"Understanding and modeling transient threshold voltage instabilities in ..."

Katja Puschkarsky et al. (2018)

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DOI: 10.1109/IRPS.2018.8353560

access: closed

type: Conference or Workshop Paper

metadata version: 2019-10-19

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  - conf/irps/PuschkarskyGAGR18
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  - https://dblp.org/rec/conf/irps/PuschkarskyGAGR18
Katja Puschkarsky, Tibor Grasser, Thomas Aichinger, Wolfgang Gustin, Hans Reisinger:
Understanding and modeling transient threshold voltage instabilities in SiC MOSFETs. IRPS 2018: 3

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