"Full (Vg, Vd) Bias Space Modeling of Hot-Carrier ..."

Michiel Vandemaele et al. (2019)

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DOI: 10.1109/IRPS.2019.8720406

access: closed

type: Conference or Workshop Paper

metadata version: 2023-05-24

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Michiel Vandemaele, Ben Kaczer, Stanislav Tyaginov, Zlatan Stanojevic, Alexander Makarov, Adrian Vaisman Chasin, Erik Bury, Hans Mertens, Dimitri Linten, Guido Groeseneken:
Full (V_g, V_d) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs. IRPS 2019: 1-7

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