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Louis Gerrer
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2020 – today
- 2021
- [c6]Tadeu Mota Frutuoso, Jose Lugo-Alvarez, Xavier Garros, Laurent Brunet, Joris Lacord, Louis Gerrer, Mikaël Cassé, Edoardo Catapano, Claire Fenouillet-Béranger, François Andrieu, Fred Gaillard, Philippe Ferrari:
Impact of spacer interface charges on performance and reliability of low temperature transistors for 3D sequential integration. IRPS 2021: 1-5 - [c5]Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS 2021: 1-5
2010 – 2019
- 2015
- [j4]Louis Gerrer, Vihar P. Georgiev, Salvatore M. Amoroso, Ewan Towie, A. Asenov:
Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations. Microelectron. Reliab. 55(9-10): 1307-1312 (2015) - [c4]Louis Gerrer, Razaidi Hussin, Salvatore M. Amoroso, Jacopo Franco, Pieter Weckx, Marko Simicic, N. Horiguchi, Ben Kaczer, Tibor Grasser, Asen Asenov:
Experimental evidences and simulations of trap generation along a percolation path. ESSDERC 2015: 226-229 - [c3]Razaidi Hussin, Louis Gerrer, Jie Ding, Liping Wang, Salvatore M. Amoroso, Binjie Cheng, Dave Reid, Pieter Weckx, Marko Simicic, Jacopo Franco, Annelies Vanderheyden, Danielle Vanhaeren, Naoto Horiguchi, Ben Kaczer, Asen Asenov:
Statistical simulations of 6T-SRAM cell ageing using a reliability aware simulation flow. ESSDERC 2015: 238-241 - [c2]A. Asenov, Jie Ding, Dave Reid, Plamen Asenov, Salvatore M. Amoroso, Fikru Adamu-Lema, Louis Gerrer:
Unified approach for simulation of statistical reliability in nanoscale CMOS transistors from devices to circuits. ISCAS 2015: 2449-2452 - 2014
- [j3]Louis Gerrer, Jie Ding, Salvatore M. Amoroso, Fikru Adamu-Lema, Razaidi Hussin, Dave Reid, Campbell Millar, A. Asenov:
Modelling RTN and BTI in nanoscale MOSFETs from device to circuit: A review. Microelectron. Reliab. 54(4): 682-697 (2014) - [j2]Louis Gerrer, Salvatore M. Amoroso, Razaidi Hussin, Asen Asenov:
RTN distribution comparison for bulk, FDSOI and FinFETs devices. Microelectron. Reliab. 54(9-10): 1749-1752 (2014) - 2012
- [j1]Louis Gerrer, Stanislav Markov, Salvatore M. Amoroso, Fikru Adamu-Lema, Asen Asenov:
Impact of random dopant fluctuations on trap-assisted tunnelling in nanoscale MOSFETs. Microelectron. Reliab. 52(9-10): 1918-1923 (2012) - [c1]Salvatore M. Amoroso, Louis Gerrer, Stanislav Markov, Fikru Adamu-Lema, Asen Asenov:
Comprehensive statistical comparison of RTN and BTI in deeply scaled MOSFETs by means of 3D 'atomistic' simulation. ESSDERC 2012: 109-112
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