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"Comprehensive study into underlying mechanisms of anomalous gate leakage ..."
Kalparupa Mukherjee et al. (2018)
- Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS 2018: 4
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