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ORCIDNicolas Nolhier
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2020 – today
- 2021
[j18]Alexandre Boyer
, Nicolas Nolhier, Fabrice Caignet, Sonia Ben Dhia:
Closed-Form Expressions of Electric and Magnetic Near-Fields for the Calibration of Near-Field Probes. IEEE Trans. Instrum. Meas. 70: 1-15 (2021)
2010 – 2019
- 2017
- [j17]Frédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur:
Prediction of LIN communication robustness against EFT events using dedicated failure models. Microelectron. Reliab. 76-77: 685-691 (2017) - 2016
- [j16]Frédéric Escudié, Fabrice Caignet, Nicolas Nolhier, Marise Bafleur:
Impact of non-linear capacitances on transient waveforms during system level ESD stress. Microelectron. Reliab. 64: 88-92 (2016) - 2015
- [j15]Marise Bafleur, Philippe Perdu, François Marc, Hélène Frémont, Nicolas Nolhier:
Editorial. Microelectron. Reliab. 55(9-10): 1269-1270 (2015) - [j14]Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran:
20 GHz on-chip measurement of ESD waveform for system level analysis. Microelectron. Reliab. 55(11): 2276-2283 (2015) - 2014
- [j13]Bertrand Courivaud, Nicolas Nolhier, Gilles Ferru, Marise Bafleur, Fabrice Caignet:
Reliability of ESD protection devices designed in a 3D technology. Microelectron. Reliab. 54(9-10): 2272-2277 (2014) - 2013
- [j12]Nicolas Monnereau, Fabrice Caignet, David Trémouilles, Nicolas Nolhier, Marise Bafleur:
Building-up of system level ESD modeling: Impact of a decoupling capacitance on ESD propagation. Microelectron. Reliab. 53(2): 221-228 (2013) - [j11]Fabrice Caignet, Nicolas Nolhier, Marise Bafleur, A. Wang, Nicolas Mauran:
On-chip measurement to analyze failure mechanisms of ICs under system level ESD stress. Microelectron. Reliab. 53(9-11): 1278-1283 (2013) - 2012
- [j10]Jinyu Jason Ruan, Nicolas Monnereau, David Trémouilles, Nicolas Mauran, Fabio Coccetti, Nicolas Nolhier, Robert Plana:
An Accelerated Stress Test Method for Electrostatically Driven MEMS Devices. IEEE Trans. Instrum. Meas. 61(2): 456-461 (2012)
2000 – 2009
- 2009
- [j9]Jinyu Jason Ruan, Nicolas Nolhier, George J. Papaioannou, David Trémouilles, Vincent Puyal, C. Villeneuve, T. Idda, Fabio Coccetti, Robert Plana:
Accelerated lifetime test of RF-MEMS switches under ESD stress. Microelectron. Reliab. 49(9-11): 1256-1259 (2009) - 2008
- [j8]Jinyu Jason Ruan, George J. Papaioannou, Nicolas Nolhier, Nicolas Mauran, Marise Bafleur, Fabio Coccetti, Robert Plana:
ESD failure signature in capacitive RF MEMS switches. Microelectron. Reliab. 48(8-9): 1237-1240 (2008) - 2007
- [j7]Jinyu Jason Ruan, Nicolas Nolhier, Marise Bafleur, Laurent Bary, Fabio Coccetti, T. Lisec, Robert Plana:
Electrostatic discharge failure analysis of capacitive RF MEMS switches. Microelectron. Reliab. 47(9-11): 1818-1822 (2007) - 2005
- [j6]Nicolas Guitard, Fabien Essely, David Trémouilles, Marise Bafleur, Nicolas Nolhier, Philippe Perdu, André Touboul, Vincent Pouget, Dean Lewis:
Different Failure signatures of multiple TLP and HBM Stresses in an ESD robust protection structure. Microelectron. Reliab. 45(9-11): 1415-1420 (2005) - 2004
- [j5]David Trémouilles, Marise Bafleur, Géraldine Bertrand, Nicolas Nolhier, Nicolas Mauran, Lionel Lescouzères:
Latch-up ring design guidelines to improve electrostatic discharge (ESD) protection scheme efficiency. IEEE J. Solid State Circuits 39(10): 1778-1782 (2004) - [j4]Nicolas Guitard, David Trémouilles, Marise Bafleur, Laurent Escotte, Laurent Bary, Philippe Perdu, Gérard Sarrabayrouse, Nicolas Nolhier, Roberto Reyna-Rojas:
Low Frequency Noise Measurements for ESD Latent Defect Detection in High Reliability Applications. Microelectron. Reliab. 44(9-11): 1781-1786 (2004) - 2003
- [j3]M. Zecri, P. Besse, Philippe Givelin, M. Nayrolles, Marise Bafleur, Nicolas Nolhier:
Determination of the ESD Failure Cause Through its Signature. Microelectron. Reliab. 43(9-11): 1551-1556 (2003) - 2001
- [j2]Géraldine Bertrand, Christelle Delage, Marise Bafleur, Nicolas Nolhier, Jean-Marie Dorkel, Quang Nguyen, Nicolas Mauran, David Trémouilles, Philippe Perdu:
Analysis and compact modeling of a vertical grounded-base n-p-n bipolar transistor used as ESD protection in a smart power technology. IEEE J. Solid State Circuits 36(9): 1373-1381 (2001)
1990 – 1999
- 1999
- [j1]Christelle Delage, Nicolas Nolhier, Marise Bafleur, Jean-Marie Dorkel, Jo Hamid, Philippe Givelin, Jacques Lin-Kwang:
The mirrored lateral SCR (MILSCR) as an ESD protection structure: design and optimization using 2-D device simulation. IEEE J. Solid State Circuits 34(9): 1283-1289 (1999)
Coauthor Index
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