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2020 – today
- 2024
[c15]S. Ghosh, A. Kruv, Quentin Smets, Tom Schram, D. J. Leech, T. Ding, V. Turkani, Benjamin Groven, A. Dangel, G. Probst, Thomas Uhrmann, Markus Wimplinger, Inge Asselberghs, Cesar J. Lockhart de la Rosa, Steven Brems, Gouri Sankar Kar:
EOT Scaling Via 300mm MX2 Dry Transfer - Steps Toward a Manufacturable Process Development and Device Integration. VLSI Technology and Circuits 2024: 1-2- 2023
- [c14]L. Panarella, Ben Kaczer, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, Dennis Lin, Stanislav Tyaginov, I. Asselberghs, Cesar J. Lockhart de la Rosa, Gouri Sankar Kar, Valeri Afanas'ev:
Impact of gate stack processing on the hysteresis of 300 mm integrated WS2 FETs. IRPS 2023: 1-6 - [c13]Souvik Ghosh
, Quentin Smets, S. Banerjee, Tom Schram, Koen Kennes, R. Verheyen, P. Kumar, M.-E. Boulon, Benjamin Groven, H. M. Silva, Shreya Kundu, Daire Cott, Dennis Lin, P. Favia, T. Nuytten, A. Phommahaxay, Inge Asselberghs, C. De La Rosa, Gouri Sankar Kar, Steven Brems:
Integration of epitaxial monolayer MX₂ channels on 300mm wafers via Collective-Die-To-Wafer (CoD2W) transfer. VLSI Technology and Circuits 2023: 1-2 - [c12]Shreya Kundu, D. H. van Doip, Tom Schram, Quentin Smets, S. Banerjee, Benjamin Groven, Daire Cott, Stefan Decoster, P. Bezard, F. Lazzarino, K. Banerjee, Souvik Ghosh, J. F. de Mamelfe, Pierre Morin, Cesar J. Lockhart de la Rosa, Inge Asselberghs, Gouri Sankar Kar:
Towards low damage and fab-compatible top-contacts in MX2 transistors using a combined synchronous pulse atomic layer etch and wet-chemical etch approach. VLSI Technology and Circuits 2023: 1-2 - 2022
- [c11]L. Panarella, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, I. Asselberghs, Ben Kaczer:
Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. DRC 2022: 1-2 - [c10]Anabela Veloso, Anne Jourdain, D. Radisic, Rongmei Chen, G. Arutchelvan, B. O'Sullivan, Hiroaki Arimura, Michele Stucchi, An De Keersgieter, M. Hosseini, T. Hopf, K. D'Have, S. Wang, E. Dupuy, G. Mannaert, Kevin Vandersmissen, S. Iacovo, P. Marien, S. Choudhury, F. Schleicher, F. Sebaai, Yusuke Oniki, X. Zhou, A. Gupta, Tom Schram, B. Briggs, C. Lorant, E. Rosseel, Andriy Hikavyy, Roger Loo, J. Geypen, D. Batuk, G. T. Martinez, J. P. Soulie, Katia Devriendt, B. T. Chan, S. Demuynck, Gaspard Hiblot, Geert Van der Plas, Julien Ryckaert, Gerald Beyer, E. Dentoni Litta, Eric Beyne, Naoto Horiguchi:
Scaled FinFETs Connected by Using Both Wafer Sides for Routing via Buried Power Rails. VLSI Technology and Circuits 2022: 284-285
2010 – 2019
- 2017
- [c9]Tom Schram, Quentin Smets, Benjamin Groven, M. H. Heyne, E. Kunnen, A. Thiam, Katia Devriendt, Annelies Delabie, Dennis Lin, M. Lux, Daniele Chiappe, I. Asselberghs, S. Brus, Cedric Huyghebaert, S. Sayan, A. Juncker, Matty Caymax, Iuliana P. Radu:
WS2 transistors on 300 mm wafers with BEOL compatibility. ESSDERC 2017: 212-215 - 2016
- [c8]Thomas Chiarella, Stefan Kubicek, E. Rosseel, Romain Ritzenthaler, Andriy Hikavyy, P. Eyben, An De Keersgieter, L.-Å. Ragnarsson, M.-S. Kim, S.-A. Chew, Tom Schram, S. Demuynck, Miroslav Cupák, Luc Rijnders, Morin Dehan, Naoto Horiguchi, Jérôme Mitard, Dan Mocuta, Anda Mocuta, Aaron Voon-Yew Thean:
Towards high performance sub-10nm finW bulk FinFET technology. ESSDERC 2016: 131-134 - 2015
- [c7]Moonju Cho, Alessio Spessot, Ben Kaczer, Marc Aoulaiche, Romain Ritzenthaler, Tom Schram, Pierre Fazan, Naoto Horiguchi, Dimitri Linten:
Off-state stress degradation mechanism on advanced p-MOSFETs. ICICDT 2015: 1-4 - [c6]Romain Ritzenthaler, Tom Schram, M. J. Cho, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Christian Caillat, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son:
I/O thick oxide device integration using Diffusion and Gate Replacement (D&GR) gate stack integration. ICICDT 2015: 1-4 - [c5]Romain Ritzenthaler, Tom Schram, Geert Eneman, Anda Mocuta, Naoto Horiguchi, Aaron Voon-Yew Thean, Alessio Spessot, Marc Aoulaiche, Pierre Fazan, K. B. Noh, Y. Son:
Assessment of SiGe quantum well transistors for DRAM peripheral applications. ICICDT 2015: 1-4 - [c4]Alessio Spessot, Romain Ritzenthaler, Tom Schram, Marc Aoulaiche, Moonju Cho, Maria Toledano-Luque, Naoto Horiguchi, Pierre Fazan:
Reliability impact of advanced doping techniques for DRAM peripheral MOSFETs. ICICDT 2015: 1-4 - 2014
- [c3]Alessio Spessot, Marc Aoulaiche, Moonju Cho, Jacopo Franco, Tom Schram, Romain Ritzenthaler, Ben Kaczer:
Impact of Off State Stress on advanced high-K metal gate NMOSFETs. ESSDERC 2014: 365-368 - 2013
- [c2]Marc Aoulaiche, Eddy Simoen, Romain Ritzenthaler, Tom Schram, Hiroaki Arimura, Moonju Cho, Thomas Kauerauf, Guido Groeseneken, Naoto Horiguchi, Aaron Thean, Antonio Federico, Felice Crupi, Alessio Spessot, Christian Caillat, Pierre Fazan, Hyuokju Na, Y. Son, K. B. Noh:
Impact of Al2O3 position on performances and reliability in high-k metal gated DRAM periphery transistors. ESSDERC 2013: 190-193 - 2012
- [c1]Romain Ritzenthaler, Tom Schram, Erik Bury, Jérôme Mitard, L.-Å. Ragnarsson, Guido Groeseneken, N. Horiguchi, Aaron Thean, Alessio Spessot, Christian Caillat, V. Srividya, Pierre Fazan:
Low-power DRAM-compatible Replacement Gate High-k/Metal Gate stacks. ESSDERC 2012: 242-245
2000 – 2009
- 2007
- [j3]Z. Li, Tom Schram, Luigi Pantisano, A. Stesmans, Thierry Conard, S. Shamuilia, V. V. Afanasiev, A. Akheyar, Sven Van Elshocht, D. P. Brunco, W. Deweerd, Y. Naoki, P. Lehnen, Stefan De Gendt, Kristin De Meyer:
Mechanism of O2-anneal induced Vfb shifts of Ru gated stacks. Microelectron. Reliab. 47(4-5): 518-520 (2007) - 2005
- [j2]Tom Schram, L.-Å. Ragnarsson, G. S. Lujan, W. Deweerd, J. Chen, W. Tsai, K. Henson, R. J. P. Lander, J. C. Hooker, J. Vertommen:
Performance improvement of self-aligned HfO2/TaN and SiON/TaN nMOS transistors. Microelectron. Reliab. 45(5-6): 779-782 (2005) - [j1]W. Deweerd, Vidya Kaushik, J. Chen, Y. Shimamoto, Tom Schram, L.-Å. Ragnarsson, Annelies Delabie, Luigi Pantisano, B. Eyckens, J. W. Maes:
Potential remedies for the VT/Vfb-shift problem of Hf/polysilicon-based gate stacks: a solution-based survey. Microelectron. Reliab. 45(5-6): 786-789 (2005)
Coauthor Index
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