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ORCIDA. Souifi
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2020 – today
- 2022
[c6]Camille Laguna
, Mathieu Bernard, Julien Garrione, Niccolo Castellani, Valentina Meli, S. Martin, François Aussenac, D. Rouchon, N. Rochat, Emmanuel Nolot, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, François Andrieu, Gabriele Navarro:
Multilayer Structure in SeAsGeSi-based OTS for High Thermal Stability and Reliability Enhancement. ESSDERC 2022: 225-228- 2021
- [c5]Camille Laguna, Mathieu Bernard, Nicolas Bernier, D. Rouchon, N. Rochat, Julien Garrione, A. Jannaud, Emmanuel Nolot, Valentina Meli, Niccolo Castellani, C. Sabbione, Guillaume Bourgeois, Marie Claire Cyrille, Liviu Militaru, A. Souifi, Gabriele Navarro, Etienne Nowak:
Multilayer OTS Selectors Engineering for High Temperature Stability, Scalability and High Endurance. IMW 2021: 1-4
2010 – 2019
- 2017
- [j10]Slah Hlali, Neila Hizem, Liviu Militaru, A. Kalboussi, Abdelkader Souifi:
Effect of interface traps for ultra-thin high-k gate dielectric based MIS devices on the capacitance-voltage characteristics. Microelectron. Reliab. 75: 154-161 (2017) - [j9]S. Chatbouri, M. Troudi, A. Kalboussi, A. Souifi:
Interface traps effect on the charge transport mechanisms in metal oxide semiconductor structures based on silicon nanocrystals. Microelectron. Reliab. 78: 227-232 (2017) - [c4]Getenet Tesega Ayele, Stéphane Monfray, Frédéric Boeuf, Jean-Pierre Cloarec, Serge Ecoffey, Dominique Drouin, Etienne Puyoo, Abdelkader Souifi:
Development of ultrasensitive extended-gate Ion-sensitive-field-effect-transistor based on industrial UTBB FDSOI transistor. ESSDERC 2017: 264-267 - 2015
- [j8]N. Abdelwahed, M. Troudi, Nabil Sghaier, Abdelkader Souifi:
Impact of defect on I(V) instabilities observed on Ti/4H-SiC high voltage Schottky diodes. Microelectron. Reliab. 55(8): 1169-1173 (2015) - [c3]Dominique Drouin, Mohamed Amine-Bounouar, Gabriel Droulers, M. Labalette, Michel Pioro-Ladriere, A. Souifi, Serge Ecoffey:
3D microelectronic with BEOL compatible devices. VTS 2015: 1 - 2013
- [c2]S. Chatbouri, M. Troudi, Nabil Sghaier, A. Kalboussi, Dominique Drouin, V. Aimez, A. Souifi:
Effect of illumination on the electron transport mechanisms in Silicon nanocrystal-based nanopixels. SSD 2013: 1-4
2000 – 2009
- 2009
- [j7]Aimen Boubaker, M. Troudi, Nabil Sghaier, A. Souifi, Nicolas Baboux, A. Kalboussi:
Electrical characteristics and modelling of multi-island single-electron transistor using SIMON simulator. Microelectron. J. 40(3): 543-546 (2009) - [c1]Wei Xuan, Françis Calmon, Nicolas Baboux, Abdelkader Souifi:
Discussion on the performances of hybrid SET-MOSFET Voltage Controlled Oscillators. ICECS 2009: 479-482 - 2007
- [j6]Neila Hizem, A. Kalboussi, R. Adhiri, A. Souifi:
Blue/green luminescence based on Zn(S)Se/GaAs heterostructures. Microelectron. J. 38(4-5): 496-500 (2007) - [j5]Aimen Boubaker, Nabil Sghaier, M. Troudi, A. Kalboussi, Nicolas Baboux, A. Souifi:
A new SIMPLORER model for single-electron transistors. Microelectron. J. 38(8-9): 894-899 (2007) - [j4]M. Troudi, Nabil Sghaier, Aimen Boubaker, A. Souifi, A. Kalboussi:
Macro-modeling for the compact simulation of single electron transistor using SIMPLORER. Microelectron. J. 38(12): 1156-1160 (2007) - 2006
- [j3]Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger:
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectron. J. 37(4): 363-370 (2006) - [j2]Nabil Sghaier, M'Hamed Trabelsi, Ne. Sghaier, Liviu Militaru, Abdelkader Souifi, Adel Kalboussi, Noureddine Yacoubi:
Static and low-frequency noise characterization in submicron MOSFETs for memories cells applications. Microelectron. J. 37(11): 1399-1403 (2006) - 2001
- [j1]Liviu Militaru, A. Souifi, M. Mouis, Alain Chantre, G. Brémond:
Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. Microelectron. Reliab. 41(2): 253-263 (2001)
Coauthor Index
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