"High Performance 0.25µm GaN Technology with Low Memory Effects."

Bernhard Grote et al. (2023)

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DOI: 10.1109/BCICTS54660.2023.10310678

access: closed

type: Conference or Workshop Paper

metadata version: 2024-11-28

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Bernhard Grote, Bruce Green, C. Gaw, Y. Wei, D. Hill, Philippe Renaud, J. Wan, C. Rampley, David Burdeaux, K. Foxx, M. Vadipour, D. Currier, C. Zhu, Humayun Kabir, T. Arnold, H. Stewart, D. Ferguson, J. Higginbottom, Patrick Hu:
High Performance 0.25µm GaN Technology with Low Memory Effects. BCICTS 2023: 137-140

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