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2020 – today
- 2024
[c5]Davide G. F. Lombardo, Mamidala Saketh Ram, Tommaso Stecconi, Wooseok Choi, Antonio La Porta, Donato Francesco Falcone, Bert J. Offrein, Valeria Bragaglia:
Read Noise Analysis in Analog Conductive-Metal-Oxide/HfOx ReRAM Devices. DRC 2024: 1-2- [i4]Olivier Maher, Roy Bernini, Nele Harnack, Bernd Gotsmann, Marilyne Sousa, Valeria Bragaglia, Siegfried F. Karg:
Highly Reproducible and CMOS-compatible VO2-based Oscillators for Brain-inspired Computing. CoRR abs/2403.02822 (2024) - 2023
- [c4]Donato Francesco Falcone, Stephan Menzel, Tommaso Stecconi, Antonio La Porta, Ludovico Carraria-Martinotti, Bert Jan Offrein, Valeria Bragaglia:
Physical modeling and design rules of analog Conductive Metal Oxide-HfO2 ReRAM. IMW 2023: 1-4 - [i3]Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Valeria Bragaglia, Youri Popoff, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein:
A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory. CoRR abs/2309.12051 (2023) - [i2]Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Youri Popoff, Valeria Bragaglia, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert Jan Offrein:
A BEOL Compatible, 2-Terminals, Ferroelectric Analog Non-Volatile Memory. CoRR abs/2309.12061 (2023) - 2022
- [c3]Tommaso Stecconi, Youri Popoff, Roberto Guido
, Mattia Halter, Donato Francesco Falcone, Antonio La Porta, Folkert Horst, Laura Bégon-Lours, Marilyne Sousa, Bert J. Offrein, Valeria Bragaglia:
Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states. DRC 2022: 1-2 - [c2]Tommaso Stecconi, Youri Popoff, Roberto Guido, Donato Francesco Falcone, Mattia Halter, Marilyne Sousa, Folkert Horst, Antonio La Porta, Bert J. Offrein, Valeria Bragaglia:
Role of Conductive-Metal-Oxide to HfOx, Interfacial Layer on the Switching Properties of Bilayer TaOx/HfOx ReRAM. ESSDERC 2022: 297-300 - 2021
- [c1]Laura Bégon-Lours, Mattia Halter, Diana Dávila Pineda, Valeria Bragaglia, Youri Popoff, Antonio La Porta, Daniel Jubin, Jean Fompeyrine, Bert J. Offrein:
A Back-End-Of-Line Compatible, Ferroelectric Analog Non-Volatile Memory. IMW 2021: 1-4 - 2020
- [i1]Mattia Halter, Laura Bégon-Lours, Valeria Bragaglia, Marilyne Sousa, Bert Jan Offrein, Stefan Abel, Mathieu Luisier, Jean Fompeyrine:
A back-end, CMOS compatible ferroelectric Field Effect Transistor for synaptic weights. CoRR abs/2001.06475 (2020)
Coauthor Index
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