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ORCIDLis K. Nanver
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2020 – today
- 2021
[c14]Lovro Markovic, Tihomir Knezevic, Lis K. Nanver, Tomislav Suligoj:
Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer. MIPRO 2021: 64-69
2010 – 2019
- 2019
- [c13]Tihomir Knezevic
, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Ahmed Elsayed, Jan F. Dick, Jörg Schulze:
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C. ESSDERC 2019: 242-245 - [c12]Tihomir Knezevic, Tomislav Suligoj, Lis K. Nanver:
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. MIPRO 2019: 24-29 - [c11]Max Krakers, T. Kneevic, Lis K. Nanver:
Reverse breakdown and light-emission patterns studied in Si PureB SPADs. MIPRO 2019: 30-35 - 2018
- [c10]Lis K. Nanver:
An experimental view on PureB silicon photodiode device physics. MIPRO 2018: 1-6 - [c9]Tihomir Knezevic, Lis K. Nanver, Ivana Capan, Tomislav Suligoj:
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. MIPRO 2018: 12-17 - 2017
- [c8]Tihomir Knezevic, Lis K. Nanver, Tomislav Suligoj:
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions. MIPRO 2017: 72-76 - 2016
- [c7]Vishal Agarwal, Anne-Johan Annema, Satadal Dutta, Raymond J. E. Hueting, Lis K. Nanver, Bram Nauta:
Random Telegraph Signal phenomena in avalanche mode diodes: Application to SPADs. ESSDERC 2016: 264-267 - 2013
- [c6]Giulia Piccolo, Amir Sammak, Raymond J. E. Hueting, Jurriaan Schmitz, Lis K. Nanver:
Role of junction depth in light emission from silicon p-i-n leds. ESSDERC 2013: 119-122 - [c5]Negin Golshani, Vahid Mohammadi, Siva Ramesh, Lis K. Nanver:
High-ohmic resistors using nanometer-thin pure-boron chemical-vapour-deposited layers. ESSDERC 2013: 210-213 - 2012
- [j7]Lei Shi, Stoyan N. Nihtianov, Sha Xia, Lis K. Nanver, Alexander Gottwald, Frank Scholze:
Electrical and Optical Performance Investigation of Si-Based Ultrashallow-Junction p+-n VUV/EUV Photodiodes. IEEE Trans. Instrum. Meas. 61(5): 1268-1277 (2012) - [c4]Agata Sakic, Lin Qi, Tom L. M. Scholtes, Johan van der Cingel, Lis K. Nanver:
Epitaxial growth of large-area p+n diodes at 400 ºC by Aluminum-Induced Crystallization. ESSDERC 2012: 145-148 - [c3]Lei Shi, Stoyan N. Nihtianov, Frank Scholze, Lis K. Nanver:
Electrical performance stability characterization of high-sensitivity Si-based EUV photodiodes in a harsh industrial application. IECON 2012: 3952-3957 - [c2]Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver:
Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions. MIPRO 2012: 36-41 - 2011
- [c1]Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver:
Optimization of the perimeter doping of ultrashallow p+-n--n+ photodiodes. MIPRO 2011: 44-48
2000 – 2009
- 2009
- [j6]Lis K. Nanver, Hugo Schellevis, Tom L. M. Scholtes, Luigi La Spina, Gianpaolo Lorito, Francesco Sarubbi, Viktor Gonda, Milos Popadic, Koen Buisman, Leo C. N. de Vreede, Cong Huang, Silvana Milosavljevic, Egbert J. G. Goudena:
Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling. IEEE J. Solid State Circuits 44(9): 2322-2338 (2009) - 2006
- [j5]W. C. Edmund Neo, Yu Lin, Xiaodong Liu, Leo C. N. de Vreede, Lawrence E. Larson, Marco Spirito, Marco J. Pelk, Koen Buisman, Atef Akhnoukh, Anton de Graauw, Lis K. Nanver:
Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks. IEEE J. Solid State Circuits 41(9): 2166-2176 (2006) - 2005
- [j4]Nebojsa Nenadovic, V. Cuoco, S. J. C. H. Theeuwen, Lis K. Nanver, Hugo Schellevis, G. Spierings, H. F. F. Jos, J. W. Slotboom:
Electrothermal characterization of silicon-on-glass VDMOSFETs. Microelectron. Reliab. 45(3-4): 541-550 (2005) - 2004
- [j3]Nebojsa Nenadovic, Slobodan Mijalkovic, Lis K. Nanver, Lode K. J. Vandamme, Vincenzo d'Alessandro, Hugo Schellevis, Jan W. Slotboom:
Extraction and modeling of self-heating and mutual thermal coupling impedance of bipolar transistors. IEEE J. Solid State Circuits 39(10): 1764-1772 (2004) - 2003
- [j2]Marco Spirito, Leo C. N. de Vreede, Lis K. Nanver, Stephan Weber, Joachim N. Burghartz:
Power amplifier PAE and ruggedness optimization by second-harmonic control. IEEE J. Solid State Circuits 38(9): 1575-1583 (2003) - 2001
- [j1]Wibo D. van Noort, Leo C. N. de Vreede, H. F. F. Jos, Lis K. Nanver, Jan W. Slotboom:
Reduction of UHF power transistor distortion with a nonuniform collector doping profile. IEEE J. Solid State Circuits 36(9): 1399-1406 (2001)
Coauthor Index
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