"Evidence of relationship between mechanical stress and leakage current in ..."

Benoit Lambert et al. (2012)

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DOI: 10.1016/J.MICROREL.2012.06.100

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type: Journal Article

metadata version: 2022-02-04

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Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux:
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52(9-10): 2184-2187 (2012)

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