"A 0.13 µm SiGe BiCMOS Technology Featuring ..."

Holger Rücker et al. (2010)

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DOI: 10.1109/JSSC.2010.2051475

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type: Journal Article

metadata version: 2023-09-30

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Holger Rücker, Bernd Heinemann, Wolfgang Winkler, Rainer Barth, Johannes Borngräber, Jürgen Drews, Gerhard G. Fischer, Alexander Fox, Thomas Grabolla, Ulrich Haak, Dieter Knoll, Falk Korndörfer, Andreas Mai, Steffen Marschmeyer, Peter Schley, Detlef Schmidt, J. Schmidt, Markus Andreas Schubert, K. Schulz, Bernd Tillack, Dirk Wolansky, Yuji Yamamoto:
A 0.13 µm SiGe BiCMOS Technology Featuring f_T/f_max of 240/330 GHz and Gate Delays Below 3 ps. IEEE J. Solid State Circuits 45(9): 1678-1686 (2010)

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