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2020 – today
- 2022
[c11]J. P. Bastos, Barry J. O'Sullivan, Jacopo Franco, Stanislav Tyaginov, Brecht Truijen, Adrian Vaisman Chasin, Robin Degraeve, Ben Kaczer, Romain Ritzenthaler, Elena Capogreco, E. Dentoni Litta
, Alessio Spessot, Yusuke Higashi, Y. Yoon, V. Machkaoutsan, Pierre Fazan, N. Horiguchi:
Bias Temperature Instability (BTI) of High-Voltage Devices for Memory Periphery. IRPS 2022: 1-6- [c10]Romain Ritzenthaler, Elena Capogreco, E. Dupuy, Hiroaki Arimura, J. P. Bastos, P. Favia, F. Sebaai, D. Radisic, V. T. H. Nguyen, G. Mannaert, B. T. Chan, V. Machkaoutsan, Y. Yoon, H. Itokawa, M. Yamaguchi, Y. Chen, Pierre Fazan, S. Subramanian, Alessio Spessot, E. Dentoni Litta, S. Samavedam, Naoto Horiguchi:
High Performance Thermally Resistant FinFETs DRAM Peripheral CMOS FinFETs with VTH Tunability for Future Memories. VLSI Technology and Circuits 2022: 306-307
2010 – 2019
- 2019
- [c9]Barry J. O'Sullivan, Romain Ritzenthaler, Gerhard Rzepa, Z. Wu, E. Dentoni Litta, O. Richard, T. Conard, V. Machkaoutsan, Pierre Fazan, C. Kim, Jacopo Franco, Ben Kaczer, Tibor Grasser, Alessio Spessot, Dimitri Linten, N. Horiguchi:
Gate-Stack Engineered NBTI Improvements in Highvoltage Logic-For-Memory High-ĸ/Metal Gate Devices. IRPS 2019: 1-8 - 2015
- [c8]Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten:
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT 2015: 1-4 - [c7]Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son:
I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration. ICICDT 2015: 1-4 - [c6]Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son:
Assessment of SiGe quantum well transistors for DRAM peripheral applications. ICICDT 2015: 1-4 - [c5]Alessio Spessot, Romain Ritzenthaler, Tom Schram, Marc Aoulaiche, Moonju Cho, Maria Toledano-Luque, Naoto Horiguchi, Pierre Fazan:
Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs. ICICDT 2015: 1-4 - 2013
- [c4]Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh:
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC 2013: 190-193 - 2012
- [c3]Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan:
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC 2012: 242-245 - [c2]Eddy Simoen, Marc Aoulaiche, Anabela Veloso, M. Jurczak, Cor Claeys, L. Mendes Almeida, Maria Glória Caño de Andrade, A. Luque Rodriguez, J. A. Jimenez Tejada, Christian Caillat, Pierre Fazan:
On the correlation between the retention time of FBRAM and the low-frequency noise of UTBOX SOI nMOSFETs. ESSDERC 2012: 338-341
2000 – 2009
- 2005
- [c1]Serguei Okhonin, Pierre Fazan, Mark-Eric Jones:
Zero capacitor embedded memory technology for system on chip. MTDT 2005: xxi-xxv
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