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ORCIDGerhard K. M. Wachutka
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2020 – today
- 2023
[j12]Hesham Okeil
, Gabriele Schrag, Gerhard K. M. Wachutka:
High-Throughput Apparatus for Semiconductor Device Characterization in a Magnetic Field at Extreme High Temperatures. IEEE Trans. Instrum. Meas. 72: 1-8 (2023)
2010 – 2019
- 2017
- [j11]Dennis Helmut, Gerhard K. M. Wachutka, Gerhard Groos:
Transient analysis of latent damage formation in SMD capacitors by Transmission Line Pulsing (TLP). Microelectron. Reliab. 76-77: 97-101 (2017) - 2013
- [j10]Stefan Müller, Thomas Zahner, Frank Singer, Gabriele Schrag, Gerhard K. M. Wachutka:
Evaluation of thermal transient characterization methodologies for high-power LED applications. Microelectron. J. 44(11): 1005-1010 (2013) - [c2]Gerhard K. M. Wachutka:
The art of modeling and predictive simulation in power electronics and microsystems. MIXDES 2013: 48-52
2000 – 2009
- 2009
- [j9]Y. C. Gerstenmaier, W. Kiffe, Gerhard K. M. Wachutka:
Combination of thermal subsystems by use of rapid circuit transformation and extended two-port theory. Microelectron. J. 40(1): 26-34 (2009) - 2008
- [j8]Peter Borthen, Gerhard K. M. Wachutka:
Testing semiconductor devices at extremely high operating temperatures. Microelectron. Reliab. 48(8-9): 1440-1443 (2008) - [c1]Gerhard K. M. Wachutka:
Virtual Prototyping of Microdevices and Microsystems. DistIntellSys 2008: 155-162 - 2006
- [j7]Alberto Castellazzi, Martin Honsberg-Riedl, Gerhard K. M. Wachutka:
Thermal characterisation of power devices during transient operation. Microelectron. J. 37(2): 145-151 (2006) - 2004
- [j6]Gerald Sölkner, Winfried Kaindl, Hans-Joachim Schulze, Gerhard K. M. Wachutka:
Reliability of power electronic devices against cosmic radiation-induced failure. Microelectron. Reliab. 44(9-11): 1399-1406 (2004) - [j5]Robert K. Thalhammer, Gerhard K. M. Wachutka:
Physically rigorous modeling of internal laser-probing techniques for microstructured semiconductor devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 23(1): 60-70 (2004) - [j4]Robert K. Thalhammer, Gerhard K. M. Wachutka:
Corrections to "Physically Rigorous Modeling of Internal Laser-Probing Techniques for Microstructured Semiconductor Devices". IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 23(4): 581-582 (2004) - 2003
- [j3]A. Icaza Deckelmann, Gerhard K. M. Wachutka, Franz Hirler, J. Krumrey, R. Henninger:
Avalanche breakdown capability of Power DMOS Transistors and the Wunsch-Bell relation. Microelectron. Reliab. 43(9-11): 1895-1900 (2003)
1990 – 1999
- 1994
- [j2]Philip B. M. Wolbert, Gerhard K. M. Wachutka, Benno H. Krabbenborg, Ton J. Mouthaan:
Nonisothermal device simulation using the 2D numerical process/device simulator TRENDY and application to SOI-devices. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13(3): 293-302 (1994) - 1990
- [j1]Gerhard K. M. Wachutka:
Rigorous thermodynamic treatment of heat generation and conduction in semiconductor device modeling. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 9(11): 1141-1149 (1990)
Coauthor Index
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