"The ESD protection characteristic and low-frequency noise analysis of GaN ..."

Hsien-Chin Chiu et al. (2016)

> Home

Details and statistics

DOI: 10.1016/J.MICROREL.2016.01.014

access: closed

type: Journal Article

metadata version: 2020-02-22

- view
  - electronic edition via DOI
  - unpaywalled version
  authority control:
- export record
  dblp key:
  - journals/mr/ChiuCKCCC16
- ask others
- share record
  persistent URL:
  - https://dblp.org/rec/journals/mr/ChiuCKCCC16
Hsien-Chin Chiu, Ji-Fan Chi, Hsuan-Ling Kao, Chia-Yi Chu, Kuan-Liang Cho, Feng-Tso Chien:
The ESD protection characteristic and low-frequency noise analysis of GaN Schottky barrier diode with fluorine-based plasma treatment. Microelectron. Reliab. 59: 44-48 (2016)

manage site settings

To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.