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ORCIDFrédéric Darracq
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2020 – today
- 2023
[j7]Leonardo Heitich Brendler
, Hervé Lapuyade, Yann Deval, Frédéric Darracq, Frédéric Fauquet, Ricardo Reis, François Rivet:
A Proof-of-Concept of a Multiple-Cell Upsets Detection Method for SRAMs in Space Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 70(12): 4877-4887 (2023)
2010 – 2019
- 2018
- [c2]Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS 2018: 4 - 2017
- [j6]Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectron. Reliab. 76-77: 350-356 (2017) - 2014
- [j5]Mohamed Mehdi Rebaï, Frédéric Darracq, Jean-Paul Guillet, Elise Bernou, Kevin Sanchez, Philippe Perdu, Dean Lewis:
A comprehensive study of the application of the EOP techniques on bipolar devices. Microelectron. Reliab. 54(9-10): 2088-2092 (2014) - 2013
- [j4]Nogaye Mbaye, Vincent Pouget, Frédéric Darracq, Dean Lewis:
Characterization and modeling of laser-induced single-event burn-out in SiC power diodes. Microelectron. Reliab. 53(9-11): 1315-1319 (2013) - [j3]I. El Moukhtari, Vincent Pouget, C. Larue, Frédéric Darracq, Dean Lewis, Philippe Perdu:
Impact of negative bias temperature instability on the single-event upset threshold of a 65 nm SRAM cell. Microelectron. Reliab. 53(9-11): 1325-1328 (2013)
2000 – 2009
- 2006
- [j2]Fabien Essely, Frédéric Darracq, Vincent Pouget, Mustapha Remmach, Felix Beaudoin, Nicolas Guitard, Marise Bafleur, Philippe Perdu, André Touboul, Dean Lewis:
Application of various optical techniques for ESD defect localization. Microelectron. Reliab. 46(9-11): 1563-1568 (2006) - 2003
- [j1]Frédéric Darracq, Hervé Lapuyade, Nadine Buard, Pascal Fouillat, R. Dufayel, Thierry Carrière:
Low-cost backside laser test method to pre-characterize the COTS IC's sensitivity to Single Event Effects. Microelectron. Reliab. 43(9-11): 1615-1619 (2003) - 2001
- [c1]Dean Lewis, Hervé Lapuyade, Yann Deval, Yvan Maidon, Frédéric Darracq, Renaud Briand, Pascal Fouillat:
A New Laser System for X-Rays Flashes Sensitivity Evaluation. IOLTW 2001: 111-
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