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ORCIDJuin J. Liou
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- affiliation: University of Central Florida, Orlando, USA
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2010 – 2019
- 2019
[j50]Hai-Cheng Wei
, Na Ta, Wen-Rui Hu, Ming-Xia Xiao, Xiao-Jing Tang, Bagus Haryadi, Juin J. Liou, Hsien-Tsai Wu:
Digital Volume Pulse Measured at the Fingertip as an Indicator of Diabetic Peripheral Neuropathy in the Aged and Diabetic. Entropy 21(12): 1229 (2019)- 2018
- [j49]Bagus Haryadi, Juin J. Liou, Hai-Cheng Wei, Ming-Xia Xiao, Hsien-Tsai Wu, Cheuk-Kwan Sun:
Application of multiscale Poincaré short-time computation versus multiscale entropy in analyzing fingertip photoplethysmogram amplitudes to differentiate diabetic from non-diabetic subjects. Comput. Methods Programs Biomed. 166: 115-121 (2018) - [j48]Zhaonian Yang, Yuan Yang, Ningmei Yu, Juin J. Liou:
Statically triggered 3×VDD-Tolerant ESD detection circuit in a 90-nm low-voltage CMOS process. Microelectron. J. 78: 88-93 (2018) - [j47]Chuan-Hsi Liu, Chun-Hu Cheng, Chin-Pao Cheng, Juin J. Liou:
Editorial: IEDMS 2016. Microelectron. Reliab. 83: 207 (2018) - [j46]Tao Hu, Shurong Dong, Hao Jin, Hei Wong, Zekun Xu, Xiang Li, Juin J. Liou:
A double snapback SCR ESD protection scheme for 28 nm CMOS process. Microelectron. Reliab. 84: 20-25 (2018) - 2017
- [j45]Adelmo Ortiz-Conde, Andrea Sucre-González, Fabián Zárate-Rincón, Reydezel Torres-Torres, Roberto S. Murphy-Arteaga, Juin J. Liou, Francisco J. García-Sánchez:
A review of DC extraction methods for MOSFET series resistance and mobility degradation model parameters. Microelectron. Reliab. 69: 1-16 (2017) - [j44]Fan Liu, Zhiwei Liu, Jizhi Liu, Cheng Hui, Zhao Liu, Tian Rui, Shiyu Song, Juin J. Liou:
A novel vertical SCR for ESD protection in 40 V HV bipolar process. Microelectron. Reliab. 78: 307-310 (2017) - [j43]Aihua Dong, Javier A. Salcedo, Srivatsan Parthasarathy, Yuanzhong Paul Zhou, Sirui Luo, Jean-Jacques Hajjar, Juin J. Liou:
ESD protection structure with reduced capacitance and overshoot voltage for high speed interface applications. Microelectron. Reliab. 79: 201-205 (2017) - [c9]Juin J. Liou:
Tutorial sessions: Electrostatic discharge protection of consumer electronics: Challenges and solutions. ASICON 2017: XXII-XXVI - 2016
- [j42]Weihuai Wang, Hao Jin, Wei Guo, Shurong Dong, Wei Liang, Juin J. Liou, Yan Han:
Very small snapback silicon-controlled rectifier for electrostatic discharge protection in 28 nm processing. Microelectron. Reliab. 61: 106-110 (2016) - [j41]Wei Liang, Aihua Dong, Hang Li, Meng Miao, Chung-Chen Kuo, Maxim Klebanov, Juin J. Liou:
Characteristics of ESD protection devices operated under elevated temperatures. Microelectron. Reliab. 66: 46-51 (2016) - 2015
- [j40]Meng Miao, Yuanzhong Paul Zhou, Javier A. Salcedo, Jean-Jacques Hajjar, Juin J. Liou:
Compact failure modeling for devices subject to electrostatic discharge stresses - A review pertinent to CMOS reliability simulation. Microelectron. Reliab. 55(1): 15-23 (2015) - [j39]Francisco J. García-Sánchez, Adelmo Ortiz-Conde, Juan Muci, Andrea Sucre-González, Juin J. Liou:
A unified look at the use of successive differentiation and integration in MOSFET model parameter extraction. Microelectron. Reliab. 55(2): 293-307 (2015) - [j38]Ke Gu, Juin J. Liou, Wei Li, Yang Liu, Ping Li:
Total ionizing dose sensitivity of function blocks in FRAM. Microelectron. Reliab. 55(6): 873-878 (2015) - [j37]Juin J. Liou, Chun-Chieh Lin, Chu-Hsuan Lin:
Editorial. Microelectron. Reliab. 55(11): 2173 (2015) - [j36]Yunfeng Xi, Javier A. Salcedo, Yuanzhong Paul Zhou, Juin J. Liou, Jean-Jacques Hajjar:
Design and characterization of ESD solutions with EMC robustness for automotive applications. Microelectron. Reliab. 55(11): 2236-2246 (2015) - 2014
- [j35]Qiang Cui, Srivatsan Parthasarathy, Javier A. Salcedo, Juin J. Liou, Jean-Jacques Hajjar, Yuanzhong Paul Zhou:
Design optimization of SiGe BiCMOS Silicon Controlled Rectifier for Charged Device Model (CDM) protection applications. Microelectron. Reliab. 54(1): 57-63 (2014) - 2013
- [j34]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Alberto Terán Barrios, Juin J. Liou, Ching-Sung Ho:
Revisiting MOSFET threshold voltage extraction methods. Microelectron. Reliab. 53(1): 90-104 (2013) - [j33]Yuanzhong Paul Zhou, David Ellis, Jean-Jacques Hajjar, Andrew Olney, Juin J. Liou:
vfTLP-VTH: A new method for quantifying the effectiveness of ESD protection for the CDM classification test. Microelectron. Reliab. 53(2): 196-204 (2013) - [j32]Qiang Cui, Shuyun Zhang, Juin J. Liou:
Novel ESD protection solution for single-ended mixer in GaAs pHEMT technology. Microelectron. Reliab. 53(7): 952-955 (2013) - [c8]Nan-Xiong Huang, Hsi Rong Han, Wen Tui Liao, Chih-Hung Huang, Wen Chun Wang, Miin-Shyue Shiau, Ching-Hwa Cheng, Hong-Chong Wu, Heng-Shou Hsu, Juin J. Liou, Shry-Sann Liao, Ruei-Cheng Sun, Guang-Bao Lu, Don-Gey Liu:
Integrated amorphous-Si TFT circuits for gate drivers on LCD panels. ASICON 2013: 1-4 - [c7]Juin J. Liou:
Challenges on designing electrostatic discharge protection solutions for low power electronics. ISLPED 2013: 248 - 2012
- [c6]Juin J. Liou, Chang Jiang, Feng Chia:
Electrostatic discharge (ESD) protection of RF integrated circuits. APCCAS 2012: 460-462 - 2011
- [j31]Blerina Aliaj, Vladislav A. Vashchenko, Andrei Shibkov, Juin J. Liou:
Self-protection capability of integrated NLDMOS power arrays in ESD pulse regimes. Microelectron. Reliab. 51(12): 2015-2030 (2011) - [j30]Hsien-Chin Chiu, Chia-Shih Cheng, Hsuan-Ling Kao, Jeffrey S. Fu, Qiang Cui, Juin J. Liou:
A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology. Microelectron. Reliab. 51(12): 2137-2142 (2011) - [j29]Xiang Liu, Jiann-Shiun Yuan, Juin J. Liou:
Thermal reliability of VCO using InGaP/GaAs HBTs. Microelectron. Reliab. 51(12): 2147-2152 (2011) - [c5]Juin J. Liou, Chang Jiang, Cao Guang-Biao, Chang Gung, Feng Chia:
Challenges of electrostatic discharge (ESD) protection in emerging silicon nanowire technology. ASICON 2011: 256-258 - 2010
- [j28]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Ching-Sung Ho:
Integration-based approach to evaluate the sub-threshold slope of MOSFETs. Microelectron. Reliab. 50(2): 312-315 (2010) - [j27]Xiang Liu, Jiann-Shiun Yuan, Juin J. Liou:
Electro-thermal stress effect on InGaP/GaAs heterojunction bipolar low-noise amplifier performance. Microelectron. Reliab. 50(3): 365-369 (2010) - [j26]Juin J. Liou, Chao-Sung Lai:
Editorial. Microelectron. Reliab. 50(5): 583 (2010)
2000 – 2009
- 2009
- [j25]Hei Wong, Y. Fu, Juin J. Liou, Y. Yue:
Hot-carrier reliability and breakdown characteristics of multi-finger RF MOS transistors. Microelectron. Reliab. 49(1): 13-16 (2009) - [j24]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou:
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. Microelectron. Reliab. 49(7): 689-692 (2009) - 2008
- [j23]Xiaoyang Du, Shurong Dong, Yan Han, Juin J. Liou, Mingxu Huo, You Li, Qiang Cui, Dahai Huang, Demiao Wang:
Evaluation of RF electrostatic discharge (ESD) protection in 0.18-µm CMOS technology. Microelectron. Reliab. 48(7): 995-999 (2008) - [j22]Xiang Liu, Jiann-Shiun Yuan, Juin J. Liou:
InGaP/GaAs heterojunction bipolar transistor and RF power amplifier reliability. Microelectron. Reliab. 48(8-9): 1212-1215 (2008) - [j21]You Li, Juin J. Liou, Jim Vinson:
Investigation of diode geometry and metal line pattern for robust ESD protection applications. Microelectron. Reliab. 48(10): 1660-1663 (2008) - 2007
- [j20]Y. Fu, Hei Wong, Juin J. Liou:
Characterization and modeling of flicker noise in junction field-effect transistor with source and drain trench isolation. Microelectron. Reliab. 47(1): 46-50 (2007) - [j19]You-Lin Wu, Shi-Tin Lin, Tsung-Min Chang, Juin J. Liou:
Reliability study of ultrathin oxide films subject to irradiation-then-stress treatment using conductive atomic force microscopy. Microelectron. Reliab. 47(2-3): 419-421 (2007) - 2006
- [j18]Javier A. Salcedo, Juin J. Liou, Muhammad Yaqub Afridi, Allen R. Hefner:
On-chip electrostatic discharge protection for CMOS gas sensor systems-on-a-chip (SoC). Microelectron. Reliab. 46(8): 1285-1294 (2006) - 2005
- [j17]Ching-Sung Ho, Kuo-Yin Huang, Ming Tang, Juin J. Liou:
An analytical threshold voltage model of NMOSFETs with hot-carrier induced interface charge effect. Microelectron. Reliab. 45(7-8): 1144-1149 (2005) - [c4]Javier A. Salcedo, Juin J. Liou, Muhammad Yaqub Afridi, Allen R. Hefner:
Novel electrostatic discharge protection structure for a monolithic gas sensor systems-on-a-chip. ISCAS (1) 2005: 416-419 - 2003
- [j16]Xiaofang Gao, Juin J. Liou, Joe Bernier, Gregg D. Croft, Waisum Wong, Satya Vishwanathan:
Optimization of on-chip ESD protection structures for minimal parasitic capacitance. Microelectron. Reliab. 43(5): 725-733 (2003) - 2002
- [j15]Juin J. Liou, R. Shireen, Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Antonio Cerdeira, Xiaofang Gao, Xuecheng Zou, Ching-Sung Ho:
Influence of polysilicon-gate depletion on the subthreshold behavior of submicron MOSFETs. Microelectron. Reliab. 42(3): 343-347 (2002) - [j14]Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juin J. Liou, Antonio Cerdeira, Magali Estrada, Y. Yue:
A review of recent MOSFET threshold voltage extraction methods. Microelectron. Reliab. 42(4-5): 583-596 (2002) - [j13]Juin J. Liou, Qiang Zhang, John McMacken, J. Ross Thomson, Kevin Stiles, Paul Layman:
Statistical modeling of MOS devices for parametric yield prediction. Microelectron. Reliab. 42(4-5): 787-795 (2002) - [j12]Xiaofang Gao, Juin J. Liou, Joe Bernier, Gregg D. Croft, Adelmo Ortiz-Conde:
Implementation of a comprehensive and robust MOSFET model in cadence SPICE for ESD applications. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 21(12): 1497-1502 (2002) - 2001
- [j11]Qiang Zhang, Juin J. Liou, John McMacken, J. Ross Thomson, Paul Layman:
SPICE modeling and quick estimation of MOSFET mismatch based on BSIM3 model and parametric tests. IEEE J. Solid State Circuits 36(10): 1592-1595 (2001) - [j10]F. Schwierz, Juin J. Liou:
Semiconductor devices for RF applications: evolution and current status. Microelectron. Reliab. 41(2): 145-168 (2001) - [j9]Jui-Chu Lee, R. Young, Juin J. Liou, Gregg D. Croft, Joseph C. Bernier:
An improved experimental setup for electrostatic discharge (ESD) measurements based on transmission line pulsing technique. IEEE Trans. Instrum. Meas. 50(6): 1808-1814 (2001) - [j8]Min Shen, Ming-C. Cheng, Juin J. Liou:
A Generalized Finite Element Method for Hydrodynamic Modeling of Short-channel Devices. VLSI Design 13(1-4): 79-84 (2001) - [j7]Min Shen, Wai-Kay Yip, Ming-C. Cheng, Juin J. Liou:
An Upstream Flux Splitting Method for Hydrodynamic Modeling of Deep Submicron Devices. VLSI Design 13(1-4): 329-334 (2001) - 2000
- [j6]Jim Vinson, Juin J. Liou:
Electrostatic discharge in semiconductor devices: protection techniques. Proc. IEEE 88(12): 1878-1902 (2000) - [c3]Qiang Zhang, Juin J. Liou, John McMacken, Kevin Stiles, J. Ross Thomson, Paul Layman:
An efficient and practical MOS statistical model for digital applications. ISCAS 2000: 433-436
1990 – 1999
- 1998
- [j5]Jim Vinson, Juin J. Liou:
Electrostatic discharge in semiconductor devices: an overview. Proc. IEEE 86(2): 399-420 (1998) - 1996
- [j4]Ching S. Ho, Juin J. Liou, Michael Georgiopoulos, Christos G. Christodoulou:
A Mixed Analog/Digital VLSI Design and Simulation of An Adaptive Resonance Theory (ART) Neural Network Architecture. Simul. 66(1): 31-39 (1996) - 1994
- [j3]W. W. Wong, Juin J. Liou:
JFET circuit simulation using SPICE implemented with an improved model. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 13(1): 105-109 (1994) - 1991
- [c2]Waisum Wong, Juin J. Liou, Jiann-Shiun Yuan, David M. Wu:
Statistical sensitivity simulation for integrating design and testing of MOSFET integrated circuits. VTS 1991: 104-108 - [c1]Jiann-Shiun Yuan, Juin J. Liou, David M. Wu:
Testing the impact of process defects on ECL power-delay performance. VTS 1991: 233-238 - 1990
- [j2]Jiann S. Yuan, Juin J. Liou:
An improved latching pulse design for dynamic sense amplifiers. IEEE J. Solid State Circuits 25(5): 1294-1299 (1990)
1980 – 1989
- 1988
- [j1]Juin J. Liou, Frederik A. Lindholm:
Capacitance of semiconductor p-n junction space-charge layers: an overview. Proc. IEEE 76(11): 1406-1422 (1988)
Coauthor Index
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