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ORCIDMohamed Missous
Person information
- affiliation: University of Mancheste, Microelectronics and Nanostructures Group, School of Electrical and Electronic Engineering, UK
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Journal Articles
- 2023
[j7]Firew Abera Biruu
, Pierfranco Reccagni, Dirk Engelberg, Mohamed Missous:
A Novel Method for Detecting the Onset and Location of Mechanical Failure by Correlating Engineering Stress With Changes in Magnetic Properties of UNS S32205 Duplex Stainless Steel Using Quantum Well Hall Effect Sensors. IEEE Access 11: 78613-78622 (2023)- [j6]Christopher Walsh, Saad G. Muttlak, Mohammadreza Sadeghi, Mohamed Missous:
Miniature Integrated 2.4 GHz Rectennas Using Novel Tunnel Diodes. Sensors 23(14): 6409 (2023) - 2022
- [j5]Fatih Atalar, Emrah Dokur, Ertan Balaban, Mohamed Missous, Mukden Ugur:
Partial Discharge Detection in Pressboards Immersed in Mineral Insulation Oil With Quantum Well Hall Effect Magnetic Field Sensors. IEEE Access 10: 70362-70369 (2022) - 2009
- [j4]Mohammad Abdulaziz Alduraibi, C. Mitchell, S. Chakraborty, Mohamed Missous:
Surfactant-mediated growth of InAs-GaAs superlattices and quantum dot structures grown at different temperatures. Microelectron. J. 40(3): 476-478 (2009) - [j3]R. J. Kashtiban, Ursel Bangert, Mohamed Missous:
Investigation of the effect of growth interruption on the formation of InAs/GaAs quantum dot superlattice near the InAs critical thickness. Microelectron. J. 40(3): 479-482 (2009) - [j2]Mohammad Abdulaziz Alduraibi, C. Mitchell, S. Chakraborty, Mohamed Missous:
Interaction of low-temperature surfactant-grown InAs superlattice layers with arsenic precipitates. Microelectron. J. 40(3): 550-553 (2009) - 2006
- [j1]J. Ng, Mohamed Missous:
Improvements of stacked self-assembled InAs/GaAs quantum dot structures for 1.3mum applications. Microelectron. J. 37(12): 1446-1450 (2006)
Conference and Workshop Papers
- 2013
- [c1]Edson Garduño-Nolasco, Mohamed Missous:
Silicon Nitride anti-reflective coating for intermediate band InAs/GaAs PV devices. CCE 2013: 380-385
Coauthor Index
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