"Indirect fitting procedure to separate the effects of mobility degradation ..."

Adelmo Ortiz-Conde et al. (2009)

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DOI: 10.1016/J.MICROREL.2009.05.005

access: closed

type: Journal Article

metadata version: 2020-02-22

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Adelmo Ortiz-Conde, Francisco J. García-Sánchez, Juan Muci, Denise C. Lugo Muñoz, Álvaro D. Latorre Rey, Ching-Sung Ho, Juin J. Liou:
Indirect fitting procedure to separate the effects of mobility degradation and source-and-drain resistance in MOSFET parameter extraction. Microelectron. Reliab. 49(7): 689-692 (2009)

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