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ORCIDBCICTS 2023: Monterey, CA, USA
- IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium, BCICTS 2023, Monterey, CA, USA, October 16-18, 2023. IEEE 2023, ISBN 979-8-3503-0764-1
- Thomas Kazior, Sharon Woodruff, Gregory Jones, Iskren Abdomerovic:
3D Heterogeneous Integration (3DHI): An Enabler For Next Generation RF Systems. 1-4 - Shahriar Shahramian, Mustafa Sayginer, Michael J. Holyoak, Mohamed Elkhouly, Mike Zierdt, Jaegeun Ha, Joe Weiner, Yves Baeyens:
Practical Approaches to Industrializing Near-THz Communication Systems. 5-8 - Bin Li, Andre G. Metzger, Cristian Cismaru, Yingying Yang:
A Novel Base Resistance Model Incorporating Base Distributive Effects Along with Emitter Length. 9-11 - Markus Müller, Mario Krattenmacher, Hendrik Leenders, Sara Hamzeloui
, Colombo R. Bolognesi, Christoph Jungemann, Michael Schröter:
Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation. 12-15 - Hans Rohdin, Bart Jansen, William Snodgrass, J. Stephen Kofol, Sonja Nedeljkovic, Ziad El Chami, William Sutton, Tom Dungan:
Practical and Efficient Approaches to Device Modeling and Power Amplifier Module Design. 16-23 - Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers. 24-27 - Alexander Meyer, Peter Toth, Axel Engelhardt, Jens Repp, Matthias Brandl, Vadim Issakov:
A 12 Bit R-2R Digital-to-Analog Converter for Shuttling Operation in a Trapped-Ion Quantum Computer. 28-31 - Hanh-Phuc Le, Casey Hardy, Hieu Minh Pham, Mohamed Mehdi Jatlaoui, Frederic Voiron, Patrick P. Mercier, Po-Han Chen, Saket Jha:
Vertical Power Delivery and Heterogeneous Integration for High-Performance Computing. 32-35 - Sorin P. Voinigescu, Shai Bonen, Suyash Pati Tripathi, Saurabh Bagchi, Gregory Cooke, T. Jager, Akash Bharadwaj, Jessica Zhao:
A Circuit Designer's Perspective on Transistor Modelling Challenges for 6G, Fiberoptics, and Quantum Computing ICs. 36-43 - Thomas Zimmer, Sébastien Fregonese, Anjan Chakravorty:
Electro-Thermal Investigation of SiGe HBTs: A Review. 44-49 - Beng Woon Lim, Ajay Raman, Saurabh Sirohi:
Simulation of DC Safe Operating Area and RF Breakdown in SiGe PA HBT. 50-53 - Rachid Hamani, João Roberto Raposo de Oliveira Martins, Hagen Wald, Joerg Gessner, Michaelina Ong Ing Ing:
A Physically-Based Matching Model for HiSIM_HV. 54-57 - Akin Akturk, Ayushman Tripathi, Mehdi Saligane:
Cryogenic Modeling for Open-Source Process Design Kit Technology. 58-65 - Kathleen Muhonen, Jayashree Jayabalan, Scott Parker:
Flipchip Characterization for RF SOI Switch Model Improvement. 66-69 - Dongyang Yan, Yang Zhang, Dries Peumans, Mark Ingels, Piet Wambacq:
A 33 dBm, >30% PAE GaN Power Amplifier Based on a Sub-Quarter-Wavelength Balun for 5G Applications. 70-73 - Michael Litchfield, Andrew Kingswood:
A 4-18 GHz, 35 W GaN MMIC Power Amplifier with Improved Thermal Performance. 74-77 - Simon Mok, Norman Chiang, Vivian Law, James J. Sowers:
Fully Qualified Gallium Nitride Power Amplifier for Use in Ka-Band Commercial Space Applications. 78-81 - David J. Niven, Simon J. Mahon, Andrew J. Jones, Melissa C. Gorman:
Transient Field-Plate Thermometry in Cascode FET Power Amplifiers. 82-85 - Senne Gielen, Yang Zhang, Mark Ingels, Patrick Reynaert:
A Compact 0.98 THz Source With On-Chip Antenna In 250-nm InP DHBT. 86-89 - Venkata Vanukuru, Hari Kakara, Santosh Gedela, Vaibhav Ruparelia, Prateek Kumar Sharma:
Analog/mmWave Circuit Demonstrations in State-of-the-Art SiGe BiCMOS Process for 5G and Optical Transceivers. 90-93 - Amirreza Alizadeh, Utku Soylu, Navneet Sharma, Gary Xu, Mark J. W. Rodwell:
D-Band Power Amplifier with 27 dBm Peak Output Power and 14.9% PAE in 250-nm InP HBT Technology. 94-97 - Olga Krylova, Jan Schopfel, Klaus Aufinger, Nils Pohl:
A High Linearity SiGe D-Band Diode Ring Mixer. 98-101 - Batuhan Sutbas, Mohamed Hussein Eissa, Gerhard Kahmen:
A Ka-Band VCO Chip with Integrated Dividers Using 1.5 V Supply in 130-nm SiGe BiCMOS Technology for Low-Power Radar Sensors. 102-105 - Damla Dimlioglu, Alyosha C. Molnar:
Demonstration of a Ku-Band N-Path Downconverter in GaN-on-SiC. 106-109 - Farooq Amin, Shuai Zhou, Long Huang, Christopher Latorre, Folu Popoola, Parrish Ralston:
Gen1 Active Tunable SiGe Integrated Parallel Synthesis Filters (PSF) without Q-Enhancement. 110-113 - Hari Vemuri, Armagan Dascurcu, Kexin Li, Harish Krishnaswamy:
Wideband Switched-Capacitor and Switched-Transmission-line Circulators in 40nm GaN Technology: Design and Device Modeling. 114-117 - Dan Denninghoff, F. Erdem Arkun, Jeong-Sun Moon, Haidang Tran, Andrea L. Corrion, Georges Siddiqi, David Fanning, Micha Fireman, J. Tai, Joel Wong, Bob Grabar, C. Dao, Ivan Milosavljevic, Ryan Tran, Ariel Getter, Andrew Clapper, S. Dadafshar, Jana Georgieva, Harris Moyer, Nicholas C. Miller, Michael Elliott, Ryan Gilbert:
Adaptable 40 nm GaN T-Gate MMIC Processes for Millimeter-Wave Applications. 118-123 - Rob D. Jones, Jerome Cheron, Bryan T. L. Bosworth, Benjamin F. Jamroz, Dylan F. Williams, Miguel E. Urteaga, Ari D. Feldman, Peter H. Aaen:
Microstrip and Grounded CPW Calibration Kit Comparison for On-Wafer Transistor Characterization from 220 GHz to 325 GHz. 124-127 - Mohamadali Malakoutian, Srabanti Chowdhury:
On Extracting the Maximum Power Density at High Frequencies from Gallium Nitride and Related Materials. 128-131 - Joseph Casamento, Kazuki Nomoto, Thai-Son Nguyen, Hyunjea Lee, Chandrasekhar Savant, Lei Li, Austin Hickman, Takuya Maeda, Yu-Tsun Shao, Jimy Encomendero, Ved Gund, Timothy Vasen, Shamima Afroz, Daniel J. Hannan, David A. Muller, Huili Grace Xing, Debdeep Jena:
AlScN High Electron Mobility Transistors: Integrating High Piezoelectric, High K Dielectric, and Ferroelectric Functionality. 132-136 - Bernhard Grote, Bruce Green, C. Gaw, Y. Wei, D. Hill, Philippe Renaud, J. Wan, C. Rampley, David Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, Humayun Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, Patrick Hu:
High Performance 0.25µm GaN Technology with Low Memory Effects. 137-140 - David Fanning, Andrea L. Corrion, Georges Siddiqi, Souheil Nadri, Dan Denninghoff, F. Erdem Arkun, Sadaf Dadafshar, Ignacio Ramos, Harris Moyer, Andy Fu, John Carlson, Shyam Bharadwaj:
Millimeter-Wave Gallium Nitride Maturation of 40nm T3 Gallium Nitride Monolithic Microwave Integrated Circuit Process. 141-144 - Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi:
Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz. 145-148 - Romain Hersent, Filipe Jorge, Fabrice Blache, Bernadette Duval, Michel Goix, Haïk Mardoyan, Sylvain Almonacil, M. Xu, Y. Zhu, L. Chen, Z. Hu, Jeremie Renaudier, Muriel Riet, Agnieszka Konczykowska, Bertrand Ardouin:
100 GBaud DSP-Free PAM-4 Optical Signal Generation Using an InP-DHBT AMUX-Driver and a Thin-Film Lithium Niobate Modulator Assembly. 149-152 - Guy Torfs, Bart Moeneclaey, Joris Lambrecht, Cedric Bruynsteen, Jakob Declercq, Shengpu Niu, Nishant Singh, Marijn Verbeke, Xin Yin, Peter Ossieur, Johan Bauwelinck:
High-Speed SiGe BiCMOS Circuits for Optical Communication. 153-158 - Hiroshi Uemura, Taichi Misawa, Naoki Itabashi, Munetaka Kurokawa, Yoshiyuki Sugimoto, Seiji Kumagai, Masaru Takechi, Keiji Tanaka:
A 19-dB Peaking at 72-GHz and 4.1-Vppd Output Swing SiGe BiCMOS Linear Driver with Dynamic Cascode Output Buffer. 159-162 - Seiji Kumagai, Yoshiyuki Sugimoto, Hiroshi Uemura, Munetaka Kurokawa, Naoki Itabashi, Masaru Takechi, Takuya Okimoto, Keiji Tanaka:
A Shunt-Feedback TIA with Common-Base Variable Gain Input Stage for 128-GBaud Coherent Communication. 163-166 - Prateek Kumar Sharma, Vaibhav Ruparelia, Saurabh Sirohi, Uppili S. Raghunathan, Venkat Vanukuru, Vibhor Jain:
Design Trade-offs between Series-Peaking Inductor and High $f_T$ SiGe HBTs in Transimpedance Amplifiers. 167-170 - Justin J. Kim, Wonho Lee, James F. Buckwalter:
A 12-162 GHz Distributed Amplifier in a 45-nm BiCMOS SOI Process Achieving 2.67 THz Gain-Bandwidth Using an Active Bias Termination. 171-174 - Michael Litchfield:
A 15-24 GHz, 15W Reactively Matched GaN MMIC Power Amplifier. 175-178 - Jeff Shih-Chieh Chien, Eythan Lam, James F. Buckwalter:
An 18.6-dBm, 8-Way-Combined D-Band Power Amplifier with 21.6% PAE in 22-nm FD-SOI CMOS. 179-182 - Toshihide Kuwabara, Naoki Oshima, Koki Tanji, Noriaki Tawa, Shinji Hachiyama, Tomoya Kaneko:
D-Band 4-ch Antenna-on-Chip Phased-Array TX Front-End. 183-186 - A. Gauthier, E. Brezza, A. Montagné, N. Guitard, J. Azevedo Goncalves, Michel Buczko, S. Jan, N. Derrier, Didier Céli, C. Deglise-Favre, J. Ma, H. Audouin, F. Deprat, I D. Ristoiu, L. Berthier, L. Clément, B. Grelaud, C. Rougier, Pascal Chevalier:
Low-Noise Si/SiGe HBT for LEO Satellite User Terminals in Ku-Ka Bands. 187-190 - Mohammed Iftekhar, Harshan Gowda, Pascal Kneuper, Babak Sadiye, Wolfgang Mueller, Johann-Christoph Scheytt:
A 28-Gb/s 27.2mW NRZ Full-Rate Bang-Bang Clock and Data Recovery in 22 nm FD-SOI CMOS Technology. 191-194 - Teruo Jyo, Munehiko Nagatani, Miwa Mutoh, Yuta Shiratori, Hitoshi Wakita, Hiroyuki Takahashi:
A DC-to-150-GHz InP-DHBT Active Combiner Module for Ultra-Broadband Signal Generation. 195-198 - Jianan Zhao, Sorin P. Voinigescu:
An 80-GBaud PAM-4 $G_{\mathrm{m}}$ -Boosted Variable-Gain TIA in 22-nm FDSOI. 199-202 - Shuvadip Ghosh, Hao Li, Nils Pohl:
Low Phase Noise and Low Power Consumption Magnetic Cross-Coupled Push-Push VCO in SiGe BiCMOS Technology. 203-206 - Hitoshi Wakita, Teruo Jyo, Munehiko Nagatani, Hiroyuki Takahashi:
Quad-Channel 100-GHz-Bandwidth InP- HBT-Based Linear Amplifier Module for High Symbol Rate Communications. 207-210 - Anthony Romano, Timothy Sonnenberg, Zoya Popovic:
46-102 GHz GaN Balanced Cascode Amplifier-Isolator. 211-214 - Omar Hassan, Mir H. Mahmud, Abdulrahman A. Alhamed, Gabriel M. Rebeiz:
A Wideband Ultra-Low Noise 15-55 GHz Dual-Beam Receive Phased-Array Beamformer with 2.9-4.2 dB NF. 215-218 - Axel Tessmann, Arnulf Leuther, Fabian Thome, Laurenz John, Bersant Gashi, Hermann Massler, Alexander Saam, Sébastien Chartier:
Advanced mHEMT Technologies for Use in Radar, Communication and Meteorological Applications. 219-224 - M. El Kaamouchi, A. Gasmi, Bartosz Wróblewski, Rémy Leblanc, J. Poulain, P. Altuntas:
GaN/Si 37-40 GHz T/R Chip MMIC for 5G Communications. 225-228 - Nethini Weerathunge, Simon J. Mahon, Gerry McCulloch, Sudipta Chakraborty:
120 GHz GaAs Single-Balanced Mixer. 229-232 - Justin Romstadt, Tobias Welling, Florian Vogelsang, Muhammed Ali Yildirim, Klaus Aufinger, Nils Pohl:
A 377-416 GHz Push-Push Frequency Doubler with Driving Stage and Transformer-Based Mode Separation in SiGe BiCMOS. 233-236 - Melika Dedovic, Florian Vogelsang, Hakan Papurcu, Klaus Aufinger, Nils Pohl:
A 61-187.2-GHz Traveling Wave Push-Push Frequency Doubler in a 130 nm SiGe:C BiCMOS Technology With 101.7% Fractional Bandwidth. 237-240 - Shinji Hachiyama, Koki Tanji, Toshihide Kuwabara, Naoki Oshima, Kazuaki Kunihiro, Tomoya Kaneko:
A D-Band Sub-Harmonically Pumped Mixer with High LO Suppression Using 250-nm InP DHBT P-N Junction. 241-244 - Dimitris P. Ioannou, Ephrem G. Gebreselasie, Vinh Pham, Uppili S. Raghunathan:
Electrostatic Discharge Stress Effects on the Performance and Reliability of High Performance NPN SiGe HBTs. 245-248 - Christoph Weimer, Viktor Kazantsev, Markus Mäller, Michael Schröter:
Numerical Device Simulation Aided Study of RF-Stress-Caused Degradation in SiGe HBTs. 249-252 - Harrison P. Lee, Nelson Sepúlveda-Ramos, Jeffrey W. Teng, Jackson P. Moody, Delgermaa Nergui, Brett L. Ringel, Zachary R. Brumbach, Alizeh Premani, Uppili S. Raghunathan, Vibhor Jain, John D. Cressler:
The Effects of Carbon Doping on the Performance and Electrical Reliability of SiGe HBTs. 253-256 - Mike Peters, David A. Britz, Miao-Chun Chen, Manish Hemkar, Andy Lo:
High Volume Wafer Fab Equipment for RF Technologies. 257-262 - Ted Letavic, Massimo Sorbara, Ken Geiwont, Yusheng Bian, Vihbor Jain, Sameer Jain, Koushik Ramachandran, Zhuo-Jie Wu, Brittany Hedrick, Kevin K. Dezfulian, Yarong Lin, Teck Jung Tang, Thomas Houghton, Daniel Fisher, Takako Hirokawa, Monica Esopi, Vaishnavi Karra, Won Suk Lee, Michelle Zhang, Ryan Sporer, Jorge Lubguban, Jae Kyu Cho, Rongtao Cao, Hanyi Ding, Sujith Chandran, Michal Rakowski, Abdelsalam Aboketaf, Subramanian Krishnamurthy, Scott Mills, Norman Robson, Ian Melville, Robert Fox, Vikas Gupta, Anthony Yu:
Monolithic Silicon Photonics. 263-269 - Jackson P. Moody, Jeffrey W. Teng, John D. Cressler:
The Impact of BEOL Stress on SiGe HBTs at Cryogenic Temperatures. 270-273 - John D. Cressler:
The SiGe HBT at Cryogenic Temperatures: Invited Pager. 274-279 - Utku Soylu, Amirreza Alizadeh, Munkyo Seo, Ahmed S. H. Ahmed, Mark J. W. Rodwell:
A 202 GHz Link Using Planar Transceiver Modules. 280-283 - Laurenz John, Thomas Merkle, Arnulf Leuther, Jaehoon Chung:
Multi-Channel PA, LNA, and Switch MMICs for Beam-Switching Applications at 160 GHz, Based on an InGaAs mHEMT Technology. 284-287 - Cristina Maurette-Blasini, Rainer Weber, Sandrine Wagner, Dirk Schwantuschke, Sébastien Chartier, Rüdiger Quay:
Single-Ended Resistive Down-Converter MMICs in InGaAs mHEMT and GaN-HEMT Technologies for D-Band (110-170 GHz) Applications. 288-291 - Ethan Chou, Hesham Beshary, Meng Wei, Rami Hijab, Farhana Sheikh, Steven Callender, Ali M. Niknejad:
Comparative Performance of 100-200 GHz Wideband Transceivers: CMOS vs Compound Semiconductors. 292-299 - Anthony E. Parker, Simon J. Mahon:
GaN and GaAs HEMT Channel Charge Model for Nonlinear Microwave and RF Applications. 300-303 - Marvin Marbell, Yueying Liu, Michelle Tran, Haedong Jang, Mehdi Hasan, Dan Etter, Dan Namishia, Dan Stasiw, Jeremy Fisher, Scott T. Sheppard, Basim Noori:
Modeling and Simulation of Discrete Silicon Carbide Integrated Passive Devices in High-Power RF Amplifiers. 304-309 - Arman Ur Rashid, Britt Brooks, Steven Manz, Daniel J. Lichtenwalner, Sei-Hyung Ryu:
Modeling of the Snappy, and Soft Reverse Recovery of SiC MOSFET's Body Diode. 310-313 - Ivan Berdalovic, Mirko Poljak, Tomislav Suligoj:
Optimization of GaN HEMTs with ScAlN Barrier for High 2DEG Density and Low on-Resistance. 314-317
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