnO nanowires at room temperature. 517-519
• 
  Rachit Sharma, Jessica P. Mondia, Jan Schäfer, Wilson Smith, S.-H. Li, Y.-P. Zhao, Z. H. Lu, Lijun Wang:
  Measuring the optical properties of a trapped ZnO tetrapod. 520-522
• 
  Nacir Tit, Ihab M. Obaidat:
  Transition behaviors from coupled-to-uncoupled CdTe-ZnTe symmetric versus asymmetric double quantum wells. 523-526
• 
  Ihab M. Obaidat, Nacir Tit:
  Quantum-confinement versus strain effects in the Zn(Cd)S(Se) family of superlattices. 527-529
• 
  Richard Moug, Christine Bradford, Arran Curran, Frauke Izdebski, Ian A. Davidson, Kevin A. Prior, Richard J. Warburton:
  Development of an epitaxial lift-off technology for II-VI nanostructures using ZnMgSSe alloys. 530-532
• 
  Vesel Haxha, Raman Garg, Max A. Migliorato, I. W. Drouzas, José María Ulloa, P. M. Koenraad, M. J. Steer, H. Y. Liu, Mark Hopkinson, D. J. Mowbray:
  Empirical bond order potential calculations of the elastic properties of epitaxial InGaSbAs layers. 533-536
• 
  Robert Kudrawiec, P. Poloczek, Jan Misiewicz, M. Shafi, J. Ibáñez, R. H. Mari, Mohamed Henini, M. Schmidbauer, S. V. Novikov, Lyudmila Turyanska, Sergio I. Molina, D. L. Sales, M. F. Chisholm:
  Photomodulated transmittance of GaBiAs layers grown on (0 0 1) and (3 1 1)B GaAs substrates. 537-539
• 
  Ismail Saad, Michael L. P. Tan, Ing Hui Hii, Razali Ismail, Vijay K. Arora:
  Ballistic mobility and saturation velocity in low-dimensional nanostructures. 540-542
• 
  Aimen Boubaker, M. Troudi, Nabil Sghaier, A. Souifi, Nicolas Baboux, A. Kalboussi:
  Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator. 543-546
• 
  Mohammad Taghi Ahmadi, Hui Houg Lau, Razali Ismail, Vijay K. Arora:
  Current-voltage characteristics of a silicon nanowire transistor. 547-549
• 
  Mohammad Abdulaziz Alduraibi, C. Mitchell, S. Chakraborty, Mohamed Missous:
  Interaction of low-temperature surfactant-grown InAs superlattice layers with arsenic precipitates. 550-553
• 
  Samson Mil'shtein, A. Churi, C. Gil:
  Is HEMT operating in 2D mode? 554-557
• 
  Kamil Pierscinski, Dorota Pierscinska, Maciej Bugajski, Christian Manz, Marcel Rattunde:
  Investigation of thermal management in optically pumped, antimonide VECSELs. 558-561
• 
  Jaroslav Kovác, Jaroslava Skriniarová, Martin Florovic, J. Jakabovic, Jozef Chovan, R. Srnánek, A. Vincze, B. Sciana, D. Radziewicz, Iwona Zborowska-Lindert, M. Tlaczala:
  Preparation and properties of Zn delta-doped GaAs/AlGaAs heterojunction phototransistor. 562-564
• 
  Kamil Kosiel, Justyna Kubacka-Traczyk, Piotr Karbownik, Anna Szerling, Jan Muszalski, Maciej Bugajski, Przemek Romanowski, Jaroslaw Gaca, Marek Wójcik:
  Molecular-beam epitaxy growth and characterization of mid-infrared quantum cascade laser structures. 565-569
• 
  O'Dae Kwon, D. K. Kim, J. H. Yoon, Y. C. Kim, Y. H. Jang, M. H. Shin:
  Photonic quantum ring laser of 3D whispering cave mode. 570-573
• 
  Daniel A. May-Arrioja, Nathan Bickel, Adalberto Alejo-Molina, Miguel Torres-Cisneros, José J. Sánchez-Mondragón, Patrick LiKamWa:
  Intermixing of InP-based multiple quantum wells for integrated optoelectronic devices. 574-576
• 
  James Mc Tavish, Zoran Ikonic, Dragan Indjin, Paul Harrison:
  Intervalley scattering in GaAs/AlGaAs quantum wells and quantum cascade lasers. 577-580
• 
  Ismail Saad, Michael L. P. Tan, Aaron C. E. Lee, Razali Ismail, Vijay K. Arora:
  Scattering-limited and ballistic transport in a nano-CMOS circuit. 581-583
• 
  V. B. Verma, Victor Christopher Elarde, J. J. Coleman:
  Low-temperature electroluminescence from an ordered nanopore array diode laser. 584-587
• 
  P. D. L. Judson, K. M. Groom, D. T. D. Childs, Mark Hopkinson, Nikola Krstajic, Richard A. Hogg:
  Maximising performance of optical coherence tomography systems using a multi-section chirped quantum dot superluminescent diode. 588-591
• 
  Ichiro Shibasaki, Hirotaka Geka, Shuichi Ishida, Kenichi Oto, Tomoyuki Ishihara, Takahide Yoshida:
  Transport properties and observation of quantum Hall effects of InAs_0.1Sb_0.9 thin layers sandwiched between Al_0.1In_0.9Sb layers. 592-594
• 
  J. Jakabovic, Jaroslav Kovác, Martin Weis, Daniel Hasko, R. Srnánek, Peter Valent, Roland Resel:
  Preparation and properties of thin parylene layers as the gate dielectrics for organic field effect transistors. 595-597
• 
  Hoa T. Nguyen, Gianluca Gubbiotti, Marco Madami, S. Tacchi, M. G. Cottam:
  Brillouin light scattering study of the spin dynamics in nanoscale permalloy stripes: Theory and experiment. 598-600
• 
  Raman Garg, Vesel Haxha, Max A. Migliorato, Adrien Hue, G. P. Srivastava, Thomas Hammerschmidt:
  Strain dependence of piezoelectric coefficients for pseudomorphically grown semiconductors. 601-603
• 
  Lei Yin, Hongzhong Liu, Yucheng Ding, Hongbo Lan, Bingheng Lu:
  Fabrication of carbon nanotube arrays for field emission and sensor devices by nanoimprint lithography. 604-607
• 
  Ho Sze Phing, Jalil Ali, Rosly Abdul Rahman, Saktioto:
  Growth dynamics and characteristics of fabricated Fiber Bragg Grating using phase mask method. 608-610
• 
  Goran Isic, V. Milanovic, Jelena Radovanovic, Dragan Indjin, Zoran Ikonic, Paul Harrison:
  Nonparabolicity effects and the spin-split electron dwell time in symmetric III-V double-barrier structures. 611-614
• 
  T. Izák, Marian Vojs, Marián Veselý, Jaroslava Skriniarová, I. Novotný, Miroslav Michalka, R. Redhammer:
  Electrical property dependence on thickness and morphology of nanocrystalline diamond thin films. 615-617
• 
  Miguel Torres-Cisneros, Celso Velásquez Ordóñez, José J. Sánchez-Mondragón, A. Campero, Oscar Gerardo Ibarra-Manzano, Daniel A. May-Arrioja, Hector Plascencia-Mora, A. Espinoza-Calderón, Igor A. Sukhoivanov:
  Synthesis and optical characterization of Ag⁰ nanoparticles. 618-620
• 
  Miguel Torres-Cisneros, Naohisa Yanagihara, B. Gonzalez-Rolon, M. A. Meneses-Nava, Oscar Gerardo Ibarra-Manzano, Daniel A. May-Arrioja, José J. Sánchez-Mondragón, Eduardo Aguilera Gómez, Luz Antonio Aguilera-Cortés:
  Synthesis and nonlinear optical behavior of Ag nanoparticles in PMMA. 621-623
• 
  R. Al Asmar, S. Youssef, Y. Zaatar, J. Podlecki, C. Eid, A. Foucaran:
  Hyper frequency modeling of resonated systems based on piezoelectric LiTaO₃ thin layers. 624-627
• 
  Hisashi Shima, Yukio Tamai:
  Oxide nanolayer improving RRAM operational performance. 628-632
• 
  Apurba Laha, E. Bugiel, Rytis Dargis, Dominik Schwendt, M. Badylevich, V. V. Afanasev, A. Stesmans, Andreas Fissel, H. Jörg Osten:
  Integration of low dimensional crystalline Si into functional epitaxial oxides. 633-637
• 
  A. Díaz-Méndez, J. V. Marquina-Pérez, Miguel Cruz-Irisson, Ruben Vázquez-Medina, José Luis Del-Río-Correa:
  Chaotic noise MOS generator based on logistic map. 638-640
• 
  J. J. Andrade, A. G. Brasil, P. M. A. de Farias, Adriana Fontes, B. S. Santos:
  Synthesis and characterization of blue emitting ZnSe quantum dots. 641-643
• 
  Ke Sun, Milana Vasudev, Hye-Son Jung, Jianyong Yang, Ayan Kar, Yang Li, Kitt Reinhardt, Preston T. Snee, Michael A. Stroscio, Mitra Dutta:
  Applications of colloidal quantum dots. 644-649
• 
  Marian Vojs, E. Zdravecká, Marian Marton, P. Bohác, L. Franta, Marián Veselý:
  Properties of amorphous carbon layers for bio-tribological applications. 650-653

Volume 40, Numbers 4-5, April - May 2009

Special Issue: European Nano Systems (ENS 2007)

• 
  Bernard Courtois:
  European Nano Systems 2007. 655
• 
  Catherine Dezan, Ciprian Teodorov, Loïc Lagadec, Michael Leuchtenburg, Teng Wang, Pritish Narayanan, Csaba Andras Moritz:
  Towards a framework for designing applications onto hybrid nano/CMOS fabrics. 656-664
• 
  Loïc Lagadec, Bernard Pottier, Damien Picard:
  Toolset for nano-reconfigurable computing. 665-672
• 
  Y. Cedeño-Mattei, O. Perales-Pérez:
  Synthesis of high-coercivity cobalt ferrite nanocrystals. 673-676
• 
  E. Calderón-Ortiz, O. Perales-Pérez, Paul M. Voyles, G. Gutierrez, M. S. Tomar:
  Mn_xZn_1-xFe_2-yR_yO₄ (R=Gd, Eu) ferrite nanocrystals for magnetocaloric applications. 677-680
• 
  S. Schreck, M. Rohde:
  Preparation and characterization of ceramics laser alloyed with WO₃ and CuO nanopowders. 681-686
• 
  E. S. Vasilyeva, O. V. Tolochko, B. K. Kim, D. W. Lee, D. S. Kim:
  Synthesis of tungsten disulphide nanoparticles by the chemical vapor condensation method. 687-691
• 
  Shuhei Inoue, Kazuya Nomura, Yukihiko Matsumura:
  Influence of catalyst supporters on catalyst nanoparticles in synthesis of single-walled carbon nanotubes. 692-696
• 
  Jan Voves, Zbynek Sobán, Michal Jelínek, Volodimir Komarnickij, Miroslav Cukr, Vít Novák:
  Nanostructures defined by the local oxidation of the ferromagnetic GaMnAs layer. 697-705
• 
  Peter Klason, Mohammad Mahbubur Rahman, Q.-H. Hu, Omer Nur, R. Turan, Magnus Willander:
  Fabrication and characterization of p-Si/n-ZnO heterostructured junctions. 706-710

Special Issue: International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008)

• 
  Gil de Aquino Farias, Jeanlex S. de Sousa, Eudenílson L. Albuquerque, Mohamed Henini:
  International Conference on Superlattices, Nanostructures and Nanodevices (ICSNN 2008). 711
• 
  S. A. Mikhailov:
  Non-linear graphene optics for terahertz applications. 712-715
• 
  Anthony R. Wright, Junfeng Liu, Zhongshui Ma, Z. Zeng, Wen Xu, Chao Zhang:
  Thermodynamic properties of graphene nanoribbons under zero and quantizing magnetic fields. 716-718
• 
  Timo Hyart, Natalia V. Alexeeva, Jussi Mattas, Kirill N. Alekseev:
  Possible THz Bloch gain in dc-ac-driven superlattices. 719-721
• 
  Xiulai Xu, Frederic Brossard, Kiyotaka Hammura, David A. Williams, B. Alloing, L. H. Li, Andrea Fiore:
  Recombination dynamics of single quantum dots in a fiber system at telecommunication wavelengths. 722-724
• 
  Mark T. Greenaway, Alexander Gennadievich Balanov, Daivid R. Fowler, Anthony J. Kent, T. Mark Fromhold:
  Using sound to generate ultra-high-frequency electron dynamics in superlattices. 725-727
• 
  E. I. Rogacheva, S. G. Lyubchenko, O. N. Nashchekina, A. V. Meriuts, Mildred S. Dresselhaus:
  Quantum size effects and transport phenomena in thin Bi layers. 728-730
• 
  Samuel Mil'shtein, P. Kurlawala:
  Patterning 0.05 µm gate on pHEMT. 731-732
• 
  T. Clément, David Ferrand, L. Besombes, H. Boukari, H. Mariette:
  Dynamic equilibrium of magnetic ions in Cd(Mn)Te quantum dots. 733-735
• 
  Yoshimasa Sugimoto, Naoki Ikeda, Nobuhiko Ozaki, Yoshinori Watanabe, Shunsuke Ohkouchi, T. Kuroda, T. Mano, Tetsuyuki Ochiai, K. Kuroda, N. Koguchi, K. Sakoda, Kiyoshi Asakawa:
  Advanced quantum dot and photonic crystal technologies for integrated nanophotonic circuits. 736-740
• 
  Ke Liu, Raphael Tsu:
  Photoluminescence enhancement of quantum dots with photonic structures. 741-743
• 
  Danilo R. Huanca, Daniel S. Raimundo, Walter J. Salcedo:
  Backside contact effect on the morphological and optical features of porous silicon photonic crystals. 744-748
• 
  Mahi R. Singh:
  Photonic transistors made from metallic photonic quantum wires. 749-752
• 
  A. F. Slachmuylders, Bart Partoens, Wim Magnus, François M. Peeters:
  Neutral shallow donors near a metallic interface. 753-755
• 
  Marc Bescond, M. Lannoo, F. Michelini, Laurent Raymond, Marco G. Pala:
  3D real-space quantum transport simulation of nanowire MOS transistors: Influence of the ionized doping impurity. 756-758
• 
  Robby Peibst, T. Dürkop, Eberhard Bugiel, Namil Koo, Thomas Mollenhauer, Max Christian Lemme, Heinrich Kurz, Karl R. Hofmann:
  PECVD grown Ge nanocrystals embedded in SiO₂: From disordered to templated self-organization. 759-761
• 
  E. L. de Oliveira, Eudenílson L. Albuquerque, J. S. de Sousa, G. A. Farias:
  Excitonic properties of ordered and disordered SiGe nanocrystals. 762-765
• 
  N. P. Stepina, E. S. Koptev, A. V. Dvurechenskii, A. I. Nikiforov:
  The transition from strong to weak localization in two-dimensional array of Ge/Si quantum dots. 766-768
• 
  Byung-Gook Park, Jae Young Song, Jong Pil Kim, Hoon Jeong, Jung Hoon Lee, Seongjae Cho:
  Nanosculpture: Three-dimensional CMOS device structures for the ULSI era. 769-772
• 
  H. Hao, Xingqiang Shi, Zhi Zeng:
  Theoretical demonstration of symmetric I-V curves in asymmetric molecular junction of monothiolate alkane. 773-775
• 
  M. Rosenau da Costa, O. V. Kibis, M. E. Portnoi:
  Carbon nanotubes as a basis for terahertz emitters and detectors. 776-778
• 
  Pedro Pereyra, V. G. Ibarra-Sierra, J. L. Cardoso:
  Space-time evolution of spin-wave packets. 779-781
• 
  A. I. Nikiforov, V. V. Ulyanov, V. A. Timofeev, O. P. Pchelyakov:
  Wetting layer formation in superlattices with Ge quantum dots on Si(1 0 0). 782-784
• 
  A. I. Yakimov, A. A. Bloshkin, A. I. Nikiforov, A. V. Dvurechenskii:
  Hole states in vertically coupled double Ge/Si quantum dots. 785-787
• 
  Arturo Robledo-Martinez, Juan Carlos Sandoval, Pedro Pereyra:
  Novel properties of light transmission in multilayer stacks of air/silver thin films. 788-790
• 
  Tim LaFave, Raphael Tsu:
  The value of monophasic capacitance of few-electron systems. 791-795
• 
  Álvaro Miranda, J. L. Cuevas, A. E. Ramos, Miguel Cruz-Irisson:
  Quantum confinement effects on electronic properties of hydrogenated 3C-SiC nanowires. 796-798
• 
  P. C. M. Machado, F. A. P. Osório, A. N. Borges:
  Quasi-one-dimensional polaron gas in a GaAs quantum wire. 799-801
• 
  Mahi R. Singh:
  The dipole-dipole interaction in photonic quantum wires. 802-804
• 
  R. Kudrawiec, M. Gladysiewicz, J. Misiewicz, G. Cywinski, Marcin Siekacz, Czeslaw Skierbiszewski:
  Electromodulation spectroscopy of the ground and excited state transitions in GaInN/AlInN multi-quantum wells. 805-808
• 
  Wen Xu, Z. Zeng, Anthony R. Wright, Chao Zhang, J. Zhang, T. C. Lu:
  Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems. 809-811
• 
  L. L. Li, Wen Xu, Z. Zeng, Anthony R. Wright, Chao Zhang, J. Zhang, Y. L. Shi, T. C. Lu:
  Terahertz band-gap in InAs/GaSb type-II superlattices. 812-814
• 
  L. L. Li, Wen Xu, Z. Zeng, Anthony R. Wright, Chao Zhang, J. Zhang, Y. L. Shi:
  Mid-infrared absorption by short-period InAs/GaSb type II superlattices. 815-817
• 
  Naoki Ohtani, S. Noma, Kouichi Akahane, M. Hosoda, K. Fujita:
  Experimental study on the condition of the formation of electric field domains in multiple finite-superlattices. 818-820
• 
  E. I. Rogacheva, S. G. Lyubchenko, A. A. Drozdova:
  Effect of magnetic field on galvanomagnetic properties of mica/Bi/EuS heterostructures. 821-823
• 
  Masato Ishikawa, Takashi Nakayama:
  First-principles study of band-gap reduction in GaN/GaSb superlattices. 824-826
• 
  Hélène Carrère, V. G. Truong, Xavier Marie, T. Amand, Bernhard Urbaszek, Romain Brenot, Francois Lelarge, B. Rousseau:
  Strained InGaAsP multi-quantum-well structures for InP-based wide linewidth and polarization-insensitive semiconductor optical amplifiers. 827-829
• 
  Nebojsa Romcevic, Maja Romcevic, R. Kostic, D. Stojanovic, G. Karczewski, R. Galazka:
  Raman spectra of CdTe/ZnTe self-assembled quantum dots. 830-831
• 
  Y. H. Zhou, Zhi Zeng, X. Ju:
  The structural and electronic properties of Cu_mAg_n (m+n=6) clusters. 832-834
• 
  Angela S. Camacho, J. F. Nossa:
  Geometric dependence of the dielectric properties of quantum dots arrays. 835-837
• 
  F. A. M. Marques, A. F. G. Monte, Mark Hopkinson:
  Electric field effects on the carrier migration in self-assembled InAs/GaAs quantum dots. 838-840
• 
  Mauro F. Pereira:
  The influence of dephasing in the coupling of light with intersubband transitions. 841-843
• 
  Daniel S. Raimundo, Priscila B. Calíope, Danilo R. Huanca, Walter J. Salcedo:
  Anodic porous alumina structural characteristics study based on SEM image processing and analysis. 844-847
• 
  P. W. Mauriz, M. S. Vasconcelos, F. F. de Medeiros, Eudenílson L. Albuquerque:
  Thermal radiation in quasiperiodic photonic crystals. 848-850
• 
  M. S. Vasconcelos, P. W. Mauriz, Eudenílson L. Albuquerque:
  Optical filters based in quasiperiodic photonic crystal. 851-853
• 
  Mahi R. Singh, A. Hatef:
  Quantum interference due to the spontaneous emission in nonlinear metallic photonic crystals. 854-856
• 
  Anthony R. Wright, G. X. Wang, Wen Xu, Z. Zeng, Chao Zhang:
  The spin-orbit interaction enhanced terahertz absorption in graphene around the K point. 857-859
• 
  Ortwin Leenaerts, Bart Partoens, François M. Peeters:
  Adsorption of small molecules on graphene. 860-862
• 
  M. Y. Ni, Zhi Zeng, X. Ju:
  First-principles study of metal atom adsorption on the boron-doped carbon nanotubes. 863-866
• 
  Naoki Ohtani, Masaya Murata, Takafumi Yamamoto:
  Observation and numerical analysis of quantum subband energies from photoluminescence spectra of organic multiple-quantum wells. 867-868
• 
  Tim Schmielau, Mauro F. Pereira:
  Momentum dependent scattering matrix elements in quantum cascade laser transport. 869-871
• 
  M. Gunes, N. Balkan, D. Zanato, William J. Schaff:
  A comparative study of electrical and optical properties of InN and In_0.48Ga_0.52N. 872-874
• 
  Samuel Mil'shtein, A. Churi:
  Variable quantum well along p-HEMT channel. 875-876
• 
  Vivian M. de Menezes, Solange Binotto Fagan, Ivana Zanella, R. Mota:
  Carbon nanotubes interacting with vitamins: First principles calculations. 877-879

Volume 40, Number 6, June 2009

• 
  Ke Zhang, Shiwei Cheng, Xiaofang Zhou, Wenhong Li, Ran Liu:
  A wide band differentially switch-tuned CMOS monolithic quadrature VCO with a low Kvco and high linearity. 881-886
• 
  Antonella Arena, Nicola Donato, Gaetano Saitta:
  Capacitive humidity sensors based on MWCNTs/polyelectrolyte interfaces deposited on flexible substrates. 887-890
• 
  D. Chalabi, Abdelkader Saïdane, M. Idrissi-Benzohra, M. Benzohra:
  Thermal behavior Spice study of 6H-SiC NMOS transistors. 891-896
• 
  Athanasios Tsitouras, Fotis Plessas:
  Ultra wideband, low-power, 3-5.6 GHz, CMOS voltage-controlled oscillator. 897-904
• 
  Wen Ding, Gaofeng Wang:
  Analytical timing model for inductance-dominant interconnect based on traveling wave propagation. 905-911
• 
  Cheng Luo, Anirban Chakraborty:
  Effects of dimensions on the sensitivity of a conducting polymer microwire sensor. 912-920
• 
  Remzi Arslanalp, Erkan Yüce:
  A BJT technology-based current-mode tunable all-pass filter. 921-927
• 
  Erkan Yüce, Shahram Minaei:
  Novel floating simulated inductors with wider operating-frequency ranges. 928-938
• 
  Haisong Li, Qinsong Qian, Hong Wu, Weifeng Sun, Longxing Shi:
  Low cost bulk-silicon CDMOS technology and enhanced dv/dt high voltage driver circuit for PDP data driver IC. 939-943
• 
  Yeonbae Chung, Seung-Ho Song:
  Implementation of low-voltage static RAM with enhanced data stability and circuit speed. 944-951
• 
  Dennis Andrade, Ferran Martorell, Antonio Calomarde, Francesc Moll, Antonio Rubio:
  A new compensation mechanism for environmental parameter fluctuations in CMOS digital ICs. 952-957
• 
  Maria Drakaki, Alkis A. Hatzopoulos, Stylianos Siskos:
  De-embedding method for on-wafer RF CMOS inductor measurements. 958-965
• 
  Shih-Chang Hsia, Kuan-Ting Lin:
  High-performance active polyphase filter design for digital TV tuner. 966-972
• 
  Armin Tajalli, Elizabeth J. Brauer, Yusuf Leblebici:
  Ultra-low power 32-bit pipelined adder using subthreshold source-coupled logic with 5 fJ/stage PDP. 973-978
• 
  Abdul Kadir Kureshi, Mohd. Hasan:
  Performance comparison of CNFET- and CMOS-based 6T SRAM cell in deep submicron. 979-982
• 
  Ahmet Kemal Bakkaloglu, Arzu Ergintav, Emre Ozeren, Ibrahim Tekin, Yasar Gurbuz:
  Design of a tunable multi-band differential LC VCO using 0.35 µm SiGe BiCMOS technology for multi-standard wireless communication systems. 983-990
• 
  Chiheb Rebai, Manel Ben-Romdhane, Patricia Desgreys, Patrick Loumeau, Adel Ghazel:
  Pseudorandom signal sampler for relaxed design of multistandard radio receiver. 991-999
• 
  Selahattin Sayil, Abhishek B. Akkur, Nelson Gaspard III:
  Single Event crosstalk shielding for CMOS logic. 1000-1006
• 
  Yong-Seo Koo, Kwang-Yeob Lee, Kui-Dong Kim, Jong-Ki Kwon:
  Design of SCR-based ESD protection device for power clamp using deep-submicron CMOS technology. 1007-1012
• 
  Ranjith Kumar, Volkan Kursun:
  Temperature-adaptive voltage scaling for enhanced energy efficiency in subthreshold memory arrays. 1013-1025
• 
  Louis-François Tanguay, Mohamad Sawan, Yvon Savaria:
  A very-high output impedance charge pump for low-voltage low-power PLLs. 1026-1031
• 
  José M. Granado Criado, Miguel A. Vega-Rodríguez, Juan Manuel Sánchez-Pérez, Juan Antonio Gómez Pulido:
  IDEA and AES, two cryptographic algorithms implemented using partial and dynamic reconfiguration. 1032-1040

Volume 40, Number 7, July 2009

Special Issue: Mixed-Technology Testing

• 
  Marcelo Lubaszewski, Andrew Richardson, C. C. Su:
  Guest editorial. 1041
• 
  Péter G. Szabó, Balázs Németh, Márta Rencz:
  Thermal transient characterisation of the etching quality of micro electro mechanical systems. 1042-1047
• 
  Hans G. Kerkhoff, Xiao Zhang:
  Fault co-simulation for test evaluation of heterogeneous integrated biological systems. 1048-1053
• 
  Achraf Dhayni, Salvador Mir, Libor Rufer, Ahcène Bounceur, Emmanuel Simeu:
  Pseudorandom BIST for test and characterization of linear and nonlinear MEMS. 1054-1061
• 
  Rodrigo Possamai Bastos, Fernanda Lima Kastensmidt, Ricardo Reis:
  Design of a soft-error robust microprocessor. 1062-1068
• 
  Juha-Veikko Voutilainen, Jussi Putaala, Markku Moilanen, Heli Jantunen:
  A prognostic method for the embedded failure monitoring of solder interconnections with 1149.4 test bus architecture. 1069-1080

Special Issue: Rapid System Prototyping

• 
  Gabriela Nicolescu, Didier Buchs:
  Rapid systems prototyping at RSP'06. 1081
• 
  Sanggyu Park, Sang-yong Yoon, Soo-Ik Chae:
  A mixed-level virtual prototyping environment for SystemC-based design methodology. 1082-1093
• 
  Eftichios Koutroulis, Kostas Kalaitzakis, Vasileios Tzitzilonis:
  Development of an FPGA-based system for real-time simulation of photovoltaic modules. 1094-1102
• 
  Christoforos Kachris, Stephan Wong, Stamatis Vassiliadis:
  Design and performance evaluation of an adaptive FPGA for network applications. 1103-1110
• 
  Anupam Chattopadhyay, Arnab Sinha, Diandian Zhang, Rainer Leupers, Gerd Ascheid, Heinrich Meyr:
  Integrated verification approach during ADL-driven processor design. 1111-1123
• 
  Michel Metzger, Amine Anane, Frédéric Rousseau, Julie Vachon, El Mostapha Aboulhamid:
  Introspection mechanisms for runtime verification in a system-level design environment. 1124-1134

Original Articles

• 
  Marcin Janicki, Jedrzej Banaszczyk, Gilbert De Mey, Marek Kaminski, Bjorn Vermeersch, Andrzej Napieralski:
  Dynamic thermal modelling of a power integrated circuit with the application of structure functions. 1135-1140
• 
  Marius Marcu, Dacian Tudor, Horatiu Moldovan, Sebastian Fuicu, Mircea Popa:
  Energy characterization of mobile devices and applications using power-thermal benchmarks. 1141-1153
• 
  N. Spennagallo, Lorenzo Codecasa, Dario D'Amore, Paolo Maffezzoni:
  Evaluating the effects of temperature gradients and currents nonuniformity in on-chip interconnects. 1154-1159

Volume 40, Number 8, August 2009

• 
  Malek Gassoumi, Jean-Marie Bluet, Christophe Gaquière, Gérard Guillot, Hassen Maaref:
  Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. 1161-1165
• 
  Xiu-Xia Zhang, Chang-Chun Zhu:
  Electron translocation and field emission in printed CNT film by high-temperature sintering and post-treatment. 1166-1169
• 
  Henry M. D. Ip, Emmanuel M. Drakakis, Anil A. Bharath:
  A 19 nW analogue CMOS log-domain 6th-order Bessel filter without E-minus cells. 1170-1174
• 
  J. Gubelmann, Paulo Augusto Dal Fabbro, Marc Pastre, Maher Kayal:
  High-efficiency dynamic supply CMOS audio power amplifier for low-power applications. 1175-1183
• 
  Yu-Kang Lo, Hung-Chun Chien:
  Current-controllable monostable multivibrator with retriggerable function. 1184-1191
• 
  Zhi Juan Su, Gui Fu Ding, Wen Jing Lu, Weiqiang Chen:
  Broadband circularly polarized CPW-fed slot antenna array for millimeter wave application. 1192-1195
• 
  Kai Yang, Zhigang Li, Yupeng Jing, Dapeng Chen, Tianchun Ye:
  A simple prediction method for composite rectangular microcantilevers with equal width and the dimensional optimization. 1196-1201
• 
  Yan Huang, Emmanuel M. Drakakis, Patrick Degenaar, Chris Toumazou:
  A CMOS image sensor with light-controlled oscillating pixels for an investigative optobionic retinal prosthesis system. 1202-1211
• 
  Massoud Masoumi, Nasser Masoumi, Amir Javanpak:
  A new and efficient approach for estimating the accurate time-domain response of single and capacitive coupled distributed RC interconnects. 1212-1224
• 
  William Prodanov, Maurizio Valle:
  High abstraction level CAD tool implementation of MOS drain current models. 1225-1234
• 
  Ping Yang, Xiangnan Qin:
  A hybrid optimization approach for chip placement of multi-chip module packaging. 1235-1243
• 
  Wancheng Zhang, Nan-Jian Wu:
  Compact non-binary fast adders using single-electron devices. 1244-1254

Volume 40, Number 9, September 2009

Special Issue: Quality in Electronic Design

• 
  Daniela De Venuto:
  Guest editorial. 1255-1256
• 
  Amit Laknaur, Rui Xiao, Sai Raghuram Durbha, Haibo Wang:
  Design of a window comparator with adaptive error threshold for online testing applications. 1257-1263
• 
  Asha Balijepalli, Joseph Ervin, William Lepkowski, Yu Cao, Trevor J. Thornton:
  Compact modeling of a PD SOI MESFET for wide temperature designs. 1264-1273
• 
  Benoit Dubois, Jean-Baptiste Kammerer, Luc Hébrard, Francis Braun:
  Modelling of hot-carrier degradation and its application for analog design for reliability. 1274-1280
• 
  Juan Pablo Martinez Brito, Sergio Bampi:
  A DC offset and CMRR analysis in a CMOS 0.35 µm operational transconductance amplifier using Pelgrom's area/accuracy tradeoff. 1281-1292
• 
  Daniela De Venuto, Bruno Riccò:
  Fault diagnosis and test of DNA sensor arrays by using IFA approach. 1293-1299

Special Issue: 2nd IEEE International Workshop on Advances in Sensors and Interfaces

• 
  Paolo Bruschi, Massimo Piotto, N. Bacci:
  Postprocessing, readout and packaging methods for integrated gas flow sensors. 1300-1307
• 
  Ada Fort, C. Lotti, Marco Mugnaini, R. Palombari, Santina Rocchi, Valerio Vignoli:
  A two electrode C-NiO Nafion amperometric sensor for NO₂ detection. 1308-1312
• 
  Refet Firat Yazicioglu, Tom Torfs, Patrick Merken, Julien Penders, Vladimir Leonov, Robert Puers, Bert Gyselinckx, Chris Van Hoof:
  Ultra-low-power biopotential interfaces and their applications in wearable and implantable systems. 1313-1321
• 
  Alessandra Flammini, Paolo Ferrari, Daniele Marioli, Emiliano Sisinni, Andrea Taroni:
  Wired and wireless sensor networks for industrial applications. 1322-1336
• 
  Davide Brunelli, Denis Dondi, Alessandro Bertacchini, Luca Larcher, Paolo Pavan, Luca Benini:
  Photovoltaic scavenging systems: Modeling and optimization. 1337-1344
• 
  Massimo Lanzoni, Claudio Stagni, Bruno Riccò:
  Smart sensors for fast biological analysis. 1345-1349
• 
  Michael J. Ohletz, F. Schulze:
  Design, qualification and production of integrated sensor interface circuits for high-quality automotive applications. 1350-1357
• 
  Daniela De Venuto, Sandro Carrara, Bruno Riccò:
  Design of an integrated low-noise read-out system for DNA capacitive sensors. 1358-1365

Special Issue: Thermal Investigations of ICs and Systems

• 
  Márta Rencz:
  Thermal investigations of integrated circuits in systems at THERMINIC'07. 1366
• 
  Stéphane Grauby, Luis David Patiño Lopez, M. Amine Salhi, Etienne Puyoo, Jean-Michel Rampnoux, Wilfrid Claeys, Stefan Dilhaire:
  Joule expansion imaging techniques on microlectronic devices. 1367-1372
• 
  Kamil Pierscinski, Dorota Pierscinska, Maciej Bugajski:
  Quantification of thermoreflectance temperature measurements in high-power semiconductor devices - lasers and laser bars. 1373-1378
• 
  Brian Smith, Thomas Brunschwiler, Bruno Michel:
  Comparison of transient and static test methods for chip-to-sink thermal interface characterization. 1379-1386
• 
  Anastasios Petropoulos, Grigoris Kaltsas, Dimitrios Goustouridis:
  A novel system for displacement sensing, integrated on a plastic substrate. 1387-1392
• 
  Péter Csikvári, Péter Fürjes, Csaba Dücso, István Bársony:
  Micro-hotplates for thermal characterisation of structural materials of MEMS. 1393-1397
• 
  Daniel Mitrani, Jordi Salazar, Antoni Turó, Miguel Jesus García, Juan Antonio Chávez:
  One-dimensional modeling of TE devices considering temperature-dependent parameters using SPICE. 1398-1405
• 
  Daniel Mitrani, Jordi Salazar, Antoni Turó, Miguel Jesus García, Juan Antonio Chávez:
  Transient distributed parameter electrical analogous model of TE devices. 1406-1410
• 
  Bjorn Vermeersch, Gilbert De Mey:
  Dynamic electrothermal simulation of integrated resistors at device level. 1411-1416

Volume 40, Number 10, October 2009

• 
  D. Meganathan, Amrith Sukumaran, M. M. Dinesh Babu, S. Moorthi, R. Deepalakshmi:
  A systematic design approach for low-power 10-bit 100 MS/s pipelined ADC. 1417-1435
• 
  Bo-Yuan Ye, Po-Yu Yeh, Sy-Yen Kuo, Ing-Yi Chen:
  Design-for-testability techniques for CORDIC design. 1436-1440
• 
  Keivan Navi, Vahid Foroutan, Mostafa Rahimi Azghadi, Mehrdad Maeen, Maryam Ebrahimpour, M. Kaveh, Omid Kavehei:
  A novel low-power full-adder cell with new technique in designing logical gates based on static CMOS inverter. 1441-1448
• 
  Lei Zhang, Tadeusz Kwasniewski:
  FIR filter optimization using bit-edge equalization in high-speed backplane data transmission. 1449-1457
• 
  Yan Huang, Emmanuel M. Drakakis, Chris Toumazou:
  A 30 pA/V-25µA/V linear CMOS channel-length-modulation OTA. 1458-1465
• 
  Ricardo C. Goncalves da Silva, Cristiano Lazzari, Henri Boudinov, Luigi Carro:
  CMOS voltage-mode quaternary look-up tables for multi-valued FPGAs. 1466-1470
• 
  Saeid Gorgin, Ghassem Jaberipur:
  A fully redundant decimal adder and its application in parallel decimal multipliers. 1471-1481
• 
  Shiyan Hu, Jiang Hu:
  A fast general slew constrained minimum cost buffering algorithm. 1482-1486
• 
  Mohammad Moghaddam Tabrizi, Nasser Masoumi:
  Low-power and high-performance techniques in global interconnect signaling. 1487-1495
• 
  Yong Chen, Fei Yuan, Gul N. Khan:
  A wide dynamic range CMOS image sensor with pulse-frequency-modulation and in-pixel amplification. 1496-1501

Volume 40, Number 11, November 2009

Special Issue: International Conference on Microelectronics

• 
  Mohab Anis, Emad Hegazi:
  Introduction to the special issue on the 2007 International Conference on Microelectronics. 1503
• 
  Ahmed Ashry, Khaled Sharaf, Magdi Ibrahim:
  A compact low-power UHF RFID tag. 1504-1513
• 
  David C. W. Ng, David K. K. Kwong, Ngai Wong:
  A 30µW CMOS bandgap reference featuring a 1.5-6 mA output driving current and a Miller-effect startup circuit. 1514-1522
• 
  DiaaEldin Khalil, Muhammad M. Khellah, Nam-Sung Kim, Yehea I. Ismail, Tanay Karnik, Vivek De:
  SRAM dynamic stability estimation using MPFP and its applications. 1523-1530
• 
  Sherif A. Tawfik, Volkan Kursun:
  FinFET domino logic with independent gate keepers. 1531-1540
• 
  Bassel Hanafi, Emad Hegazi:
  A technique for truly linear LC VCO tuning, a proof of concept. 1541-1546
• 
  Saeid Hashemi, Mohamad Sawan, Yvon Savaria:
  A novel low-drop CMOS active rectifier for RF-powered devices: Experimental results. 1547-1554
• 
  Jong Cheol Park, Jae Yeong Park:
  Wideband LC balun transformer using coupled LC resonators embedded into organic substrate. 1555-1560
• 
  Amr Amin Hafez, Mohamed Dessouky, Hani F. Ragai:
  Design of a low-power ZigBee receiver front-end for wireless sensors. 1561-1568

Special Issue: Digital and Mixed-Signal Circuits and Systems

• 
  Mohamad Sawan, Mounir Boukadoum:
  Introduction to the Special issue on Digital and Mixed-Signal Circuits and Systems. 1569-1570
• 
  José C. García, Juan A. Montiel-Nelson, Saeid Nooshabadi:
  CMOS design and analysis of low-voltage signaling methodology for energy efficient on-chip interconnects. 1571-1581
• 
  Hau T. Ngo, Vijayan K. Asari:
  Partitioning and gating technique for low-power multiplication in video processing applications. 1582-1589
• 
  Michael A. Turi, José G. Delgado-Frias:
  Decreasing energy consumption in address decoders by means of selective precharge schemes. 1590-1600
• 
  Taek-Jun Kwon, Jeffrey T. Draper:
  Floating-point division and square root using a Taylor-series expansion algorithm. 1601-1605
• 
  Bijoy Antony Jose, Damu Radhakrishnan:
  Redundant binary partial product generators for compact accumulation in Booth multipliers. 1606-1612
• 
  Holger Eisenreich, Christian Mayr, Stephan Henker, Michael Wickert, René Schüffny:
  A novel ADPLL design using successive approximation frequency control. 1613-1622
• 
  An Hu, Fei Yuan:
  Parallel links with current-mode incremental signaling and per-pin skew compensation. 1623-1631
• 
  Chao Wu, Wei-Ping Zhu, M. N. S. Swamy:
  Generalized polyphase structure-based Mth-band filter design and application to image interpolation. 1632-1641
• 
  Stefan Eberli, Andreas Burg, Wolfgang Fichtner:
  Implementation of a 2×2 MIMO-OFDM receiver on an application specific processor. 1642-1649
• 
  Jean-Luc Danger, Sylvain Guilley, Philippe Hoogvorst:
  High speed true random number generator based on open loop structures in FPGAs. 1650-1656
• 
  René Gagné, Jean Belzile, Claude Thibeault:
  From synchronous to GALS: A new architecture for FPGAs. 1657-1666
• 
  Christian Fobel, Gary Gréwal, Andrew Morton:
  Hardware accelerated FPGA placement. 1667-1671

Volume 40, Number 12, December 2009

• 
  Antonio Petraglia, Fernando Antonio Pinto Barúqui, Jacqueline S. Pereira:
  Switched-capacitor decimation filter design using time-multiplexing and polyphase decomposition of transfer functions with low denominator orders. 1673-1680
• 
  Wei Zhang, Changxin Chen, Yafei Zhang:
  Modeling of carbon nanotube field-effect transistor with nanowelding treatment. 1681-1685
• 
  Houssein Jaber, Fabrice Monteiro, Stanislaw J. Piestrak, Abbas Dandache:
  Design of parallel fault-secure encoders for systematic cyclic block transmission codes. 1686-1697
• 
  Chien-Cheng Wei, Hsien-Chin Chiu, Yi-Tzu Yang, Jeffrey S. Fu:
  A novel complementary Colpitts differential CMOS VCO with low phase noise performance. 1698-1704
• 
  Roberto Perez-Andrade, René Cumplido, Claudia Feregrino Uribe, Fernando Martin del Campo:
  A versatile linear insertion sorter based on an FIFO scheme. 1705-1713
• 
  M. C. Tu, Y. C. Wang, Herng Yih Ueng:
  Linearity optimizing on HBT power amplifier design. 1714-1718
• 
  Erkan Yüce:
  Current-mode electronically tunable biquadratic filters consisting of only CCCIIs and grounded capacitors. 1719-1725
• 
  Benjamin Nicolle, Rami Khouri, Fabien Ferrero, William Tatinian, Lorenzo Carpineto, Gilles Jacquemod:
  On the use of behavioral modeling within the RFIC design flow: Satellite receiver case study. 1726-1735
• 
  Luis Quintanilla, Jesús Arias Álvarez, Jokin Segundo, Lourdes Enríquez, Jesús Manuel Hernández-Mangas, José Vicente:
  A comprehensive analysis of the effect of finite amplifier bandwidth and excess loop delay in continuous-time sigma-delta modulators. 1736-1745
• 
  João Paulo Carmo, José Higino Correia:
  Low-power/low-voltage RF microsystems for wireless sensors networks. 1746-1754
• 
  Elodie Ebrard, Bruno Allard, Philippe Candelier, Patrice Waltz:
  Review of fuse and antifuse solutions for advanced standard CMOS technologies. 1755-1765
• 
  Deyuan Xiao, Xi Wang, Yuehui Yu, Jing Chen, Miao Zhang, Zhongying Xue, Jiexin Luo:
  TCAD study on gate-all-around cylindrical (GAAC) transistor for CMOS scaling to the end of the roadmap. 1766-1771
• 
  José A. Siqueira Dias, Welligton A. do Amaral, Wilmar B. de Moraes:
  A curvature-compensated CMOS voltage reference using V²_th characteristics. 1772-1778
• 
  Emanuele Bottino, Paolo Massobrio, Sergio Martinoia, Giacomo Pruzzo, Maurizio Valle:
  Low-noise low-power CMOS preamplifier for multisite extracellular neuronal recordings. 1779-1787
• 
  Ali Alaeldine, Richard Perdriau, Ali Haidar:
  A comprehensive simulation model for immunity prediction in integrated circuits with respect to substrate injection. 1788-1795