"An analytical approach for physical modeling of hot-carrier induced ..."

Stanislav Tyaginov et al. (2011)

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DOI: 10.1016/J.MICROREL.2011.07.089

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type: Journal Article

metadata version: 2021-10-14

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Stanislav Tyaginov, Ivan A. Starkov, Hubert Enichlmair, C. Jungemann, Jong Mun Park, Ehrenfried Seebacher, R. L. de Orio, Hajdin Ceric, Tibor Grasser:
An analytical approach for physical modeling of hot-carrier induced degradation. Microelectron. Reliab. 51(9-11): 1525-1529 (2011)

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