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ORCIDHsuan-Ling Kao
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2010 – 2019
- 2017
[j11]Hsuan-Ling Kao
, Chih-Sheng Yeh, Hsien-Chin Chiu, Cheng-Lin Cho, Chun-Hu Cheng:
A high output power and low phase noise GaN HEMT VCO with array of switchable inductors. Int. J. Circuit Theory Appl. 45(11): 1621-1636 (2017)- [j10]Hsien-Chin Chiu, Min-Li Chou, Chun-Hu Cheng, Hsuan-Ling Kao, Cheng-Lin Cho:
Effect of body bias and temperature on low-frequency noise in 40-nm nMOSFETs. Microelectron. Reliab. 78: 267-271 (2017) - 2016
- [j9]Hsien-Chin Chiu, Ji-Fan Chi, Hsuan-Ling Kao, Chia-Yi Chu, Kuan-Liang Cho, Feng-Tso Chien:
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment. Microelectron. Reliab. 59: 44-48 (2016) - 2013
- [j8]Hsien-Chin Chiu, Chao-Wei Lin, Fan-Hsiu Huang, Hsuan-Ling Kao, Feng-Tso Chien, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau:
Low frequency noise in field-plate multigate AlGaN/GaN single-pole-single-throw RF switches on silicon substrate. Microelectron. Reliab. 53(3): 405-408 (2013) - [j7]Hsien-Chin Chiu, Hsiang-Chun Wang, Chao-Wei Lin, Yi-Cheng Luo, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang:
Low gate interface traps AlGaN/GaN HEMTs using a lattice matched ZrZnO transparent gate design. Microelectron. Reliab. 53(8): 1130-1136 (2013) - [j6]Hsien-Chin Chiu, Chao-Hung Chen, Hsuan-Ling Kao, Feng-Tso Chien, Ping-Kuo Weng, Yan-Tang Gau, Hao-Wei Chuang:
Sidewall defects of AlGaN/GaN HEMTs evaluated by low frequency noise analysis. Microelectron. Reliab. 53(12): 1897-1900 (2013) - [c5]Hsuan-Ling Kao, Chih-Sheng Yeh, Cheng-Lin Cho, B. W. Wang, P. C. Lee, B. H. Wei, Hsien-Chin Chiu:
Design of an S-band 0.35 µm AlGaN/GaN LNA using cascode topology. DDECS 2013: 250-253 - 2012
- [j5]Che-Kai Lin, Hsien-Chin Chiu, Chao-Wei Lin, Hsuan-Ling Kao, Feng-Tso Chien:
Investigation on the thermal behavior of 0.15 μm gate-length In0.4Al0.6As/In0.4Ga0.6As MHEMT. Microelectron. Reliab. 52(6): 969-973 (2012) - [j4]Hsuan-Ling Kao, Chih-Sheng Yeh, Meng-Ting Chen, Hsien-Chin Chiu, Li-Chun Chang:
Characterization and reliability of nMOSFETs on flexible substrates under mechanical strain. Microelectron. Reliab. 52(6): 999-1004 (2012) - [j3]Hsien-Chin Chiu, Chao-Wei Lin, Hsuan-Ling Kao, Geng-Yen Lee, Jen-Inn Chyi, Hao-Wei Chuang, Kuo-Jen Chang, Yau-Tang Gau:
A gold-free fully copper metalized AlGaN/GaN power HEMTs on Si substrate. Microelectron. Reliab. 52(11): 2556-2560 (2012) - [c4]Hsuan-Ling Kao, S. P. Shih, Chih-Sheng Yeh, Li-Chun Chang:
A low phase noise Ka-band voltage controlled oscillator using 0.15 µm GaAs pHEMT technology. DDECS 2012: 79-82 - 2011
- [j2]Hsien-Chin Chiu, Chia-Shih Cheng, Hsuan-Ling Kao, Jeffrey S. Fu, Qiang Cui, Juin J. Liou:
A fully on-chip ESD protection UWB-band low noise amplifier using GaAs enhancement-mode dual-gate pHEMT technology. Microelectron. Reliab. 51(12): 2137-2142 (2011) - [j1]Hsien-Chin Chiu, Chao-Wei Lin, Che-Kai Lin, Hsuan-Ling Kao, Jeffrey S. Fu:
Thermal stability investigations of AlGaN/GaN HEMTs with various high work function gate metal designs. Microelectron. Reliab. 51(12): 2163-2167 (2011) - [c3]Hsuan-Ling Kao, S. P. Shih, Chih-Sheng Yeh, Chia-Ming Yang, C. Y. Ke, Y. C. Lee, Jeffrey S. Fu, Li-Chun Chang:
A Ka-band triple push coupled pair VCO using 0.18-μm CMOS technology. WOCN 2011: 1-4 - 2010
- [c2]Chia-Ming Yang, Hsuan-Ling Kao, Y. C. Chang, M. T. Chen, H. M. Chang, C. H. Wu:
A low phase noise 20 GHz voltage control oscillator using 0.18-μm CMOS technology. DDECS 2010: 185-188
2000 – 2009
- 2009
- [c1]Y. C. Chang, Hsuan-Ling Kao, C. H. Kao, C. H. Yang, Jeffrey S. Fu, Nemai C. Karmakar, Li-Chun Chang:
0.18 µm CMOS UWB LNA with new feedback configuration for optimization low noise, high gain and small area. DDECS 2009: 194-197
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