"Epitaxial growth of large-area p+n diodes at 400 ºC by ..."

Agata Sakic et al. (2012)

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DOI: 10.1109/ESSDERC.2012.6343354

access: closed

type: Conference or Workshop Paper

metadata version: 2017-05-19

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Agata Sakic, Lin Qi, Tom L. M. Scholtes, Johan van der Cingel, Lis K. Nanver:
Epitaxial growth of large-area p⁺n diodes at 400 ºC by Aluminum-Induced Crystallization. ESSDERC 2012: 145-148

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