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ORCIDAtsushi Kawasumi
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Journal Articles
- 2020
[j10]Atsushi Kawasumi, Mototsugu Hamada, Po-Hung Chen:
Introduction to the Special Section on the 2019 Asian Solid-State Circuits Conference (A-SSCC). IEEE J. Solid State Circuits 55(10): 2627-2628 (2020)- 2017
- [j9]Dennis Sylvester, Dejan Markovic, Roman Genov, Atsushi Kawasumi, Subhasish Mitra:
Introduction to the January Special Issue on the 2016 IEEE International Solid-State Circuits Conference. IEEE J. Solid State Circuits 52(1): 3-7 (2017) - 2014
- [j8]Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Miyako Shizuno, Atsushi Kawasumi, Keiichi Kushida, Azuma Suzuki, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa:
A 27% Active and 85% Standby Power Reduction in Dual-Power-Supply SRAM Using BL Power Calculator and Digitally Controllable Retention Circuit. IEEE J. Solid State Circuits 49(1): 118-126 (2014) - 2013
- [j7]Shinji Miyano, Shinichi Moriwaki, Yasue Yamamoto, Atsushi Kawasumi, Toshikazu Suzuki, Takayasu Sakurai, Hirofumi Shinohara:
Highly Energy-Efficient SRAM With Hierarchical Bit Line Charge-Sharing Method Using Non-Selected Bit Line Charges. IEEE J. Solid State Circuits 48(4): 924-931 (2013) - 2011
- [j6]Yusuke Niki, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yuki Fujimura, Tomoaki Yabe:
A Digitized Replica Bitline Delay Technique for Random-Variation-Tolerant Timing Generation of SRAM Sense Amplifiers. IEEE J. Solid State Circuits 46(11): 2545-2551 (2011) - [j5]Yu Pu, Xin Zhang, Katsuyuki Ikeuchi, Atsushi Muramatsu, Atsushi Kawasumi, Makoto Takamiya, Masahiro Nomura, Hirofumi Shinohara, Takayasu Sakurai:
Post-Silicon Clock Deskew Employing Hot-Carrier Injection Trimming With On-Chip Skew Monitoring and Auto-Stressing Scheme for Sub/Near Threshold Digital Circuits. IEEE Trans. Circuits Syst. II Express Briefs 58-II(5): 294-298 (2011) - 2010
- [j4]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Yuki Fujimura, Tomoaki Yabe:
A Low-Supply-Voltage-Operation SRAM With HCI Trimmed Sense Amplifiers. IEEE J. Solid State Circuits 45(11): 2341-2347 (2010) - 2009
- [j3]Keiichi Kushida, Azuma Suzuki, Gou Fukano, Atsushi Kawasumi, Osamu Hirabayashi, Yasuhisa Takeyama, Takahiko Sasaki, Akira Katayama, Yuki Fujimura, Tomoaki Yabe:
A 0.7 V Single-Supply SRAM With 0.495 µm2 Cell in 65 nm Technology Utilizing Self-Write-Back Sense Amplifier and Cascaded Bit Line Scheme. IEEE J. Solid State Circuits 44(4): 1192-1198 (2009) - 2007
- [j2]Brian K. Flachs, Shigehiro Asano, Sang H. Dhong, H. Peter Hofstee, Gilles Gervais, Roy Kim, Tien Le, Peichun Liu, Jens Leenstra, John S. Liberty, Brad W. Michael, Hwa-Joon Oh, Silvia M. Müller, Osamu Takahashi, Koji Hirairi, Atsushi Kawasumi, Hiroaki Murakami, Hiromi Noro, Shoji Onishi, Juergen Pille, Joel Silberman, Suksoon Yong, Akiyuki Hatakeyama, Yukio Watanabe, Naoka Yano, Daniel A. Brokenshire, Mohammad Peyravian, VanDung To, Eiji Iwata:
Microarchitecture and implementation of the synergistic processor in 65-nm and 90-nm SOI. IBM J. Res. Dev. 51(5): 529-544 (2007) - 2005
- [j1]Toru Asano, Joel Silberman, Sang H. Dhong, Osamu Takahashi, Michael White, Scott R. Cottier, Takaaki Nakazato, Atsushi Kawasumi, Hiroshi Yoshihara:
Low-Power Design Approach of 11FO4 256-Kbyte Embedded SRAM for the Synergistic Processor Element of a Cell Processor. IEEE Micro 25(5): 30-38 (2005)
Conference and Workshop Papers
- 2024
- [c20]Shinichi Sasaki, Yuta Aiba, Yusuke Komano, Takahiko Iizuka, Motohiko Fujimatsu, Atsushi Kawasumi, Daisuke Miyashita, Jun Deguchi, Takashi Maeda, Shinji Miyano, Tooru Maruyama:
Mitigation of Accuracy Degradation in 3D Flash Memory Based Approximate Nearest Neighbor Search with Binary Tree Balanced Soft Clustering for Retrieval-Augmented AI. NewCAS 2024: 238-242 - 2016
- [c19]Hiroki Noguchi, Kazutaka Ikegami, Satoshi Takaya, Eishi Arima, Keiichi Kushida, Atsushi Kawasumi, Hiroyuki Hara, Keiko Abe, Naoharu Shimomura, Junichi Ito, Shinobu Fujita, Takashi Nakada, Hiroshi Nakamura
:
7.2 4Mb STT-MRAM-based cache with memory-access-aware power optimization and write-verify-write / read-modify-write scheme. ISSCC 2016: 132-133 - [c18]Hugh Mair, Atsushi Kawasumi:
Session 17 overview: SRAM. ISSCC 2016: 304-305 - 2015
- [c17]Hiroki Noguchi, Kazutaka Ikegami, Keiichi Kushida, Keiko Abe, Shogo Itai, Satoshi Takaya, Naoharu Shimomura, Junichi Ito, Atsushi Kawasumi, Hiroyuki Hara, Shinobu Fujita:
7.5 A 3.3ns-access-time 71.2μW/MHz 1Mb embedded STT-MRAM using physically eliminated read-disturb scheme and normally-off memory architecture. ISSCC 2015: 1-3 - 2013
- [c16]Michael Clinton, Atsushi Kawasumi:
Session 18 overview: Advanced embedded SRAM. ISSCC 2013: 314-315 - [c15]Fumihiko Tachibana, Osamu Hirabayashi, Yasuhisa Takeyama, Miyako Shizuno, Atsushi Kawasumi, Keiichi Kushida, Azuma Suzuki, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe, Yasuo Unekawa:
A 27% active and 85% standby power reduction in dual-power-supply SRAM using BL power calculator and digitally controllable retention circuit. ISSCC 2013: 320-321 - 2012
- [c14]Yasue Yamamoto, Atsushi Kawasumi, Shinichi Moriwaki, Toshikazu Suzuki, Shinji Miyano, Hirofumi Shinohara:
60% Cycle time acceleration, 55% energy reduction, 32Kbit SRAM by auto-selective boost (ASB) scheme for slow memory cells in random variations. ESSCIRC 2012: 317-320 - [c13]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe:
Energy efficiency deterioration by variability in SRAM and circuit techniques for energy saving without voltage reduction. ICICDT 2012: 1-4 - [c12]Shusuke Yoshimoto, Masaharu Terada, Youhei Umeki, Shunsuke Okumura, Atsushi Kawasumi, Toshikazu Suzuki, Shinichi Moriwaki, Shinji Miyano, Hiroshi Kawaguchi, Masahiko Yoshimoto:
A 40-nm 256-Kb Sub-10 pJ/Access 8t SRAM with read bitline amplitude limiting (RBAL) scheme. ISLPED 2012: 85-90 - [c11]Shinichi Moriwaki, Yasuhiro Yamamoto, Atsushi Kawasumi, Toshikazu Suzuki, Shinji Miyano, Takayasu Sakurai, Hirofumi Shinohara:
A 13.8pJ/Access/Mbit SRAM with charge collector circuits for effective use of non-selected bit line charges. VLSIC 2012: 60-61 - [c10]Atsushi Kawasumi, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Fumihiko Tachibana, Yusuke Niki, Shinichi Sasaki, Tomoaki Yabe:
A 47% access time reduction with a worst-case timing-generation scheme utilizing a statistical method for ultra low voltage SRAMs. VLSIC 2012: 100-101 - 2011
- [c9]Keiichi Kushida, Osamu Hirabayashi, Fumihiko Tachibana, Hiroyuki Hara, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Yuki Fujimura, Yusuke Niki, Miyako Shizuno, Shinichi Sasaki, Tomoaki Yabe:
A trimless, 0.5V-1.0V wide voltage operation, high density SRAM macro utilizing dynamic cell stability monitor and multiple memory cell access. A-SSCC 2011: 161-164 - [c8]Atsushi Kawasumi, Toshikazu Suzuki, Shinichi Moriwaki, Shinji Miyano:
Energy efficiency degradation caused by random variation in low-voltage SRAM and 26% energy reduction by Bitline Amplitude Limiting (BAL) scheme. A-SSCC 2011: 165-168 - [c7]Shinichi Moriwaki, Atsushi Kawasumi, Toshikazu Suzuki, Takayasu Sakurai, Shinji Miyano:
0.4V SRAM with bit line swing suppression charge share hierarchical bit line scheme. CICC 2011: 1-4 - 2010
- [c6]Toshikazu Suzuki, Shinichi Moriwaki, Atsushi Kawasumi, Shinji Miyano, Hirofumi Shinohara:
0.5-V, 150-MHz, bulk-CMOS SRAM with suspended bit-line read scheme. ESSCIRC 2010: 354-357 - [c5]Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe:
A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm2 cell in 32nm high-k metal-gate CMOS. ISSCC 2010: 348-349 - 2009
- [c4]Osamu Hirabayashi, Atsushi Kawasumi, Azuma Suzuki, Yasuhisa Takeyama, Keiichi Kushida, Takahiko Sasaki, Akira Katayama, Gou Fukano, Yuki Fujimura, Takaaki Nakazato, Yasushi Shizuki, Natsuki Kushiyama, Tomoaki Yabe:
A process-variation-tolerant dual-power-supply SRAM with 0.179µm2 Cell in 40nm CMOS using level-programmable wordline driver. ISSCC 2009: 458-459 - 2008
- [c3]Atsushi Kawasumi, Tomoaki Yabe, Yasuhisa Takeyama, Osamu Hirabayashi, Keiichi Kushida, Akihito Tohata, Takahiko Sasaki, Akira Katayama, Gou Fukano, Yuki Fujimura, Nobuaki Otsuka:
A Single-Power-Supply 0.7V 1GHz 45nm SRAM with An Asymmetrical Unit-×-ratio Memory Cell. ISSCC 2008: 382-383 - 2005
- [c2]Osamu Takahashi, Russ Cook, Scott R. Cottier, Sang H. Dhong, Brian K. Flachs, Koji Hirairi, Atsushi Kawasumi, Hiroaki Murakami, Hiromi Noro, Hwa-Joon Oh, S. Onish, Juergen Pille, Joel Silberman:
The circuit design of the synergistic processor element of a CELL processor. ICCAD 2005: 111-117 - 2002
- [c1]Osamu Hirabayashi, Azuma Suzuki, Tomoaki Yabe, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Akihito Tohata, Nobuaki Otsuka:
DFT Techniques for Wafer-Level At-Speed Testing of High-Speed SRAMs. ITC 2002: 164-169
Coauthor Index
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