"First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN ..."

Eungkyun Kim et al. (2022)

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DOI: 10.1109/DRC55272.2022.9855776

access: closed

type: Conference or Workshop Paper

metadata version: 2022-08-30

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Eungkyun Kim, Zexuan Zhang, Jashan Singhal, Kazuki Nomoto, Austin Hickman, Masato Toita, Debdeep Jena, Huili Grace Xing:
First demonstration of N-polar GaN/AlGaN/AlN HEMT on Single Crystal AlN Substrates. DRC 2022: 1-2

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