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2020 – today
- 2023
[c15]Michiel Vandemaele, Ben Kaczer, Erik Bury, Jacopo Franco, Adrian Chasin, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken
:
Investigating Nanowire, Nanosheet and Forksheet FET Hot-Carrier Reliability via TCAD Simulations: Invited Paper. IRPS 2023: 1-10- 2022
- [c14]Stanislav Tyaginov, Alexander Makarov, Al-Moatasem Bellah El-Sayed, Adrian Vaisman Chasin, Erik Bury, Markus Jech, Michiel Vandemaele, Alexander Grill, An De Keersgieter, Mikhail I. Vexler, Geert Eneman, Ben Kaczer:
Understanding and Modeling Opposite Impacts of Self-Heating on Hot-Carrier Degradation in n- and p-Channel Transistors. IRPS 2022: 6 - [c13]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Erik Bury, Adrian Vaisman Chasin, Jacopo Franco, Alexander Makarov, Hans Mertens, Geert Hellings, Guido Groeseneken:
Simulation Comparison of Hot-Carrier Degradation in Nanowire, Nanosheet and Forksheet FETs. IRPS 2022: 6 - [c12]Stanislav Tyaginov, Aryan Afzalian, Alexander Makarov, Alexander Grill, Michiel Vandemaele, Maksim Cherenev, Mikhail I. Vexler, Geert Hellings, Ben Kaczer:
On Superior Hot Carrier Robustness of Dynamically-Doped Field-Effect-Transistors. IRPS 2022: 11 - 2020
- [j2]Nikolay Russkikh, Denis V. Antonets, Dmitry Shtokalo, Alexander Makarov, Yuri Vyatkin, Alexey Zakharov, Evgeny Terentyev:
Style transfer with variational autoencoders is a promising approach to RNA-Seq data harmonization and analysis. Bioinform. 36(20): 5076-5085 (2020) - [c11]Stanislav Tyaginov, Alexander Grill, Michiel Vandemaele, Tibor Grasser, Geert Hellings, Alexander Makarov, Markus Jech, Dimitri Linten, Ben Kaczer:
A Compact Physics Analytical Model for Hot-Carrier Degradation. IRPS 2020: 1-7
2010 – 2019
- 2019
- [c10]Roberto Lacerda de Orio, Alexander Makarov, Siegfried Selberherr, Wolfgang Goes, Johannes Ender, Simone Fiorentini, Viktor Sverdlov:
Switching Speedup of the Magnetic Free Layer of Advanced SOT-MRAM. ESSDERC 2019: 146-149 - [c9]Alexander Makarov, Dimitri Linten, Stanislav Tyaginov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Markus Jech, Tibor Grasser:
Stochastic Modeling of Hot-Carrier Degradation in nFinFETs Considering the Impact of Random Traps and Random Dopants. ESSDERC 2019: 262-265 - [c8]Alexander Makarov, Ben Kaczer, Philippe Roussel, Adrian Vaisman Chasin, Alexander Grill, Michiel Vandemaele, Geert Hellings, Al-Moatasem El-Sayed, Tibor Grasser, Dimitri Linten, Stanislav Tyaginov:
Modeling the Effect of Random Dopants on Hot-Carrier Degradation in FinFETs. IRPS 2019: 1-7 - [c7]Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken:
Full (Vg, Vd) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS 2019: 1-7 - 2016
- [c6]Thomas Windbacher, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
The exploitation of magnetization orientation encoded spin-transfer torque for an ultra dense non-volatile magnetic shift register. ESSDERC 2016: 311-314 - [c5]Prateek Sharma, Stanislav Tyaginov, Stewart E. Rauch, Jacopo Franco, Ben Kaczer, Alexander Makarov, Mikhail I. Vexler, Tibor Grasser:
A drift-diffusion-based analytic description of the energy distribution function for hot-carrier degradation in decananometer nMOSFETs. ESSDERC 2016: 428-431 - 2015
- [c4]Alexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr:
SOT-MRAM based on 1Transistor-1MTJ-cell structure. NVMTS 2015: 1-4 - 2014
- [c3]Viktor Sverdlov, Hiwa Mahmoudi, Alexander Makarov, Siegfried Selberherr:
Magnetic tunnel junctions for future memory and logic-in-memory applications. MIXDES 2014: 30-33 - 2012
- [j1]Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
Emerging memory technologies: Trends, challenges, and modeling methods. Microelectron. Reliab. 52(4): 628-634 (2012) - 2011
- [c2]Dmitry Osintsev, Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
Efficient Simulations of the Transport Properties of Spin Field-Effect Transistors Built on Silicon Fins. LSSC 2011: 630-637 - 2010
- [c1]Alexander Makarov, Viktor Sverdlov, Siegfried Selberherr:
Modeling of the SET and RESET Process in Bipolar Resistive Oxide-Based Memory Using Monte Carlo Simulations. NMA 2010: 87-94
Coauthor Index
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