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ORCIDDRC 2022: Columbus, OH, USA
- Device Research Conference, DRC 2022, Columbus, OH, USA, June 26-29, 2022. IEEE 2022, ISBN 978-1-6654-9883-8
- Jie Zhang, Yuping Zeng:
High-performance TiO2 thin film transistors using TiO2 as both channel and dielectric. 1-2 - Zijing Zhao
, Kai Xu, Jialun Liu, Wei Jiang, Hojoon Ryu, Shaloo Rakheja, Tony Low, Wenjuan Zhu:
Nanoscale Devices Based on Two-dimensional and Ferroelectric Materials. 1-2 - Bill Zivasatienraj, W. Alan Doolittle:
An Experimentally Validated, Universal Memristor Model Enabling Temporal Neuromorphic Computation. 1-2 - Ping Wang, Ding Wang, Shubham Mondal, Zetian Mi:
Fully Epitaxial Ferroelectric III-Nitride Semiconductors: From Materials to Devices. 1-2 - Patrick Fay, Nivedhita Venkatesan, Jeong-Sun Moon:
Polarization-Engineering of III-N mm-Wave Transistors for High Efficiency and Linearity. 1-2 - Po Chun Chen, Peter M. Asbeck, Shadi A. Dayeh:
Free-Standing High Power GaN Multi-Fin Camel Diode Varactors. 1-2 - Shamiul Alam, Md. Mazharul Islam, Md. Shafayat Hossain, Ahmedullah Aziz:
Superconducting Josephson Junction FET-based Cryogenic Voltage Sense Amplifier. 1-2 - Saikat Chakraborty, Jaydeep P. Kulkarni:
Cryo-TRAM: Gated Thyristor based Capacitor-less DRAM for Cryogenic Computing. 1-2 - Eungkyun Kim, Zexuan Zhang, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing:
First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates. 1-2 - Asmita S. Thool, Sourodeep Roy, Abhishek Misra, Bhaswar Chakrabarti:
Controllable Defect Engineering in 2D-MoS2 for high-performance, threshold switching memristive devices. 1-2 - Saikat Chakraborty, Jaydeep P. Kulkarni:
Buried-Channel Ferroelectric FET as Energy Efficient and Reliable 1T-NVM. 1-2 - Nour Negm, Sarah Zayouna, Shayan Parhizkar, Pen-Sheng Lin, Po-Han Huang, Stephan Suckow, Stephan Schröder, Eleonora De Luca, Floria Ottonello Briano, Arne Quellmalz, Frank Niklaus, Kristinn B. Gylfason, Max Christian Lemme:
Graphene waveguide-integrated thermal infrared emitter. 1-2 - Joong-Won Shin, Masakazu Tanuma, J. Pyo, Shun'ichiro Ohmi:
Ultrathin Ferroelectric Nondoped HfO2 for MFSFET with High-speed and Low-voltage Operation. 1-2 - Bohao Wu, Shaloo Rakheja:
Modeling of the Charge-Voltage Characteristics of AlScN/AlN/GaN Heterostructures. 1 - Adam Charnas, Jackson Anderson, Jie Zhang, Dongqi Zheng, Dana Weinstein, Peide D. Ye:
Record RF Performance of Ultra-thin Indium Oxide Transistors with Buried-gate Structure. 1-2 - Rishab Mehra, S. S. Teja Nibhanupudi, Jaydeep P. Kulkarni:
Statistical Analysis of 2T1R Gain-Cell RRAM Bitcell for Area Efficient, High-Performance, and Reliable Multi-level Cell Operation. 1-2 - Tommaso Stecconi, Youri Popoff, Roberto Guido, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia:
Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. 1-2 - Phanish Chava, Kenji Watanabe, Takashi Taniguchi, Thomas Mikolajick, Manfred Helm, Artur Erbe:
Tunneling transport in WSe2-MoS2 heterojunction transistor enabled by a two-dimensional device architecture. 1-2 - Kenneth Lin, Nitin Prasad, G. William Burg, Kenji Watanabe, Takashi Taniguchi, Emanuel Tutuc:
Gate-Tunable Resonant Tunneling in a Dual-Gated Twist-Controlled Double Monolayer Graphene-hBN Heterostructure. 1-2 - Dennis Braun, Sebastian Lukas, Lukas Völkel, Oliver Hartwig, Maximilian Prechtl, Melkamu Belete, Satender Kataria, Thorsten Wahlbrink, Alwin Daus, Georg S. Duesberg, Max Christian Lemme:
Non-Volatile Resistive Switching in PtSe2-Based Crosspoint Memristors. 1-2 - Wenshen Li, Debdeep Jena, Huili Grace Xing:
A Composite TE-TFE-FE Model for Schottky Barrier Reverse Current over the Entire Electric-Field Range. 1-2 - Lauren Hoang, Alwin Daus, Sumaiya Wahid, Jimin Kwon, Jung-Soo Ko, Shengjun Qin, Mahnaz Islam, Krishna C. Saraswat, H.-S. Philip Wong, Eric Pop:
Bias Stress Stability of ITO Transistors and its Dependence on Dielectric Properties. 1-2 - Marc Jaikissoon, Jerry A. Yang, Kathryn M. Neilson, Eric Pop, Krishna C. Saraswat:
Mobility Enhancement of Monolayer MoS2 Transistors using Tensile-Stressed Silicon Nitride Capping Layers. 1-2 - Ozan Yakar, Burkay Uzlu, Daniel S. Schneider, Annika Grundmann, Sören Becker, Jan S. Niehaus, Hendrik Schlicke, Michael Heuken, Holger Kalisch, Andrei Vescan, Zhenxing Wang, Max Christian Lemme:
MoS2/Quantum Dot Hybrid Photodetectors on Flexible Substrates. 1-2 - Shun'ichiro Ohmi, Akio Ihara, Masakazu Tanuma, Jooyoung Pyo, Joong-Won Shin:
MFSFET with Ferroelectric HfN for Analog Memory Application. 1-2 - S. S. Teja Nibhanupudi, Dmitry Veksler, Anupam Roy, Matthew Coupin, Kevin C. Matthews, Jamie Warner, Gennadi Bersuker, Jaydeep P. Kulkarni, Sanjay Kumar Banerjee:
Experimental demonstration of sub-nanosecond switching in 2D hexagonal Boron Nitride resistive memory devices. 1-2 - Bao-Yuan Wang, Chin-Ya Su, Tian-Li Wu:
Demonstration of Patterned GaN RF MIS-HEMTs Growing on Hybrid Oriented Silicon-on-Insulator (SOI) Substrates. 1-2 - Ahmad Islam, Adam Miesle, M. Dietz, Kevin D. Leedy, S. Ganguli, G. Subramanyam, Weisong Wang, Nicholas Sepelak, Daniel Dryden, Stephen E. Tetlak, Kyle J. Liddy, Andrew J. Green, Kelson D. Chabak:
Thermal stability of ALD-grown SiO2 and Al2O3 on (010) β-Ga2O3 substrates. 1-2 - Chandan Joishi, Nidhin Kurian Kalarickal, Wahidur Rahman, Wu Lu, Siddharth Rajan:
Ultra-Wide Bandgap Semiconductor Transistors for mm-wave Applications. 1 - Shivendra Singh Parihar, Jun Z. Huang, Weike Wang, Kimihiko Imura, Yogesh Singh Chauhan:
Self-Heating characterization and modeling of 5nm technology node FinFETs. 1-2 - Chetan K. Dabhi, Girish Pahwa, Sayeef S. Salahuddin, Chenming Hu:
Compact Model for Trap Assisted Tunneling based GIDL. 1-2 - Shui-Qing Yu, Gregory Salamo, Wei Du, Baohua Li, Greg Sun, Richard A. Soref, Yong-Hang Zhang, Guo-En Chang:
SiGeSn Technology for All-Group-IV Photonics. 1-2 - Ying-Chen Chen, Justin Stouffer, Favian Villanueva, Jordan Beverly:
Ambient Effects on Reprogrammable Read-only Selector-free Memory for the Embedded NVM Applications. 1-2 - Sung Jin Yang, Frank Makal, Paul Peterson, Jason Alikpala, Christopher J. Luth, Sanjay Kumar Banerjee, Andreas Roessler, Deji Akinwande:
D-band frequency memristor switch based on monolayer boron nitride. 1-2 - Thomas Mikolajick, Uwe Schroeder, Stefan Slesazeck:
Unleashing the Potential of Integrated Ferroelectric Devices with Hafnium Oxide. 1-2 - Anirban Kar, Swapna Sarker, Avirup Dasgupta, Yogesh Singh Chauhan:
Impact of Corner Rounding on Quantum Confinement in GAA Nanosheet FETs for Advanced Technology Nodes. 1-2 - Md. Mazharul Islam, Shamiul Alam, Nikhil Shukla, Ahmedullah Aziz:
Design Space Analysis of Superconducting Nanowire-based Cryogenic Oscillators. 1-2 - Giulio Galderisi, Thomas Mikolajick, Jens Trommer:
Robust Reconfigurable Field Effect Transistors Process Route Enabling Multi-VT Devices Fabrication for Hardware Security Applications. 1-2 - Philip G. Neudeck, David J. Spry, Michael J. Krasowski, Liangyu Chen:
The Path Towards Realistic ASIC Electronics Deployment Into Previously Impractical Extreme Application Environments. 1-2 - Neel Chatterjee, Adam M. Weidling, Sarah L. Swisher:
Photonic Curing: Rapid Thermal Processing of Oxide Thin-film Transistors on Plastic. 1-2 - Mir Muntasir Hossain, Pratyush Pandey, Akif Aabrar, Karla González-Serrano, Ted Moise, John Rodriguez, K. R. Udayakumar, Suman Datta, Alan C. Seabaugh:
Pulsed Current-Voltage Protocol to Reveal Polarization-Continuation in Ferroelectric Memory: Implications for Partial State Storage. 1-2 - James Spencer Lundh, Hannah N. Masten, Kohei Sasaki, Alan G. Jacobs, Zhe Cheng, Joseph Spencer, Lei Chen, James C. Gallagher, Andrew D. Koehler, Keita Konishi, Samuel Graham, Akito Kuramata, Karl D. Hobart, Marko J. Tadjer:
AlN-capped P-(AlxGal-x)2O3/Ga2O3 heterostructure field-effect transistors for near-junction thermal management of next generation power devices. 1-2 - Susanne Hoffmann-Eifert:
Nanoscale HfO2-based memristive devices for neuromorphic computing. 1-2 - Sumaiya Wahid, Alwin Daus, Jimin Kwon, Shengjun Qin, Jung-Soo Ko, Krishna C. Saraswat, H.-S. Philip Wong, Eric Pop:
First Demonstration of Top-Gated ITO Transistors: Effect of Channel Passivation. 1-2 - Shamiul Alam, Md. Mazharul Islam, Md. Shafayat Hossain, Kai Ni, Vijaykrishnan Narayanan, Ahmedullah Aziz:
Cryogenic Memory Array based on Ferroelectric SQUID and Heater Cryotron. 1-2 - Raghvendra Dangi, Ahtisham Pampori, Pragya Kushwaha, Ekta Yadav, Santanu Sinha, Yogesh Singh Chauhan:
A width-scalable SPICE compact model for GaN HEMTs including self-heating effect. 1-2 - Tomohisa Miyao, Takahisa Tanaka, Itsuki Imanishi, Masayuki Ichikawa, Shuya Nakagawa, Hiroki Ishikuro, Toshitsugu Sakamoto, Munehiro Tada, Ken Uchida:
Enhanced Drain Current in Transient Mode due to Long Ionization Time of Shallow Impurities at 4 K in 65-nm bulk Cryo CMOS Transistors. 1-2 - Surila Guglani, Avirup Dasgupta, Ming-Yen Kao, Chenming Hu, Sourajeet Roy:
Artificial Neural Network Surrogate Models for Efficient Design Space Exploration of 14-nm FinFETs. 1-2 - Kexin Li, Takashi Matsuda, Eiji Yagyu, Koon Hoo Teo, Shaloo Rakheja:
Trapping Phenomena in GaN HEMTs with Fe- and C-doped Buffer. 1-2 - Bhawani Shankar, Ke Zeng, Brendan Gunning, Rafael Perez Martinez, Chuanzhe Meng, Jack Flicker, Andrew Binder, Jeramy Ray Dickerson, Robert Kaplar, Srabanti Chowdhury:
Movement of Current Filaments and its Impact on Avalanche Robustness in Vertical GaN P-N diode Under UIS stress. 1-2 - L. Panarella, Quentin Smets, Devin Verreck, Tom Schram, Daire Cott, I. Asselberghs, Ben Kaczer:
Analysis of BTI in 300 mm integrated dual-gate WS2 FETs. 1-2 - Sanghyeon Kim, Jinha Lim, Joonsup Shim, Dae-Myeong Geum:
Ge-based Mid-infrared integrated photonics platform for Sensing. 1-2 - Vishank Talesara, Yuxuan Zhang, Junao Cheng, Hongping Zhao, Wu Lu:
Breakdown Voltage Enhancement of GaN diodes with High-k Dielectric. 1-2 - Jeevesh Kumar, Mayank Shrivastava:
Are Argon and Nitrogen Gases Really Inert to Graphene Devices? 1-2 - Zheng Wang, Nujhat Tasneem, Hang Chen, Shimeng Yu, Winston Chern, Asif Islam Khan:
Improved Endurance with Electron-Only Switching in Ferroelectric Devices. 1-2
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