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ORCIDLeo C. N. de Vreede
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2020 – today
- 2024
[j23]Mohammad Ali Montazerolghaem
, Leo C. N. de Vreede, Masoud Babaie:
A Highly Selective Receiver With Programmable Zeros and Second-Order TIA. IEEE J. Solid State Circuits 59(6): 1668-1683 (2024)- [j22]Masoud Pashaeifar, Anil Kumar Kumaran, Leo C. N. de Vreede, Morteza S. Alavi:
A Chain-Weaver Balanced Power Amplifier With an Embedded Impedance/Power Sensor. IEEE J. Solid State Circuits 59(12): 3938-3951 (2024) - [c19]Yizhuo Wu, Gagan Deep Singh, Mohammadreza Beikmirza, Leo C. N. de Vreede, Morteza S. Alavi, Chang Gao:
OpenDPD: An Open-Source End-to-End Learning & Benchmarking Framework for Wideband Power Amplifier Modeling and Digital Pre-Distortion. ISCAS 2024: 1-5 - [c18]Masoud Pashaeifar, Anil Kumar Kumaran, Leo C. N. de Vreede, Morteza S. Alavi:
32.7 A 25.2dBm PSAT, 35-to-43GHz VSWR-Resilient Chain-Weaver Eight-Way Balanced PA with an Embedded Impedance/Power Sensor. ISSCC 2024: 532-534 - [i3]Yizhuo Wu, Gagan Deep Singh, Mohammadreza Beikmirza, Leo C. N. de Vreede, Morteza S. Alavi, Chang Gao:
OpenDPD: An Open-Source End-to-End Learning & Benchmarking Framework for Wideband Power Amplifier Modeling and Digital Pre-Distortion. CoRR abs/2401.08318 (2024) - [i2]Yizhuo Wu, Ang Li, Mohammadreza Beikmirza, Gagan Deep Singh, Qinyu Chen, Leo C. N. de Vreede, Morteza S. Alavi, Chang Gao:
MP-DPD: Low-Complexity Mixed-Precision Neural Networks for Energy-Efficient Digital Predistortion of Wideband Power Amplifiers. CoRR abs/2404.15364 (2024) - [i1]Ang Li, Haolin Wu, Yizhuo Wu, Qinyu Chen, Leo C. N. de Vreede, Chang Gao:
DPD-NeuralEngine: A 22-nm 6.6-TOPS/W/mm2 Recurrent Neural Network Accelerator for Wideband Power Amplifier Digital Pre-Distortion. CoRR abs/2410.11766 (2024) - 2023
- [j21]Mohammadreza Beikmirza, Yiyu Shen, Leo C. N. de Vreede, Morteza S. Alavi:
A Wideband Energy-Efficient Multi-Mode CMOS Digital Transmitter. IEEE J. Solid State Circuits 58(3): 677-690 (2023) - [j20]Mohammad Ali Montazerolghaem, Leo C. N. de Vreede, Masoud Babaie:
A Highly Linear Receiver Using Parallel Preselect Filter for 5G Microcell Base Station Applications. IEEE J. Solid State Circuits 58(8): 2157-2172 (2023) - [j19]Yiyu Shen, Martijn Hoogelander, Rob Bootsman, Morteza S. Alavi, Leo C. N. de Vreede:
A Wideband Digital-Intensive Current-Mode Transmitter Line-Up. IEEE J. Solid State Circuits 58(9): 2489-2500 (2023) - [c17]Mohammad Ali Montazerolghaem, Leo C. N. de Vreede, Masoud Babaie:
A 300MHz-BW, 27-to-38dBm In-Band OIP3 sub-7GHz Receiver for 5G Local Area Base Station Applications. ISSCC 2023: 292-293 - 2022
- [j18]Mohsen Mortazavi, Yiyu Shen, Dieuwert P. N. Mul, Leo C. N. de Vreede, Marco Spirito, Masoud Babaie:
A Four-Way Series Doherty Digital Polar Transmitter at mm-Wave Frequencies. IEEE J. Solid State Circuits 57(3): 803-817 (2022) - [j17]Yiyu Shen, Rob Bootsman, Morteza S. Alavi, Leo C. N. de Vreede:
A Wideband IQ-Mapping Direct-Digital RF Modulator for 5G Transmitters. IEEE J. Solid State Circuits 57(5): 1446-1456 (2022) - [j16]Masoud Pashaeifar, Leo C. N. de Vreede, Morteza S. Alavi:
A Millimeter-Wave CMOS Series-Doherty Power Amplifier With Post-Silicon Inter-Stage Passive Validation. IEEE J. Solid State Circuits 57(10): 2999-3013 (2022) - [c16]Mohammadreza Beikmirza, Yiyu Shen, Leo C. N. de Vreede, Morteza S. Alavi:
A 1-to-4GHz Multi-Mode Digital Transmitter in 40nm CMOS Supporting 200MHz 1024-QAM OFDM signals with more than 23dBm/66% Peak Power/Drain Efficiency. CICC 2022: 1-2 - [c15]Muhammad Ali Montazerolghaem, Leo C. N. de Vreede, Masoud Babaie:
A 0.5-3GHz Receiver with a Parallel Preselect Filter Achieving 120dB/dec Channel Selectivity and +28dBm Out-of-Band IIP3. CICC 2022: 11-12 - [c14]Anil Kumar Kumaran, Hossein Mashad Nemati, Leo C. N. de Vreede, Morteza S. Alavi:
Compact N-Way Doherty Power Combiners for mm-wave 5G Transmitters. ISCAS 2022: 438-442 - 2021
- [j15]Mohammadreza Beikmirza, Yiyu Shen, Leo C. N. de Vreede, Morteza S. Alavi:
A Wideband Four-Way Doherty Bits-In RF-Out CMOS Transmitter. IEEE J. Solid State Circuits 56(12): 3768-3783 (2021) - [j14]Masoud Pashaeifar, Leo C. N. de Vreede, Morteza S. Alavi:
A Millimeter-Wave Mutual-Coupling-Resilient Double-Quadrature Transmitter for 5G Applications. IEEE J. Solid State Circuits 56(12): 3784-3798 (2021) - [c13]Masoud Pashaeifar, Anil Kumar Kumaran, Mohammadreza Beikmirza, Leo C. N. de Vreede, Morteza S. Alavi:
A 24-to-32GHz series-Doherty PA with two-step impedance inverting power combiner achieving 20.4dBm Psat and 38%/34% PAE at Psat/6dB PBO for 5G applications. A-SSCC 2021: 1-3 - [c12]Mohsen Mortazavi, Yiyu Shen, Dieuwert P. N. Mul, Leo C. N. de Vreede, Marco Spirito, Masoud Babaie:
A 30GHz 4-way Series Doherty Digital Polar Transmitter Achieving 18% Drain Efficiency and -27.6dB EVM while Transmitting 300MHz 64-QAM OFDM Signal. CICC 2021: 1-2 - [c11]Anil Kumar Kumaran, Masoud Pashaeifar, Marco D'Avino, Leo C. N. de Vreede, Morteza S. Alavi:
On-Chip Output Stage Design for a Continuous Class-F Power Amplifier. ISCAS 2021: 1-5 - [c10]Jun Feng, Mohammadreza Beikmirza, Mohammadreza Mehrpoo, Leo C. N. de Vreede, Morteza S. Alavi:
A Versatile and Efficient 0.1-to-11 Gb/s CML Transmitter in 40-nm CMOS. ISOCC 2021: 41-42 - [c9]Mohammadreza Beikmirza, Yiyu Shen, Mohammadreza Mehrpoo, Mohsen Hashemi, Dieuwert P. N. Mul, Leo C. N. de Vreede, Morteza S. Alavi:
6.2 A 4-Way Doherty Digital Transmitter Featuring 50%-LO Signed IQ Interleave Upconversion with more than 27dBm Peak Power and 40% Drain Efficiency at 10dB Power Back-Off Operating in the 5GHz Band. ISSCC 2021: 92-94 - [c8]Mohammad Ali Montazerolghaem, Sergio Pires, Leo C. N. de Vreede, Masoud Babaie:
6.5 A 3dB-NF 160MHz-RF-BW Blocker-Tolerant Receiver with Third-Order Filtering for 5G NR Applications. ISSCC 2021: 98-100 - [c7]Masoud Pashaeifar, Leo C. N. de Vreede, Morteza S. Alavi:
A 24-to-30GHz Double-Quadrature Direct-Upconversion Transmitter with Mutual-Coupling-Resilient Series-Doherty Balanced PA for 5G MIMO Arrays. ISSCC 2021: 223-225 - 2020
- [c6]Yiyu Shen, Rob Bootsman, Morteza S. Alavi, Leonardus de Vreede:
A 0.5-3 GHz I/Q Interleaved Direct-Digital RF Modulator with up to 320 MHz Modulation Bandwidth in 40 nm CMOS. CICC 2020: 1-4
2010 – 2019
- 2018
- [j13]Mohammadreza Mehrpoo, Mohsen Hashemi, Yiyu Shen, Leo C. N. de Vreede, Morteza S. Alavi:
A Wideband Linear I/Q-Interleaving DDRM. IEEE J. Solid State Circuits 53(5): 1361-1373 (2018) - 2017
- [j12]Mohsen Hashemi, Yiyu Shen, Mohammadreza Mehrpoo, Morteza S. Alavi, Leo C. N. de Vreede:
An Intrinsically Linear Wideband Polar Digital Power Amplifier. IEEE J. Solid State Circuits 52(12): 3312-3328 (2017) - [c5]Mohsen Hashemi, Yiyu Shen, Mohammadreza Mehrpoo, Mustafa Acar, Rene van Leuken, Morteza S. Alavi, Leonardus de Vreede:
17.5 An intrinsically linear wideband digital polar PA featuring AM-AM and AM-PM corrections through nonlinear sizing, overdrive-voltage control, and multiphase RF clocking. ISSCC 2017: 300-301 - 2016
- [j11]Emil otev, Cong Huang, Leo C. N. de Vreede, John R. Long, Wouter A. Serdijn, Chris J. M. Verhoeven:
Out-of-Band Immunity to Interference of Single-Ended Baseband Amplifiers Through IM2 Cancellation. IEEE Trans. Circuits Syst. I Regul. Pap. 63-I(11): 1785-1793 (2016) - 2015
- [j10]Leo C. N. de Vreede, Mustafa Acar, David A. Calvillo-Cortes, Mark P. van der Heijden, Rosbin Wesson, Michel de Langen, Jawad Qureshi:
Outphasing transmitters, enabling digital-like amplifier operation with high efficiency and spectral purity. IEEE Commun. Mag. 53(4): 216-225 (2015) - 2014
- [c4]David A. Calvillo-Cortes, Leo C. N. de Vreede:
Analysis of pure- and mixed-mode class-B outphasing amplifiers. LASCAS 2014: 1-4 - 2011
- [c3]Morteza S. Alavi, Akshay Visweswaran, Robert Bogdan Staszewski, Leo C. N. de Vreede, John R. Long, Atef Akhnoukh:
A 2-GHz digital I/Q modulator in 65-nm CMOS. A-SSCC 2011: 277-280 - [c2]David A. Calvillo-Cortes, Mustafa Acar, Mark P. van der Heijden, Melina Apostolidou, Leo C. N. de Vreede, Domine Leenaerts, Jan Sonsky:
A 65nm CMOS pulse-width-controlled driver with 8Vpp output voltage for switch-mode RF PAs up to 3.6GHz. ISSCC 2011: 58-60
2000 – 2009
- 2009
- [j9]Lis K. Nanver, Hugo Schellevis, Tom L. M. Scholtes, Luigi La Spina, Gianpaolo Lorito, Francesco Sarubbi, Viktor Gonda, Milos Popadic, Koen Buisman, Leo C. N. de Vreede, Cong Huang, Silvana Milosavljevic, Egbert J. G. Goudena:
Improved RF Devices for Future Adaptive Wireless Systems Using Two-Sided Contacting and AlN Cooling. IEEE J. Solid State Circuits 44(9): 2322-2338 (2009) - [c1]José Gabriel Macias-Montero, H. Yan, Atef Akhnoukh, Leo C. N. de Vreede, John R. Long, José María López-Villegas, John J. Pekarik:
A 19GHz, 250pJ/bit non-linear BPSK demodulator in 90nm CMOS. ESSCIRC 2009: 304-307 - 2006
- [j8]W. C. Edmund Neo, Yu Lin, Xiaodong Liu, Leo C. N. de Vreede, Lawrence E. Larson, Marco Spirito, Marco J. Pelk, Koen Buisman, Atef Akhnoukh, Anton de Graauw, Lis K. Nanver:
Adaptive Multi-Band Multi-Mode Power Amplifier Using Integrated Varactor-Based Tunable Matching Networks. IEEE J. Solid State Circuits 41(9): 2166-2176 (2006) - 2004
- [j7]Mark P. van der Heijden, Leo C. N. de Vreede, Joachim N. Burghartz:
On the design of unilateral dual-loop feedback low-noise amplifiers with simultaneous noise, impedance, and IIP3 match. IEEE J. Solid State Circuits 39(10): 1727-1736 (2004) - 2003
- [j6]Marco Spirito, Leo C. N. de Vreede, Lis K. Nanver, Stephan Weber, Joachim N. Burghartz:
Power amplifier PAE and ruggedness optimization by second-harmonic control. IEEE J. Solid State Circuits 38(9): 1575-1583 (2003) - 2002
- [j5]Mark P. van der Heijden, Henk C. de Graaff, Leo C. N. de Vreede:
A novel frequency-independent third-order intermodulation distortion cancellation technique for BJT amplifiers. IEEE J. Solid State Circuits 37(9): 1176-1183 (2002) - 2001
- [j4]Wibo D. van Noort, Leo C. N. de Vreede, H. F. F. Jos, Lis K. Nanver, Jan W. Slotboom:
Reduction of UHF power transistor distortion with a nonuniform collector doping profile. IEEE J. Solid State Circuits 36(9): 1399-1406 (2001)
1990 – 1999
- 1999
- [j3]Leo C. N. de Vreede, Henk C. de Graaff, Joost A. Willemen, Wibo D. van Noort, Rik Jos, Lawrence E. Larson, Jan W. Slotboom, Joseph L. Tauritz:
Bipolar transistor epilayer design using the MAIDS mixed-level simulator. IEEE J. Solid State Circuits 34(9): 1331-1338 (1999) - 1996
- [j2]Leo C. N. de Vreede, Henk C. de Graaff, Koen Mouthaan, Marinus de Kok, Joseph L. Tauritz, Roel G. F. Baets:
Advanced modeling of distortion effects in bipolar transistors using the Mextram model. IEEE J. Solid State Circuits 31(1): 114-121 (1996) - 1994
- [j1]Leo C. N. de Vreede, Henk C. de Graaff, G. A. M. Hurkx, Joseph L. Tauritz, Roel G. F. Baets:
A figure of merit for the high-frequency noise behavior of bipolar transistors. IEEE J. Solid State Circuits 29(10): 1220-1226 (1994)
Coauthor Index
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