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2020 – today
- 2024
[c50]J. A. Yang, Eros Reato, Theresia Knobloch, J.-S. Ko, Z. Zhang, Andrew J. Mannix, Krishna Saraswat, Tibor Grasser, Max Christian Lemme, Eric Pop:
Quantifying Defect-Mediated Electron Capture and Emission in Flexible Monolayer WS2 Field-Effect Transistors. DRC 2024: 1-2- [c49]Tibor Grasser, Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Dominic Waldhör, A. Vasilev, Michael Waltl, Thomas Aichinger, M. Bockstedte, Wolfgang Gustin, Gregor Pobegen:
A Recombination-Enhanced-Defect-Reaction-Based Model for the Gate Switching Instability in SiC MOSFETs. IRPS 2024: 3 - [c48]Margareta V. Stephanie, Lam Pham, Alexander Schindler, Michael Waltl, Tibor Grasser, Bernhard Schrenk:
Neural Network with Optical Frequency-Coded ReLU. OFC 2024: 1-3 - 2023
- [c47]Christian Bogner, Christian Schlünder, Michael Waltl, Hans Reisinger, Tibor Grasser:
Modeling of NBTI Induced Threshold Voltage Shift Based on Activation Energy Maps Under Consideration of Variability. IRPS 2023: 1-7 - [c46]Maximilian W. Feil
, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10 - 2022
- [c45]Christoph Wilhelmer, Dominic Waldhoer, Markus Jech, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Michael Waltl, Tibor Grasser:
Metastability of Negatively Charged Hydroxyl-E' Centers and their Potential Role in Positive Bias Temperature Instabilities. ESSDERC 2022: 376-379 - [c44]Dominic Waldhoer, Bibhas Manna, Al-Moatasem Bellah El-Sayed, Theresia Knobloch, Yury Illarionov, Tibor Grasser:
Silicon-Impurity Defects in Calcium Fluoride: A First Principles Study. ESSDERC 2022: 380-383 - [c43]Christian Bogner, Tibor Grasser, Michael Waltl, Hans Reisinger, Christian Schlünder:
Efficient Evaluation of the Time-Dependent Threshold Voltage Distribution Due to NBTI Stress Using Transistor Arrays. IRPS 2022: 1-8 - [c42]Theresia Knobloch, Yury Yu. Illarionov, Tibor Grasser:
Finding Suitable Gate Insulators for Reliable 2D FETs. IRPS 2022: 2 - [c41]Maximilian W. Feil, Hans Reisinger, André Kabakow, Thomas Aichinger, Wolfgang Gustin, Tibor Grasser:
Optical Emission Correlated to Bias Temperature Instability in SiC MOSFETs. IRPS 2022: 3 - [c40]Alexander Grill, V. John, Jakob Michl, A. Beckers, Erik Bury, Stanislav Tyaginov, Bertrand Parvais, Adrian Vaisman Chasin, Tibor Grasser, Michael Waltl, Ben Kaczer, Bogdan Govoreanu:
Temperature Dependent Mismatch and Variability in a Cryo-CMOS Array with 30k Transistors. IRPS 2022: 10 - [c39]Margareta V. Stephanie, Michael Waltl, Tibor Grasser, Bernhard Schrenk:
WDM-Conscious Synaptic Receptor Assisted by SOA+EAM. OFC 2022: 1-3 - 2021
- [c38]Lukas Cvitkovich, Markus Jech, Dominic Waldhör, Al-Moatasem El-Sayed, Christoph Wilhelmer, Tibor Grasser:
Multiscale Modeling Study of Native Oxide Growth on a Si(100) Surface. ESSDERC 2021: 235-238 - [c37]Diego Milardovich, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Tibor Grasser:
Machine Learning Prediction of Defect Structures in Amorphous Silicon Dioxide. ESSDERC 2021: 239-242 - [c36]Christoph Wilhelmer, Markus Jech, Dominic Waldhoer, Al-Moatasem Bellah El-Sayed, Lukas Cvitkovich, Tibor Grasser:
Statistical Ab Initio Analysis of Electron Trapping Oxide Defects in the Si/SiO2 Network. ESSDERC 2021: 243-246 - [c35]Jacopo Franco, Hiroaki Arimura, J.-F. de Marneffe, A. Vandooren, L.-Å. Ragnarsson, Zhicheng Wu, Dieter Claes, E. Dentoni Litta, N. Horiguchi, Kris Croes, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Novel low thermal budget gate stack solutions for BTI reliability in future Logic Device technologies : Invited paper. ICICDT 2021: 1-4 - [c34]Tibor Grasser, Barry J. O'Sullivan, Ben Kaczer, Jacopo Franco, Bernhard Stampfer, Michael Waltl:
CV Stretch-Out Correction after Bias Temperature Stress: Work-Function Dependence of Donor-/Acceptor-Like Traps, Fixed Charges, and Fast States. IRPS 2021: 1-6 - 2020
- [c33]Yury Yu. Illarionov, Alexander G. Banshchikov, Theresia Knobloch, Dmitry K. Polyushkin, Stefan Wachter, V. V. Fedorov, S. M. Suturin, M. Stöger-Pollach, Thomas Mueller, M. I. Vexler, Nikolai S. Sokolov, Tibor Grasser:
Crystalline Calcium Fluoride: A Record-Thin Insulator for Nanoscale 2D Electronics. DRC 2020: 1-2 - [c32]Judith Berens, Magdalena Weger, Gregor Pobegen, Thomas Aichinger, Gerald Rescher, Christian Schleich, Tibor Grasser:
Similarities and Differences of BTI in SiC and Si Power MOSFETs. IRPS 2020: 1-7 - [c31]Tibor Grasser, Ben Kaczer, Barry J. O'Sullivan, Gerhard Rzepa, Bernhard Stampfer, Michael Waltl:
The Mysterious Bipolar Bias Temperature Stress from the Perspective of Gate-Sided Hydrogen Release. IRPS 2020: 1-6 - [c30]Alexander Grill, Erik Bury, Jakob Michl, Stanislav Tyaginov, Dimitri Linten, Tibor Grasser, Bertrand Parvais, Ben Kaczer, Michael Waltl, Iuliana P. Radu:
Reliability and Variability of Advanced CMOS Devices at Cryogenic Temperatures. IRPS 2020: 1-6 - [c29]Anastasiia Kruv, Ben Kaczer, Alexander Grill, Mario Gonzalez, Jacopo Franco, Dimitri Linten, Wolfgang Goes, Tibor Grasser, Ingrid De Wolf:
On the impact of mechanical stress on gate oxide trapping. IRPS 2020: 1-5 - [c28]Jakob Michl, Alexander Grill, Dieter Claes, Gerhard Rzepa, Ben Kaczer, Dimitri Linten, Iuliana P. Radu, Tibor Grasser, Michael Waltl:
Quantum Mechanical Charge Trap Modeling to Explain BTI at Cryogenic Temperatures. IRPS 2020: 1-6 - [c27]Bernhard Ruch, Gregor Pobegen, Christian Schleich, Tibor Grasser:
Generation of Hot-Carrier Induced Border and Interface Traps, Investigated by Spectroscopic Charge Pumping. IRPS 2020: 1-6 - [c26]Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer:
A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS 2020: 1-7
2010 – 2019
- 2019
- [c25]Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser:
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC 2019: 262-265 - [c24]Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov:
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS 2019: 1-7 - [c23]Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi:
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS 2019: 1-8 - [c22]Zhicheng Wu, Jacopo Franco, Dieter Claes, Gerhard Rzepa, Philippe J. Roussel, Nadine Collaert, Guido Groeseneken, Dimitri Linten, Tibor Grasser, Ben Kaczer:
Accelerated Capture and Emission (ACE) Measurement Pattern for Efficient BTI Characterization and Modeling. IRPS 2019: 1-7 - 2018
- [j34]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Vamsi Putcha, Erik Bury, Marko Simicic, Adrian Vaisman Chasin, Dimitri Linten, Bertrand Parvais, Francky Catthoor, Gerhard Rzepa, Michael Waltl, Tibor Grasser:
A brief overview of gate oxide defect properties and their relation to MOSFET instabilities and device and circuit time-dependent variability. Microelectron. Reliab. 81: 186-194 (2018) - [j33]James H. Stathis, Souvik Mahapatra, Tibor Grasser:
Controversial issues in negative bias temperature instability. Microelectron. Reliab. 81: 244-251 (2018) - [j32]Gerhard Rzepa, Jacopo Franco, Barry J. O'Sullivan, A. Subirats, Marko Simicic, Geert Hellings, Pieter Weckx, Markus Jech, Theresia Knobloch, Michael Waltl, Philippe Roussel, Dimitri Linten, Ben Kaczer, Tibor Grasser:
Comphy - A compact-physics framework for unified modeling of BTI. Microelectron. Reliab. 85: 49-65 (2018) - [j31]Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Gerhard Rzepa, Markus Jech, Alexander L. Shluger, Tibor Grasser:
Identification of oxide defects in semiconductor devices: A systematic approach linking DFT to rate equations and experimental evidence. Microelectron. Reliab. 87: 286-320 (2018) - [c21]Yury Yu. Illarionov, Kirby K. H. Smithe, Michael Waltl, Ryan W. Grady, Sanchit Deshmukh, Eric Pop, Tibor Grasser:
Annealing and Encapsulation of CVD-MoS2 FETs with 1010On/Off Current Ratio. DRC 2018: 1-2 - [c20]Katja Puschkarsky, Hans Reisinger, Christian Schlünder, Wolfgang Gustin, Tibor Grasser:
Fast acquisition of activation energy maps using temperature ramps for lifetime modeling of BTI. ESSDERC 2018: 218-221 - [c19]Tibor Grasser, Bernhard Stampfer, Michael Waltl, Gerhard Rzepa, Karl Rupp, Franz Schanovsky, Gregor Pobegen, Katja Puschkarsky, Hans Reisinger, Barry J. O'Sullivan, Ben Kaczer:
Characterization and physical modeling of the temporal evolution of near-interfacial states resulting from NBTI/PBTI stress in nMOS/pMOS transistors. IRPS 2018: 2 - [c18]Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger:
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS 2018: 3 - [c17]Yury Yu. Illarionov, Aday J. Molina-Mendoza, Michael Waltl, Theresia Knobloch, Marco M. Furchi, Thomas Mueller, Tibor Grasser:
Reliability of next-generation field-effect transistors with transition metal dichalcogenides. IRPS 2018: 5 - 2017
- [j30]Bianka Ullmann, Tibor Grasser:
Transformation: nanotechnology - challenges in transistor design and future technologies. Elektrotech. Informationstechnik 134(7): 349-354 (2017) - [c16]Theresia Knobloch, Gerhard Rzepa, Yury Yu. Illarionov, Michael Waltl, Franz Schanovsky, Markus Jech, Bernhard Stampfer, Marco M. Furchi, Thomas Muller, Tibor Grasser:
Physical modeling of the hysteresis in M0S2 transistors. ESSDERC 2017: 284-287 - 2016
- [j29]Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Andreas Morhammer, Tibor Grasser, Ansgar Jüngel, Siegfried Selberherr:
ViennaCL - Linear Algebra Library for Multi- and Many-Core Architectures. SIAM J. Sci. Comput. 38(5) (2016) - [j28]Karl Rupp, Josef Weinbub, Ansgar Jüngel, Tibor Grasser:
Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units. ACM Trans. Math. Softw. 43(2): 11:1-11:27 (2016) - [c15]Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser:
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC 2016: 428-431 - 2015
- [j27]Prateek Sharma, Stanislav Tyaginov, Yannick Wimmer, Florian Rudolf, Karl Rupp, Hubert Enichlmair, J. H. Park, Hajdin Ceric, Tibor Grasser:
Comparison of analytic distribution function models for hot-carrier degradation modeling in nLDMOSFETs. Microelectron. Reliab. 55(9-10): 1427-1432 (2015) - [c14]Roberta Stradiotto, Gregor Pobegen, Clemens Ostermaier, Tibor Grasser:
On the fly characterization of charge trapping phenomena at GaN/dielectric and GaN/AlGaN/dielectric interfaces using impedance measurements. ESSDERC 2015: 72-75 - [c13]Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Max Christian Lemme, Tibor Grasser:
Interplay between hot carrier and bias stress components in single-layer double-gated graphene field-effect transistors. ESSDERC 2015: 172-175 - [c12]Ben Kaczer, Jacopo Franco, Pieter Weckx, Philippe Roussel, Erik Bury, Moonju Cho, Robin Degraeve, Dimitri Linten, Guido Groeseneken, Halil Kukner, Praveen Raghavan, Francky Catthoor, Gerhard Rzepa, Wolfgang Gös, Tibor Grasser:
The defect-centric perspective of device and circuit reliability - From individual defects to circuits. ESSDERC 2015: 218-225 - [c11]Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov:
Experimental evidences and simulations of trap generation along a percolation path. ESSDERC 2015: 226-229 - [c10]Jacopo Franco, Ben Kaczer, Philippe J. Roussel, Erik Bury, Hans Mertens, Romain Ritzenthaler, Tibor Grasser, Naoto Horiguchi, Aaron Thean, Guido Groeseneken:
NBTI in Si0.55Ge0.45 cladding p-FinFETs: Porting the superior reliability from planar to 3D architectures. IRPS 2015: 2 - [c9]Yury Illarionov, Michael Waltl, Anderson D. Smith, Sam Vaziri, Mikael Östling, Thomas Mueller, Max Christian Lemme, Tibor Grasser:
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors. IRPS 2015: 2 - [c8]Ben Kaczer, Jacopo Franco, M. Cho, Tibor Grasser, Philippe J. Roussel, Stanislav Tyaginov, M. Bina, Yannick Wimmer, Luis-Miguel Procel, Lionel Trojman, Felice Crupi, Gregory Pitner, Vamsi Putcha, Pieter Weckx, Erik Bury, Z. Ji, An De Keersgieter, Thomas Chiarella, Naoto Horiguchi, Guido Groeseneken, Aaron Thean:
Origins and implications of increased channel hot carrier variability in nFinFETs. IRPS 2015: 3 - [c7]Tibor Grasser, M. Wahl, Wolfgang Goes, Yannick Wimmer, Al-Moatasem El-Sayed, Alexander L. Shluger, Ben Kaczer:
On the volatility of oxide defects: Activation, deactivation, and transformation. IRPS 2015: 5 - [c6]Gerhard Rzepa, Wolfgang Goes, Ben Kaczer, Tibor Grasser:
Characterization and modeling of reliability issues in nanoscale devices. ISCAS 2015: 2445-2448 - 2014
- [j26]Gunnar Andreas Rott, Karina Rott, Hans Reisinger, Wolfgang Gustin, Tibor Grasser:
Mixture of negative bias temperature instability and hot-carrier driven threshold voltage degradation of 130 nm technology p-channel transistors. Microelectron. Reliab. 54(9-10): 2310-2314 (2014) - [j25]Vinicius V. A. Camargo, Ben Kaczer, Tibor Grasser, Gilson I. Wirth:
Circuit simulation of workload-dependent RTN and BTI based on trap kinetics. Microelectron. Reliab. 54(11): 2364-2370 (2014) - [j24]Vinicius V. A. Camargo, Ben Kaczer, Gilson I. Wirth, Tibor Grasser, Guido Groeseneken:
Use of SSTA Tools for Evaluating BTI Impact on Combinational Circuits. IEEE Trans. Very Large Scale Integr. Syst. 22(2): 280-285 (2014) - [c5]Tibor Grasser, Gerhard Rzepa, Michael Waltl, Wolfgang Goes, Karina Rott, Gunnar Andreas Rott, Hans Reisinger, Jacopo Franco, Ben Kaczer:
Characterization and modeling of charge trapping: From single defects to devices. ICICDT 2014: 1-4 - [c4]Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Tibor Grasser, Ansgar Jüngel:
Performance portability study of linear algebra kernels in OpenCL. IWOCL 2014: 8:1-8:11 - [i2]Karl Rupp, Philippe Tillet, Florian Rudolf, Josef Weinbub, Tibor Grasser, Ansgar Jüngel:
Performance Portability Study of Linear Algebra Kernels in OpenCL. CoRR abs/1409.0669 (2014) - [i1]Karl Rupp, Josef Weinbub, Ansgar Jüngel, Tibor Grasser:
Pipelined Iterative Solvers with Kernel Fusion for Graphics Processing Units. CoRR abs/1410.4054 (2014) - 2013
- [j23]Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. Microelectron. Reliab. 53(7): 937-946 (2013) - 2012
- [j22]Tibor Grasser:
Stochastic charge trapping in oxides: From random telegraph noise to bias temperature instabilities. Microelectron. Reliab. 52(1): 39-70 (2012) - [j21]Maria Toledano-Luque, Ben Kaczer, Jacopo Franco, Philippe Roussel, Tibor Grasser, Guido Groeseneken:
Defect-centric perspective of time-dependent BTI variability. Microelectron. Reliab. 52(9-10): 1883-1890 (2012) - [j20]Karina Rott, Hans Reisinger, Stefano Aresu, Christian Schlünder, Klaus Kölpin, Wolfgang Gustin, Tibor Grasser:
New insights on the PBTI phenomena in SiON pMOSFETs. Microelectron. Reliab. 52(9-10): 1891-1894 (2012) - [j19]Jacopo Franco, S. Graziano, Ben Kaczer, Felice Crupi, Lars-Åke Ragnarsson, Tibor Grasser, Guido Groeseneken:
BTI reliability of ultra-thin EOT MOSFETs for sub-threshold logic. Microelectron. Reliab. 52(9-10): 1932-1935 (2012) - [c3]Jacopo Franco, Ben Kaczer, Jérôme Mitard, Maria Toledano-Luque, Felice Crupi, Geert Eneman, Ph. J. Rousse, Tibor Grasser, M. Cho, Thomas Kauerauf, Liesbeth Witters, Geert Hellings, L.-Å. Ragnarsson, Naoto Horiguchi, Marc M. Heyns, Guido Groeseneken:
Superior reliability and reduced Time-Dependent variability in high-mobility SiGe channel pMOSFETs for VLSI logic applications. ICICDT 2012: 1-4 - 2011
- [j18]Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser:
An analytical approach for physical modeling of hot-carrier induced degradation. Microelectron. Reliab. 51(9-11): 1525-1529 (2011) - [j17]Gregor Pobegen, Thomas Aichinger, Tibor Grasser, Michael Nelhiebel:
Impact of gate poly doping and oxide thickness on the N- and PBTI in MOSFETs. Microelectron. Reliab. 51(9-11): 1530-1534 (2011) - [c2]Karl Rupp, Ansgar Jüngel, Tibor Grasser:
A GPU-Accelerated Parallel Preconditioner for the Solution of the Boltzmann Transport Equation for Semiconductors. Facing the Multicore-Challenge 2011: 147-157 - 2010
- [j16]Karl Rupp, Ansgar Jüngel, Tibor Grasser:
Matrix compression for spherical harmonics expansions of the Boltzmann transport equation for semiconductors. J. Comput. Phys. 229(23): 8750-8765 (2010) - [j15]Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser:
Interface traps density-of-states as a vital component for hot-carrier degradation modeling. Microelectron. Reliab. 50(9-11): 1267-1272 (2010)
2000 – 2009
- 2009
- [j14]Stanislav Tyaginov, Viktor Sverdlov, Ivan A. Starkov, Wolfgang Gös, Tibor Grasser:
Impact of O-Si-O bond angle fluctuations on the Si-O bond-breakage rate. Microelectron. Reliab. 49(9-11): 998-1002 (2009) - [j13]Ph. Hehenberger, P.-J. Wagner, Hans Reisinger, Tibor Grasser:
On the temperature and voltage dependence of short-term negative bias temperature stress. Microelectron. Reliab. 49(9-11): 1013-1017 (2009) - [c1]M. Vasicek, Viktor Sverdlov, Johann Cervenka, Tibor Grasser, Hans Kosina, Siegfried Selberherr:
Transport in Nanostructures: A Comparative Analysis Using Monte Carlo Simulation, the Spherical Harmonic Method, and Higher Moments Models. LSSC 2009: 443-450 - 2008
- [j12]Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
On the temperature dependence of NBTI recovery. Microelectron. Reliab. 48(8-9): 1178-1184 (2008) - 2007
- [j11]Stefan Holzer, Alireza Sheikholeslami, Markus Karner, Tibor Grasser, Siegfried Selberherr:
Comparison of deposition models for a TEOS LPCVD process. Microelectron. Reliab. 47(4-5): 623-625 (2007) - [j10]Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer:
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures. Microelectron. Reliab. 47(4-5): 697-699 (2007) - [j9]Markus Karner, Andreas Gehring, M. Wagner, Robert Entner, Stefan Holzer, Wolfgang Goes, M. Vasicek, Tibor Grasser, Hans Kosina, Siegfried Selberherr:
VSP - A gate stack analyzer. Microelectron. Reliab. 47(4-5): 704-708 (2007) - [j8]Tibor Grasser, Siegfried Selberherr:
Editorial. Microelectron. Reliab. 47(6): 839-840 (2007) - [j7]Michael Spevak, Tibor Grasser:
Discretization of Macroscopic Transport Equations on Non-Cartesian Coordinate Systems. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 26(8): 1408-1416 (2007) - 2006
- [j6]Johann Cervenka, W. Wessner, E. Al-Ani, Tibor Grasser, Siegfried Selberherr:
Generation of Unstructured Meshes for Process and Device Simulation by Means of Partial Differential Equations. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 25(10): 2118-2128 (2006) - 2005
- [j5]Stephan Wagner, Tibor Grasser, Claus Fischer, Siegfried Selberherr:
An advanced equation assembly module. Eng. Comput. 21(2): 151-163 (2005) - 2004
- [j4]Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr:
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. Microelectron. J. 35(10): 805-810 (2004) - [j3]Tesfaye Ayalew, Andreas Gehring, Tibor Grasser, Siegfried Selberherr:
Enhancement of breakdown voltage for Ni-SiC Schottky diodes utilizing field plate edge termination. Microelectron. Reliab. 44(9-11): 1473-1478 (2004) - 2003
- [j2]Tesfaye Ayalew, Andreas Gehring, Jong Mun Park, Tibor Grasser, Siegfried Selberherr:
Improving SiC lateral DMOSFET reliability under high field stress. Microelectron. Reliab. 43(9-11): 1889-1894 (2003) - [j1]Tibor Grasser, Ting-Wei Tang, Hans Kosina, Siegfried Selberherr:
A review of hydrodynamic and energy-transport models for semiconductor device simulation. Proc. IEEE 91(2): 251-274 (2003)
Coauthor Index
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