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2020 – today
- 2024
[c12]Rimjhim Chaudhary, Akshay M. Arabhavi, Sara Hamzeloui, Martin Leich, Olivier Ostinelli, Colombo R. Bolognesi:
Type-II GaInAsSb/InP Modified Uni-Traveling Carrier Photodiodes Under Zero-Bias Operation. OFC 2024: 1-3- 2023
- [j3]C. Mukherjee
, Djeber Guendouz, Marina Deng, H. Bertin, Antoine Bobin, Nicolas Vaissiere, Christophe Caillaud, Akshay M. Arabhavi, Rimjhim Chaudhary, Olivier Ostinelli, Colombo R. Bolognesi, Patrick Mounaix, Cristell Maneux:
SPICE Modeling in Verilog-A for Photo-Response in UTC-Photodiodes Targeting Beyond-5G Circuit Design. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 42(9): 3045-3052 (2023) - [c11]Markus Müller, Mario Krattenmacher, Hendrik Leenders, Sara Hamzeloui, Colombo R. Bolognesi, Christoph Jungemann, Michael Schröter:
Physics-Based Compact Modeling of the Transfer Current in III-V DHBTs with the Generalized Integral Charge Control Relation. BCICTS 2023: 12-15 - [c10]Filippo Ciabattini, Akshay M. Arabhavi, Sara Hamzeloui, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
Thermal Characterization of InP/GaAsSb DHBTs: Effect of Emitter and Collector Layers. BCICTS 2023: 24-27 - [c9]Sara Hamzeloui, Akshay M. Arabhavi, Filippo Ciabattini, Mojtaba Ebrahimi, Markus Müller, Olivier Ostinelli, Michael Schröter, Colombo R. Bolognesi:
Multi-Finger 250-nm InP/GaAsSb DHBTs with Record 37.3 % Class-A PAE at 94 GHz. BCICTS 2023: 145-148 - [c8]Lars Horvath, Fran Kostelac, Derek Houtz, Mike Schwank, Colombo R. Bolognesi:
Passive Microwave C-Band Radiometer Prototype for UAV Applications. IGARSS 2023: 4792-4795 - [c7]Rimjhim Chaudhary, Akshay M. Arabhavi, Laurenz Kulmer, Sara Hamzeloui, Marco Eppenberger, Martin Leich, Olivier Ostinelli, Juerg Leuthold, Colombo R. Bolognesi:
High-Power Performance of Type-II GaInAsSb/InP Uniform Absorber Uni-Traveling Carrier Photodiodes. OFC 2023: 1-3 - 2022
- [c6]Sara Hamzeloui, Filippo Ciabattini, Akshay M. Arabhavi, W. Quan, Diego Marti, Mojtaba Ebrahimi, Olivier Ostinelli, Colombo R. Bolognesi:
Highly-Linear InP/GaAsSb DHBTs with 18.2 dBm OIP3 at 45 GHz: Comparison of Common-Base and Common-Emitter Structures. BCICTS 2022: 108-111 - [c5]Colombo R. Bolognesi, Akshay M. Arabhavi, Romain Hersent, Sara Hamzeloui, Filipe Jorge, X. Wen, Muriel Riet, Mathieu Luisier, Virginie Nodjiadjim, Filippo Ciabattini, Colin Mismer, Olivier Ostinelli, Agnieszka Konczykowska:
InP/GaAsSb DHBTs: THz Analog Performance and Record 180-Gb/s 5.5Vppd-Swing PAM-4 DAC-Driver. BCICTS 2022: 112-119
2010 – 2019
- 2019
- [c4]Wei Quan, Akshay M. Arabhavi, Diego Marti, Sara Hamzeloui, Olivier Ostinelli, Colombo R. Bolognesi:
InP/GaAsSb DHBT Power Performance with 30% Class-A PAE at 94 GHz. BCICTS 2019: 1-4 - [c3]Diego C. Ruiz, Tamara Saranovac, Daxin Han, Olivier Ostinelli, Colombo R. Bolognesi:
New GaInAs/InAs/InP Composite Channels for mm-Wave Low-Noise InP HEMTs. BCICTS 2019: 1-4 - 2018
- [c2]Wei Quan, Akshay M. Arabhavi, R. Flueckiger, Olivier Ostinelli, Colombo R. Bolognesi:
Iterative De-Embedding and Extracted Maximum Oscillation Frequency fMAX in mm-Wave InP DHBTs: Impact of Device Dimensions on Extraction Errors. BCICTS 2018: 110-113 - [c1]Akshay M. Arabhavi, Wei Quan, Olivier Ostinelli, Colombo R. Bolognesi:
Scaling of InP/GaAsSb DHBTs: A Simultaneous fT/fMAX=463/829GHz in a 10µm Long Emitter. BCICTS 2018: 132-135 - 2017
- [j2]Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer:
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - 2012
- [j1]Valeria Teppati, Colombo R. Bolognesi:
Evaluation and Reduction of Calibration Residual Uncertainty in Load-Pull Measurements at Millimeter-Wave Frequencies. IEEE Trans. Instrum. Meas. 61(3): 817-822 (2012)
Coauthor Index
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