"Refined NBTI characterization of arbitrarily stressed PMOS devices at ..."

Thomas Aichinger, Michael Nelhiebel, Tibor Grasser (2013)

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DOI: 10.1016/J.MICROREL.2013.03.007

access: closed

type: Journal Article

metadata version: 2020-02-22

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Thomas Aichinger, Michael Nelhiebel, Tibor Grasser:
Refined NBTI characterization of arbitrarily stressed PMOS devices at ultra-low and unique temperatures. Microelectron. Reliab. 53(7): 937-946 (2013)

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