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ORCIDNathalie Labat
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2020 – today
- 2023
[c3]N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert:
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. IRPS 2023: 1-5
2010 – 2019
- 2018
- [c2]Kalparupa Mukherjee
, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS 2018: 4 - 2017
- [j33]Nathalie Labat, François Marc, Hélène Frémont, Marise Bafleur:
Proceedings of the 28th European Symposium on the reliability of electron devices, failure physics and analysis. Microelectron. Reliab. 76-77: 1-5 (2017) - [j32]Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectron. Reliab. 76-77: 350-356 (2017) - 2016
- [j31]H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert:
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64: 594-598 (2016) - 2015
- [j30]M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert:
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1672-1676 (2015) - [j29]Pamela Del Vecchio, Arnaud Curutchet, Yannick Deshayes, M. Bettiati, F. Laruelle, Nathalie Labat, Laurent Béchou:
Correlation between forward-reverse low-frequency noise and atypical I-V signatures in 980 nm high-power laser diodes. Microelectron. Reliab. 55(9-10): 1741-1745 (2015) - 2013
- [j28]Nathalie Labat, François Marc:
Editorial. Microelectron. Reliab. 53(9-11): 1169-1170 (2013) - [j27]W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet:
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. Microelectron. Reliab. 53(9-11): 1375-1380 (2013) - [j26]Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53(9-11): 1450-1455 (2013) - [j25]S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53(9-11): 1491-1495 (2013) - 2012
- [j24]Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux:
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52(9-10): 2184-2187 (2012) - [c1]Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert:
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC 2012: 270-273 - 2011
- [j23]Nathalie Labat, François Marc:
Editorial. Microelectron. Reliab. 51(9-11): 1423-1424 (2011) - [j22]G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Muriel Riet, Jean Godin:
Reliability of submicron InGaAs/InP DHBT under thermal and electrical stresses. Microelectron. Reliab. 51(9-11): 1730-1735 (2011) - [j21]A. Aubert, Sébastien Jacques, S. Pétremont, Nathalie Labat, Hélène Frémont:
Experimental power cycling on insulated TRIAC package: Reliability interpretation thanks to an innovative failure analysis flow. Microelectron. Reliab. 51(9-11): 1845-1849 (2011) - 2010
- [j20]Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini:
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50(9-11): 1520-1522 (2010) - [j19]G. A. Koné, Brice Grandchamp, C. Hainaut, François Marc, Cristell Maneux, Nathalie Labat, Thomas Zimmer, Virginie Nodjiadjim, Jean Godin:
Preliminary results of storage accelerated aging test on InP/InGaAs DHBT. Microelectron. Reliab. 50(9-11): 1548-1553 (2010) - [j18]A. Aubert, J. P. Rebrasse, Lionel Dantas de Morais, Nathalie Labat, Hélène Frémont:
Failure analysis case study on a Cu/low-k technology in package: New front-side approach using laser and plasma de-processing. Microelectron. Reliab. 50(9-11): 1688-1691 (2010)
2000 – 2009
- 2009
- [j17]Dean Lewis, Nathalie Labat:
Editorial. Microelectron. Reliab. 49(9-11): 935-936 (2009) - [j16]Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui:
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectron. Reliab. 49(9-11): 1216-1221 (2009) - 2008
- [j15]Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet:
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron. Reliab. 48(8-9): 1366-1369 (2008) - 2007
- [j14]Nathalie Labat, André Touboul:
Editorial. Microelectron. Reliab. 47(9-11): 1311-1312 (2007) - [j13]Mohsine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut:
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. Microelectron. Reliab. 47(9-11): 1630-1633 (2007) - [j12]Mustapha Faqir, Giovanni Verzellesi, Fausto Fantini, Francesca Danesin, Fabiana Rampazzo, Gaudenzio Meneghesso, Enrico Zanoni, Anna Cavallini, Antonio Castaldini, Nathalie Labat, André Touboul, Christian Dua:
Characterization and analysis of trap-related effects in AlGaN-GaN HEMTs. Microelectron. Reliab. 47(9-11): 1639-1642 (2007) - 2006
- [j11]A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul:
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46(9-11): 1725-1730 (2006) - 2005
- [j10]Nathalie Labat:
Editorial. Microelectron. Reliab. 45(9-11): 1275-1276 (2005) - [j9]Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez:
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectron. Reliab. 45(9-11): 1611-1616 (2005) - 2004
- [j8]Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul:
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. Microelectron. Reliab. 44(9-11): 1361-1368 (2004) - [j7]Brice Grandchamp, Cristell Maneux, Nathalie Labat, André Touboul, Thomas Zimmer:
On-wafer low frequency noise measurements of SiGe HBTs: Impact of technological improvements on 1/f noise. Microelectron. Reliab. 44(9-11): 1387-1392 (2004) - 2003
- [j6]Nathalie Labat, André Touboul:
Editorial. Microelectron. Reliab. 43(9-11): 1351-1352 (2003) - [j5]Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003) - [j4]J. C. Martin, Cristell Maneux, Nathalie Labat, André Touboul, Muriel Riet, S. Blayac, M. Kahn, Jean Godin:
1/f noise analysis of InP/InGaAs DHBTs submitted to bias and thermal stresses. Microelectron. Reliab. 43(9-11): 1725-1730 (2003) - [j3]Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove:
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectron. Reliab. 43(9-11): 1731-1736 (2003) - 2002
- [j2]Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust:
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectron. Reliab. 42(9-11): 1575-1580 (2002) - 2001
- [j1]Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut:
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectron. Reliab. 41(9-10): 1573-1578 (2001)
Coauthor Index
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