"Hot-carrier reliability in high-voltage lateral double-diffused MOS ..."

Verena Vescoli et al. (2008)

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DOI: 10.1049/IET-CDS:20060374

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type: Journal Article

metadata version: 2020-09-10

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Verena Vescoli, Jong Mun Park, Hubert Enichlmair, Martin Knaipp, Georg Röhrer, Rainer Minixhofer, Martin Schrems:
Hot-carrier reliability in high-voltage lateral double-diffused MOS transistors. IET Circuits Devices Syst. 2(3): 347-353 (2008)

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