"Comparison of Si < 100 > and < 110 > crystal orientation ..."

Louis Gerrer et al. (2015)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2015.06.094

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/GerrerGATA15
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/GerrerGATA15
Louis Gerrer, Vihar P. Georgiev, Salvatore M. Amoroso, Ewan Towie, A. Asenov:
Comparison of Si < 100 > and < 110 > crystal orientation nanowire transistor reliability using Poisson-Schrödinger and classical simulations. Microelectron. Reliab. 55(9-10): 1307-1312 (2015)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.