"High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and ..."

Mohamed Belhaj et al. (2003)

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DOI: 10.1016/S0026-2714(03)00334-2

access: closed

type: Journal Article

metadata version: 2021-04-15

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Mohamed Belhaj, Cristell Maneux, Nathalie Labat, André Touboul, Philippe Bove:
High current effects in InP/GaAsSb/InP DHBT: Physical mechanisms and parasitic effects. Microelectron. Reliab. 43(9-11): 1731-1736 (2003)

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