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ORCIDRainer Minixhofer
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2010 – 2019
- 2015
[c3]Marko Magerl, Christian Stockreiter, Oliver Eisenberger, Rainer Minixhofer, Adrijan Baric:
Building interchangeable black-box models of integrated circuits for EMC simulations. EMC Compo 2015: 258-263- [c2]André Lange
, Ihor Harasymiv, Oliver Eisenberger, Frederic Roger, Joachim Haase, Rainer Minixhofer:
Towards probabilistic analog behavioral modeling. ISCAS 2015: 2728-2731 - 2010
- [j6]Stanislav Tyaginov, Ivan A. Starkov, Oliver Triebl, Johann Cervenka, C. Jungemann, Sara Carniello, Jong Mun Park, Hubert Enichlmair, Markus Karner, Ch. Kernstock, Ehrenfried Seebacher, Rainer Minixhofer, Hajdin Ceric, Tibor Grasser:
Interface traps density-of-states as a vital component for hot-carrier degradation modeling. Microelectron. Reliab. 50(9-11): 1267-1272 (2010)
2000 – 2009
- 2008
- [j5]Martin Schrems, Martin Knaipp, Hubert Enichlmair, Verena Vescoli, Rainer Minixhofer, Ehrenfried Seebacher, Friedrich Peter Leisenberger, Ewald Wachmann, Gregor Schatzberger, Heimo Gensinger:
Scalable High Voltage CMOS technology for Smart Power and sensor applications. Elektrotech. Informationstechnik 125(4): 109-117 (2008) - [j4]Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems:
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors. IET Circuits Devices Syst. 2(3): 347-353 (2008) - 2007
- [j3]Robert Entner, Tibor Grasser, Oliver Triebl, Hubert Enichlmair, Rainer Minixhofer:
Negative bias temperature instability modeling for high-voltage oxides at different stress temperatures. Microelectron. Reliab. 47(4-5): 697-699 (2007) - [j2]Hubert Enichlmair, Sara Carniello, Jong Mun Park, Rainer Minixhofer:
Analysis of hot carrier effects in a 0.35 µm high voltage n-channel LDMOS transistor. Microelectron. Reliab. 47(9-11): 1439-1443 (2007) - 2006
- [c1]Federico Baronti, Paolo D'Abramo, Martin Knaipp, Rainer Minixhofer, Roberto Roncella, Roberto Saletti, Martin Schrems, Riccardo Serventi, Verena Vescoli:
FlexRay transceiver in a 0.35 µm CMOS high-voltage technology. DATE Designers' Forum 2006: 201-205 - 2004
- [j1]Stefan Holzer, Rainer Minixhofer, Clemens Heitzinger, Johannes Fellner, Tibor Grasser, Siegfried Selberherr:
Extraction of material parameters based on inverse modeling of three-dimensional interconnect fusing structures. Microelectron. J. 35(10): 805-810 (2004)
Coauthor Index
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