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ORCIDBernd Heinemann
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2020 – today
- 2022
[j13]Thomas Bücher
, Janusz Grzyb, Philipp Hillger, Holger Rücker, Bernd Heinemann, Ullrich R. Pfeiffer:
A Broadband 300 GHz Power Amplifier in a 130 nm SiGe BiCMOS Technology for Communication Applications. IEEE J. Solid State Circuits 57(7): 2024-2034 (2022)- [j12]Bernd Heinemann:
Durch Veränderung führen: Warum IT-Projekte ein kommunikatives Change-Management brauchen. Wirtschaftsinformatik Manag. 14(6): 389-390 (2022) - 2021
- [c20]Thomas Bücher, Janusz Grzyb, Philipp Hillger, Holger Rücker, Bernd Heinemann, Ullrich R. Pfeiffer:
A 239-298 GHz Power Amplifier in an Advanced 130 nm SiGe BiCMOS Technology for Communications Applications. ESSCIRC 2021: 369-372 - 2020
- [j11]Yaxin Zhang, Wenfeng Liang, Xiaodi Jin, Mario Krattenmacher, Sophia Falk, Paulius Sakalas, Bernd Heinemann, Michael Schröter:
3.2-mW Ultra-Low-Power 173-207-GHz Amplifier With 130-nm SiGe HBTs Operating in Saturation. IEEE J. Solid State Circuits 55(6): 1471-1481 (2020)
2010 – 2019
- 2019
- [c19]Holger Rücker, Bernd Heinemann:
Device Architectures for High-speed SiGe HBTs. BCICTS 2019: 1-7 - [c18]Pedro Rodríguez-Vázquez, Janusz Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer:
Optimization and Performance Limits of a 64-QAM Wireless Communication Link at 220-260 GHz in a SiGe HBT Technology. RWS 2019: 1-3 - 2018
- [j10]Philipp Hillger, Ritesh Jain, Janusz Grzyb, Wolfgang Forster, Bernd Heinemann, Gaetan MacGrogan, Patrick Mounaix, Thomas Zimmer, Ullrich R. Pfeiffer:
A 128-Pixel System-on-a-Chip for Real-Time Super-Resolution Terahertz Near-Field Imaging. IEEE J. Solid State Circuits 53(12): 3599-3612 (2018) - [c17]Pascal Chevalier, Wolfgang Liebl, Holger Rücker, Alexis Gauthier, Dirk Manger, Bernd Heinemann, Grégory Avenier, Josef Böck:
SiGe BiCMOS Current Status and Future Trends in Europe. BCICTS 2018: 64-71 - [c16]Philipp Hillger, Ritesh Jain, Janusz Grzyb, Laven Mavarani, Bernd Heinemann, Gaetan MacGrogan, Patrick Mounaix, Thomas Zimmer, Ullrich R. Pfeiffer:
A 128-pixel 0.56THz sensing array for real-time near-field imaging in 0.13μm SiGe BiCMOS. ISSCC 2018: 418-420 - [c15]Pedro Rodríguez-Vázquez, Janusz Grzyb, Neelanjan Sarmah, Bernd Heinemann, Ullrich R. Pfeiffer:
A 65 Gbps QPSK one meter wireless link operating at a 225-255 GHz tunable carrier in a SiGe HBT technology. RWS 2018: 146-149 - 2017
- [j9]Pascal Chevalier, Michael Schröter, Colombo R. Bolognesi, Vincenzo d'Alessandro, Maria Alexandrova, Josef Böck, Ralf Flickiger, Sébastien Fregonese, Bernd Heinemann, Christoph Jungemann, Rickard Lovblom, Cristell Maneux, Olivier Ostinelli, Andreas Pawlak, Niccolò Rinaldi, Holger Rücker, Gerald Wedel, Thomas Zimmer:
Si/SiGe: C and InP/GaAsSb Heterojunction Bipolar Transistors for THz Applications. Proc. IEEE 105(6): 1035-1050 (2017) - [j8]Michael Schröter, Tommy Rosenbaum, Pascal Chevalier, Bernd Heinemann, Sorin P. Voinigescu, Ed Preisler, Josef Böck, Anindya Mukherjee:
SiGe HBT Technology: Future Trends and TCAD-Based Roadmap. Proc. IEEE 105(6): 1068-1086 (2017) - [c14]Pedro Rodríguez-Vázquez, Janusz Grzyb, Neelanjan Sarmah, Ullrich R. Pfeiffer, Bernd Heinemann:
Towards THz high data-rate communication: a 50 Gbps all-electronic wireless link at 240 GHz. NANOCOM 2017: 25:1-25:2 - 2016
- [j7]Janusz Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer:
A 0.55 THz Near-Field Sensor With a µm-Range Lateral Resolution Fully Integrated in 130 nm SiGe BiCMOS. IEEE J. Solid State Circuits 51(12): 3063-3077 (2016) - [c13]Janusz Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer:
25.1 A fully integrated 0.55THz near-field sensor with a lateral resolution down to 8µm in 0.13µm SiGe BiCMOS. ISSCC 2016: 424-425 - 2014
- [j6]Ullrich R. Pfeiffer, Yan Zhao, Janusz Grzyb, Richard Al Hadi, Neelanjan Sarmah, Wolfgang Forster, Holger Rücker, Bernd Heinemann:
A 0.53 THz Reconfigurable Source Module With Up to 1 mW Radiated Power for Diffuse Illumination in Terahertz Imaging Applications. IEEE J. Solid State Circuits 49(12): 2938-2950 (2014) - [c12]Ullrich R. Pfeiffer, Yan Zhao, Janus Grzyb, Richard Al Hadi, Neelanjan Sarmah, Wolfgang Forster, Holger Rücker, Bernd Heinemann:
14.5 A 0.53THz reconfigurable source array with up to 1mW radiated power for terahertz imaging applications in 0.13μm SiGe BiCMOS. ISSCC 2014: 256-257 - [c11]Dieter Knoll, Stefan Lischke, Lars Zimmermann, Bernd Heinemann, Daniel Micusík, P. Ostrovskyy, Georg Winzer, Marcel Kroh, Rainer Barth, Thomas Grabolla, K. Schulz, Mirko Fraschke, Marco Lisker, Jürgen Drews, Andreas Trusch, A. Kruger, Steffen Marschmeyer, Harald H. Richter, O. Fursenko, Yuji Yamamoto, Benjamin Wohlfeil, Klaus Petermann, Andreas Beling, Q. Zhou, Bernd Tillack:
Monolithically integrated 25Gbit/sec receiver for 1.55µm in photonic BiCMOS technology. OFC 2014: 1-3 - 2013
- [j5]Richard Al Hadi, Janus Grzyb, Bernd Heinemann, Ullrich R. Pfeiffer:
A Terahertz Detector Array in a SiGe HBT Technology. IEEE J. Solid State Circuits 48(9): 2002-2010 (2013) - 2012
- [c10]Holger Rücker, Bernd Heinemann:
SiGe BiCMOS technology for mm-wave systems. ISOCC 2012: 266-268 - 2011
- [c9]Erik Öjefors, Janus Grzyb, Yan Zhao, Bernd Heinemann, Bernd Tillack, Ullrich R. Pfeiffer:
A 820GHz SiGe chipset for terahertz active imaging applications. ISSCC 2011: 224-226 - 2010
- [j4]Klaus Schmalz, Wolfgang Winkler, Johannes Borngräber, Wojciech Debski, Bernd Heinemann, Christoph Scheytt:
A Subharmonic Receiver in SiGe Technology for 122 ~ GHz Sensor Applications. IEEE J. Solid State Circuits 45(9): 1644-1656 (2010) - [j3]Holger Rücker, Bernd Heinemann, Wolfgang Winkler, Rainer Barth, Johannes Borngräber, Jürgen Drews, Gerhard G. Fischer, Alexander Fox, Thomas Grabolla, Ulrich Haak, Dieter Knoll, Falk Korndörfer, Andreas Mai, Steffen Marschmeyer, Peter Schley, Detlef Schmidt, J. Schmidt, Markus Andreas Schubert, K. Schulz, Bernd Tillack, Dirk Wolansky, Yuji Yamamoto:
A 0.13 µm SiGe BiCMOS Technology Featuring fT/fmax of 240/330 GHz and Gate Delays Below 3 ps. IEEE J. Solid State Circuits 45(9): 1678-1686 (2010)
2000 – 2009
- 2009
- [c8]Stefaan Decoutere, Stefaan Van Huylenbroeck, Bernd Heinemann, Alexander Fox, Pascal Chevalier, Alain Chantre, Thomas F. Meister, Klaus Aufinger, Michael Schröter:
Pushing the speed limits of SiGe: C HBTs up to 0.5 Terahertz. CICC 2009: 347-354 - [c7]Wolfgang Winkler, Wojciech Debski, Bernd Heinemann, Falk Korndörfer, Holger Rücker, Klaus Schmalz, Christoph Scheytt, Bernd Tillack:
122 GHz low-noise-amplifier in sige technology. ESSCIRC 2009: 316-319 - 2006
- [c6]Samiran Halder, Sabbir A. Osmany, Hans Gustat, Bernd Heinemann:
A 10GS/s 2Vpp emitter follower only track and hold amplifier in SiGe BiCMOS technology. ISCAS 2006 - 2005
- [c5]Yevgen Borokhovych, Hans Gustat, Bernd Tillack, Bernd Heinemann, Yuan Lu, Wei-Min Lance Kuo, Xiangtao Li, Ramkumar Krithivasan, John D. Cressler:
A low-power, 10GS/s track-and-hold amplifier in SiGe BiCMOS technology. ESSCIRC 2005: 263-266 - 2004
- [c4]Wolfgang Winkler, Johannes Borngräber, Bernd Heinemann:
LC-oscillators above 100 GHz in silicon-based technology. ESSCIRC 2004: 131-134 - 2001
- [j2]Roland Sorge, Bernd Heinemann:
Recombination current measurements in the space charge region of MOS field-induced pn junctions. Microelectron. Reliab. 41(6): 789-795 (2001)
1990 – 1999
- 1999
- [j1]Mario Netzel, Bernd Heinemann, Maik Brett, Dagmar Schipanski:
Methods for generating and editing merged isotropic/anisotropic triangular-element meshes. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 18(11): 1566-1576 (1999) - [c3]Wolfgang Winkler, Johannes Borngräber, Heide Erzgraeber, Ha. Erzgraber, Bernd Heinemann, Dieter Knoll, H. Jörg Osten, Michael Pierschel, Klaus Pressel, Peter Schley:
Wireless communication integrated circuits with CMOS-compatible SiGe HBT technology modules. CICC 1999: 351-358
1980 – 1989
- 1982
- [c2]Bernd Heinemann:
Comments on I. Futo, T. Gergely. International Working Conference on Model Realism 1982: 47-48 - 1981
- [c1]Bernd Heinemann:
Subclasses of Self-Modifying Nets. Selected Papers from the First and the Second European Workshop on Application and Theory of Petri Nets 1981: 187-192
Coauthor Index
aka: Janusz Grzyb
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