"Towards Understanding the Physics of Gate Switching Instability in Silicon ..."

Maximilian W. Feil et al. (2023)

> Home

Details and statistics

DOI: 10.1109/IRPS48203.2023.10117740

access: closed

type: Conference or Workshop Paper

metadata version: 2024-02-05

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - conf/irps/FeilWRBASRGG23
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/conf/irps/FeilWRBASRGG23
Maximilian W. Feil, Katja Waschneck, Hans Reisinger, Judith Berens, Thomas Aichinger, Paul Salmen, Gerald Rescher, Wolfgang Gustin, Tibor Grasser:
Towards Understanding the Physics of Gate Switching Instability in Silicon Carbide MOSFETs. IRPS 2023: 1-10

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.