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ORCIDNVMTS 2015: Beijing, China
- 15th Non-Volatile Memory Technology Symposium, NVMTS 2015, Beijing, China, October 12-14, 2015. IEEE 2015, ISBN 978-1-5090-2126-0
- Thomas P. Parnell, Nikolaos Papandreou, Thomas Mittelholzer, Haralampos Pozidis:
Performance of cell-to-cell interference mitigation in 1y-nm MLC flash memory. 1-4 - Xiaorong Chen, Jie Feng, Haili Ma:
The resistive switching characteristics in tantalum oxide-based RRAM device via combining high-temperature sputtering with plasma oxidation. 1-5 - Cong Li, Shunqiang Xu, Yaling Chen, Jiancheng Li, Zhenjiang Sun:
An enhanced erase mechanism for single poly embedded flash memory. 1-4 - Fei Zeng, X. J. Li, J. T. Zhang, Y. D. Hu, W. S. Dong, S. H. Lu, A. Liu:
Excitatory post-synaptic current and synaptic plasticity of semiconducting polymer/electrolyte system. 1-4 - Lorenzo Zuolo, Cristian Zambelli
, Rino Micheloni, Stephen Bates, Piero Olivo:
Design space exploration of latency and bandwidth in RRAM-based solid state drives. 1-4 - X. J. Li, Fei Zeng, J. T. Zhang, Y. D. Hu, W. S. Dong, S. H. Lu, A. Liu:
Influence of ionic size to the pulse responses of semiconducting polymer/electrolyte hetero-junctions. 1-4 - Deming Zhang, Lang Zeng, Fanghui Gong, Tianqi Gao, Shaolong Gao, Youguang Zhang, Weisheng Zhao:
Realization of neural coding by stochastic switching of magnetic tunnel junction. 1-4 - Yu-Hsuan Chen, Jr-Jie Tsai, Yan-Xiang Luo, Chun-Hsing Shih:
Iterative programming analysis of dopant-segregated multibit/cell Schottky barrier charge-trapping memories. 1-3 - Peng Yao, Huaqiang Wu, Bin Gao, Guo Zhang, He Qian:
The effect of variation on neuromorphic network based on 1T1R memristor array. 1-3 - Yichen Fang, Yimao Cai, Zongwei Wang, Zhizhen Yu, Xue Yang, Ru Huang:
Influence of selector-introduced compliance current on HfOx RRAM switching operation. 1-3 - Xiangchao Ma, Huaqiang Wu, Dong Wu, He Qian:
A 16 Mb RRAM test chip based on analog power system with tunable write pulses. 1-3 - H. Kazama, Takayuki Kawahara:
STT-RAM read stability in DRAM operating region. 1-4 - Tingting Pang, Wang Kang, Yi Ran, Youguang Zhang, Weifeng Lv, Weisheng Zhao:
Nonvolatile radiation hardened DICE latch. 1-4 - Dong Wang, Lei Deng, Pei Tang, Cheng Ma, Jing Pei:
FPGA-based neuromorphic computing system with a scalable routing network. 1-4 - Yanjun Ma, Yue Li, Edwin C. Kan, Jehoshua Bruck:
Reliability and hardware implementation of rank modulation flash memory. 1-5 - Xinyi Li, Huaqiang Wu, Ning Deng, He Qian:
1S1R device with self-compliance property for high density cross-point memory applications. 1-3 - Lei Deng, Dong Wang, Guoqi Li, Ziyang Zhang, Jing Pei:
A new computing rule for neuromorphic engineering. 1-3 - Alessandro Grossi, Cristian Zambelli, Piero Olivo, Jérémy Alvarez-Herault, Ken Mackay:
Reliability and cell-to-cell variability of TAS-MRAM arrays under cycling conditions. 1-4 - Manan Suri, Vivek Parmar, Ashwani Kumar, Damien Querlioz, Fabien Alibart:
Neuromorphic hybrid RRAM-CMOS RBM architecture. 1-6 - Alexander Makarov, Thomas Windbacher, Viktor Sverdlov, Siegfried Selberherr:
SOT-MRAM based on 1Transistor-1MTJ-cell structure. 1-4 - Pankaj Kumbhare, Indranil Chakraborty, A. K. Singh, S. Chouhan, Neeraj Panwar, Udayan Ganguly:
A selectorless RRAM with record memory window and nonlinearity based on trap filled limit mechanism. 1-3 - Xinglong Ji, Mi Zhou, Liangcai Wu, Liangliang Cao, Zhitang Song:
Understanding the crystallization mechanism of Ge-Te-Ti phase change material. 1-4 - Shikai Wang, Cheng Ma, Dong Wang, Jing Pei:
Extensible neuromorphic computing simulator based on a programmable hardware. 1-3 - Alexandre Levisse, Bastien Giraud, Jean-Philippe Noël, Mathieu Moreau, Jean-Michel Portal:
SneakPath compensation circuit for programming and read operations in RRAM-based CrossPoint architectures. 1-4 - Hongmin Li, Jing Pei, Guoqi Li:
Real-time tracking based on neuromrophic vision. 1-7 - Nian-Ke Chen, Xue-Peng Wang, Xian-Bin Li:
Origin of high data retention for Ge1Cu2Te3 phase-change memory. 1-4 - Yanjun Ma:
Nonvolatile multibit SRAM, bit level caching, and multi-context computing for IoT. 1-3 - Beiye Liu, Xiaoxiao Liu, Chenchen Liu, Wei Wen, M. Meng, Hai Li, Yiran Chen:
Hardware acceleration for neuromorphic computing: An evolving view. 1-4 - Chong Chen, Yiqun Wei, Jianwei Zhao, Xinnan Lin, Zhitang Song:
Three-dimensional ovonic threshold switching model with combination of in-band and trap-to-band hopping mechanism for chalcogenide-based phase-change memory. 1-3 - Wenqiang Luo, Fang-Yuan Yuan, Huaqiang Wu, Liyang Pan, Ning Deng, Fei Zeng, Rongshan Wei, Xuanjing Cai:
Synaptic learning behaviors achieved by metal ion migration in a Cu/PEDOT: PSS/Ta memristor. 1-4 - Shintaro Izumi, Hiroshi Kawaguchi, Masahiko Yoshimoto, Hiromitsu Kimura, Takaaki Fuchikami, Kyoji Marumoto, Yoshikazu Fujimori:
A ferroelectric-based non-volatile flip-flop for wearable healthcare systems. 1-4 - Xue Yang, Yimao Cai, Zhenxing Zhang, Muxi Yu, Ru Huang:
An electronic synapse based on tantalum oxide material. 1-4 - Frank Zhigang Wang, Leon O. Chua, Na Helian:
Memristor-based random access memory: The delayed switching effect could revolutionize memory design. 1-8 - Mingqing Wang, Ning Deng, Huaqiang Wu, Qian He:
Theory study and implementation of configurable ECC on RRAM memory. 1-3 - Hong Chao, Fang-Yuan Yuan, Huaqiang Wu, Ning Deng, Zhong-Zhen Yu, Rongshan Wei:
Graphene oxide and TiO2 nano-particle composite based nonvolatile memory. 1-4 - Jianwei Zhao, Yiqun Wei, Chong Chen, Xinnan Lin, Zhitang Song:
A three-dimensional numerical simulator of phase-change memory by random nucleation and growth approach. 1-4
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