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ORCIDTomislav Suligoj
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2020 – today
- 2024
[c50]Ivan Berdalovic, Dario Novakovic, Tomislav Suligoj:
Performance Limitations of GaN HEMTs with Quaternary InAlGaN and ScAlGaN Barrier Layers. BCICTS 2024: 9-12- [c49]Filip Bogdanovic, Lovro Markovic, Azra Tabakovic, Josip Zilak, Marko Koricic, Tomislav Suligoj:
The Effect of Base Doping Profile on Horizontal Current Bipolar Transistor's (HCBT) Beta Recovery at Cryogenic Temperatures. BCICTS 2024: 282-285 - [c48]Dario Novakovic, Ivan Berdalovic, Tomislav Suligoj:
Impact of Buffer Al-Content on 2DEG Mobility and Scattering Mechanisms in Double-Heterostructure GaN HEMTs. MIPRO 2024: 1590-1595 - [c47]Borna Pozar, Ivan Berdalovic, P. Bartulovic, M. Jugovic, Tomislav Suligoj:
Temperature-Dependent Noise Performance of Single-Photon Avalanche Diodes and Active Quenching Circuits in 180-nm HV CMOS. MIPRO 2024: 1619-1624 - [c46]Filip Bogdanovic, Azra Tabakovic, Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Two Port Scattering Parameters Measurements and De-Embedding in Cryostat from 300 K down to 20 K. MIPRO 2024: 1665-1670 - 2023
- [c45]Ivan Berdalovic, Mirko Poljak
, Tomislav Suligoj:
Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance. BCICTS 2023: 314-317 - 2022
- [c44]Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj:
Numerical Optimization of On-Resistance and Transconductance in Depletion-Mode and Enhancement-Mode GaN HEMTs. BCICTS 2022: 29-32 - [c43]Borna Pozar, Ivan Berdalovic, Filip Bogdanovic, Lovro Markovic, Tomislav Suligoj:
Layout-Dependent Noise Performance of Single-Photon Avalanche Diodes in 180 nm High-Voltage CMOS Technology. MIPRO 2022: 133-138 - 2021
- [c42]Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj:
Comparison of Transport Properties in Enhancement-mode GaN HEMT Structures Using an Advanced Modeling Framework. BCICTS 2021: 1-4 - [c41]Josip Zilak, Zeljko Osrecki, Marko Koricic, Filip Bogdanovic, Tomislav Suligoj:
Potential of High-Voltage Single-Emitter RESURF Horizontal Current Bipolar Transistor for RF Circuits. BCICTS 2021: 1-4 - [c40]Filip Bogdanovic, Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Comparison of Discrete Bipolar Transistors and MOSFETs for High-Speed Switching Application. MIPRO 2021: 22-27 - [c39]Lovro Markovic, Tihomir Knezevic, Lis K. Nanver, Tomislav Suligoj:
Modeling and Simulation Study of Electrical Properties of Ge-on-Si Diodes with Nanometer-thin PureGaB Layer. MIPRO 2021: 64-69 - [c38]Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj:
Modelling of Electrostatics and Transport in GaN-Based HEMTs under Non-Equilibrium Conditions. MIPRO 2021: 74-79 - 2020
- [c37]Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Impact of Large-signal Operation on DC Operating Point of Horizontal Current Bipolar Transistor. BCICTS 2020: 1-4 - [c36]Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj:
On the modelling of interface roughness scattering in AlGaN/GaN heterostructures. MIPRO 2020: 22-27 - [c35]Lovro Markovic, Tihomir Knezevic, Tomislav Suligoj:
Modeling of Electrical Properties of Al-on-Ge-on-Si Schottky Barrier Diode. MIPRO 2020: 28-33 - [c34]Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Doherty Power Amplifier in Horizontal Current Bipolar Transistor (HCBT) Technology. MIPRO 2020: 62-66
2010 – 2019
- 2019
- [c33]Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Analysis of Horizontal Current Bipolar Transistor (HCBT) Characteristics for RF Power Amplifiers. BCICTS 2019: 1-4 - [c32]Tihomir Knezevic, Tomislav Suligoj, Xingyu Liu, Lis K. Nanver, Ahmed Elsayed, Jan F. Dick, Jörg Schulze:
Back-end-of-line CMOS-compatible diode fabrication with pure boron deposition down to 50 °C. ESSDERC 2019: 242-245 - [c31]Tihomir Knezevic, Tomislav Suligoj, Lis K. Nanver:
Impact of ultra-thin-layer material parameters on the suppression of carrier injection in rectifying junctions formed by interfacial charge layers. MIPRO 2019: 24-29 - [c30]Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Balanced RF Power Amplifier Design in Horizontal Current Bipolar Transistor (HCBT) Technology. MIPRO 2019: 70-75 - 2018
- [c29]Josip Zilak, Marko Koricic, Zeljko Osrecki, Marko Simic, Tomislav Suligoj:
Noise Figure Characterization of Horizontal Current Bipolar Transistor (HCBT). BCICTS 2018: 186-189 - [c28]Tihomir Knezevic, Lis K. Nanver, Ivana Capan, Tomislav Suligoj:
Non-linear behavior of Al-contacted pure amorphous boron (PureB) devices at low temperatures. MIPRO 2018: 12-17 - [c27]Filip Segmanovic, Frederic Roger, Gerald Meinhardt, Ingrid Jonak-Auer, Tomislav Suligoj:
Impact of TCAD model parameters on optical and electrical characteristics of radiation-hard photodiode in 0.35bm CMOS technology. MIPRO 2018: 18-22 - [c26]Marko Koricic, Josip Zilak, Zeljko Osrecki, Tomislav Suligoj:
Analysis of tunable BVCEO in horizontal current bipolar transistor with floating field plates. MIPRO 2018: 66-71 - [c25]Zeljko Osrecki, Josip Zilak, Marko Koricic, Tomislav Suligoj:
Large-signal characterization of horizontal current bipolar transistor (HCBT) by load-pull measurements. MIPRO 2018: 72-77 - [c24]Filip Segmanovic, Frederic Roger, Gerald Meinhard, Ingrid Jonak-Auer, Tomislav Suligoj:
Optical and Electrical Simulations of Radiation-Hard Photodiode in 0.35μM High-Voltage CMOS Technology. PATMOS 2018: 92-96 - 2017
- [c23]Sabina Krivec, Mirko Poljak, Tomislav Suligoj:
Band-structure of ultra-thin InGaAs channels: Impact of biaxial strain and thickness scaling. MIPRO 2017: 66-71 - [c22]Tihomir Knezevic, Lis K. Nanver, Tomislav Suligoj:
Perimeter effects from interfaces in ultra-thin layers deposited on nanometer-deep p+n silicon junctions. MIPRO 2017: 72-76 - [c21]Josip Zilak, Marko Koricic, Tomislav Suligoj:
Analysis of hot carrier-induced degradation of Horizontal Current Bipolar Transistor (HCBT). MIPRO 2017: 77-82 - [c20]Marko Koricic, Josip Zilak, Tomislav Suligoj:
Impact of the local p-well substrate parameters on the electrical performance of the Double-Emitter Reduced-Surface-Field Horizontal Current Bipolar Transistor. MIPRO 2017: 83-87 - 2016
- [c19]Tihomir Knezevic, Tomislav Suligoj:
Analysis of electrical and optical characteristics of InP/InGaAs avalanche photodiodes in linear regime by a new simulation environment. MIPRO 2016: 28-33 - [c18]Ivan Berdalovic, Zeljko Osrecki, Filip Segmanovic, Dragan Grubisic, Tihomir Knezevic, Tomislav Suligoj:
Design of passive-quenching active-reset circuit with adjustable hold-off time for single-photon avalanche diodes. MIPRO 2016: 34-39 - [c17]Josip Zilak, Marko Koricic, Hidenori Mochizuki, So-ichi Morita, Tomislav Suligoj:
Impact of the emitter polysilicon thickness on the performance of high-linearity mixers with horizontal current bipolar transistors. MIPRO 2016: 40-44 - [c16]Marko Koricic, Josip Zilak, Hidenori Mochizuki, So-ichi Morita, Tomislav Suligoj:
Fully-integrated voltage controlled oscillator in low-cost HCBT technology. MIPRO 2016: 45-50 - 2015
- [c15]Sabina Krivec, Mirko Poljak, Tomislav Suligoj:
Impact of different gate insulator materials on the electron mobility in ultra-thin (100) InGaAs-on-insulator MOS devices. MIPRO 2015: 25-30 - [c14]Marko Koricic, Josip Zilak, Tomislav Suligoj:
Impact of the emitter length scaling on electrical characteristics of horizontal current bipolar transistor with single polysilicon region. MIPRO 2015: 31-36 - [c13]Ivica Janekovic, Tihomir Knezevic, Tomislav Suligoj, Dragan Grubisic:
Optimization of floating guard ring parameters in separate-absorption-and-multiplication silicon avalanche photodiode structure. MIPRO 2015: 37-41 - 2014
- [c12]Mirko Poljak, Minsheng Wang, Sanja Zonja, Vedran Derek, Mile Ivanda, Kang L. Wang, Tomislav Suligoj:
Impact of microstrip width and annealing time on the characteristics of micro-scale graphene FETs. MIPRO 2014: 27-32 - [c11]Vedran Ivanie, Mirko Poljak, Tomislav Suligoj:
Phonon-limited hole mobility in sub-20 nm-thick double-gate germanium MOSFETs. MIPRO 2014: 39-44 - [c10]Sabina Krivec, H. Prgic, Mirko Poljak, Tomislav Suligoj:
Comparison of RF performance between 20 nm-gate bulk and SOI FinFET. MIPRO 2014: 45-50 - 2012
- [c9]Mirko Poljak, Emil B. Song, Minsheng Wang, Tomislav Suligoj, Kang L. Wang:
Effects of disorder on transport properties of extremely scaled graphene nanoribbons. ESSDERC 2012: 298-301 - [c8]Sanja Zonja, Miroslav Ocko, Mile Ivanda, Tomislav Suligoj, Petar Biljanovic:
On the application of boron and phosphorus heavily doped LPCVD polycrystalline silicon thin films as thermoelectric materials. MIPRO 2012: 19-20 - [c7]Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver:
Modelling of electrical characteristics of ultrashallow pure amorphous boron p+n junctions. MIPRO 2012: 36-41 - [c6]Josip Zilak, Marko Koricic, Tomislav Suligoj:
Impact of bipolar transistor parameters on the characteristics of the double-balanced mixer. MIPRO 2012: 91-96 - 2011
- [c5]Sanja Zonja, Mile Ivanda, Miroslav Ocko, Tomislav Suligoj, Marko Koricic, Petar Biljanovic:
Structural and electronic properties of heavily phosphorus doped polycrystalline silicon thin films. MIPRO 2011: 33-38 - [c4]Marko Koricic, Tomislav Suligoj, Hidenori Mochizuki, So-ichi Morita, Katsumi Shinomura, Hisaya Imai:
Impact of the collector region fabrication on electrical characteristics of HCBT structures in 180 nm BiCMOS technology. MIPRO 2011: 39-43 - [c3]Tihomir Knezevic, Tomislav Suligoj, Agata Sakic, Lis K. Nanver:
Optimization of the perimeter doping of ultrashallow p+-n--n+ photodiodes. MIPRO 2011: 44-48 - [c2]Mirko Poljak, Vladimir Jovanovic, Tomislav Suligoj:
Physics-based modeling of hole mobility in ultrathin-body silicon-on-insulator MOSFETs. MIPRO 2011: 49-54
2000 – 2009
- 2002
- [c1]Tomislav Suligoj, Marko Koricic, Petar Biljanovic:
High-frequency analysis of SOI lateral bipolar transistor (LBT) structure for RF analog applications. ICECS 2002: 1191-1194
Coauthor Index
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