"Investigation of deep traps in silicon-germanium epitaxial base bipolar ..."

Liviu Militaru et al. (2001)

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DOI: 10.1016/S0026-2714(00)00097-4

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type: Journal Article

metadata version: 2020-02-22

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Liviu Militaru, A. Souifi, M. Mouis, Alain Chantre, G. Brémond:
Investigation of deep traps in silicon-germanium epitaxial base bipolar transistors with a single polysilicon quasi self-aligned architecture. Microelectron. Reliab. 41(2): 253-263 (2001)

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