"A configurable SRAM with constant-negative-level write buffer for ..."

Yuki Fujimura et al. (2010)

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DOI: 10.1109/ISSCC.2010.5433813

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-17

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Yuki Fujimura, Osamu Hirabayashi, Takahiko Sasaki, Azuma Suzuki, Atsushi Kawasumi, Yasuhisa Takeyama, Keiichi Kushida, Gou Fukano, Akira Katayama, Yusuke Niki, Tomoaki Yabe:
A configurable SRAM with constant-negative-level write buffer for low-voltage operation with 0.149µm² cell in 32nm high-k metal-gate CMOS. ISSCC 2010: 348-349

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