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ORCIDDavid Roy 0001
Person information
- affiliation: STMicroelectronics, Crolles, France
Other persons with the same name
- David Roy — disambiguation page
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Journal Articles
- 2018
[j15]D. Nouguier, X. Federspiel, Gérard Ghibaudo
, M. Rafik, David Roy:
New NBTI models for degradation and relaxation kinetics valid over extended temperature and stress/recovery ranges. Microelectron. Reliab. 87: 106-112 (2018)- 2017
- [j14]Giulio Torrente, Jean Coignus, Alexandre Vernhet, Jean-Luc Ogier, David Roy, Gérard Ghibaudo:
Physically-based evaluation of aging contributions in HC/FN-programmed 40 nm NOR Flash technology. Microelectron. Reliab. 79: 281-287 (2017) - 2015
- [j13]Giulio Torrente, Jean Coignus, Sophie Renard, Alexandre Vernhet, Gilles Reimbold, David Roy, Gérard Ghibaudo:
Physically-based extraction methodology for accurate MOSFET degradation assessment. Microelectron. Reliab. 55(9-10): 1417-1421 (2015) - 2012
- [j12]Laurent Negre, David Roy, Florian Cacho, Patrick Scheer, Sebastien Jan, Samuel Boret, Daniel Gloria, Gérard Ghibaudo:
Reliability Characterization and Modeling Solution to Predict Aging of 40-nm MOSFET DC and RF Performances Induced by RF Stresses. IEEE J. Solid State Circuits 47(5): 1075-1083 (2012) - [j11]Yoann Mamy Randriamihaja, Vincent Huard, Xavier Federspiel, Alban Zaka, Pierpaolo Palestri, Denis Rideau, David Roy, Alain Bravaix:
Microscopic scale characterization and modeling of transistor degradation under HC stress. Microelectron. Reliab. 52(11): 2513-2520 (2012) - 2006
- [j10]C. R. Parthasarathy, Mickael Denais, Vincent Huard, G. Ribes, David Roy, Chloe Guérin, F. Perrier, E. Vincent, Alain Bravaix:
Designing in reliability in advanced CMOS technologies. Microelectron. Reliab. 46(9-11): 1464-1471 (2006) - 2005
- [j9]G. Ribes, S. Bruyère, Mickael Denais, David Roy, Gérard Ghibaudo:
Evidence and modelling current dependence of defect generation probability and its impact on charge to breakdown. Microelectron. Reliab. 45(5-6): 841-844 (2005) - [j8]G. Ribes, S. Bruyère, Mickael Denais, Frederic Monsieur, Vincent Huard, David Roy, Gérard Ghibaudo:
Multi-vibrational hydrogen release: Physical origin of Tbd, Qbd power-law voltage dependence of oxide breakdown in ultra-thin gate oxides. Microelectron. Reliab. 45(12): 1842-1854 (2005) - 2003
- [j7]Frederic Monsieur, E. Vincent, Vincent Huard, S. Bruyère, David Roy, Thomas Skotnicki, G. Pananakakis, Gérard Ghibaudo:
On the role of holes in oxide breakdown mechanism in inverted nMOSFETs. Microelectron. Reliab. 43(8): 1199-1202 (2003) - [j6]G. Ribes, S. Bruyère, Frederic Monsieur, David Roy, Vincent Huard:
New insights into the change of voltage acceleration and temperature activation of oxide breakdown. Microelectron. Reliab. 43(8): 1211-1214 (2003) - 2002
- [j5]David Roy, S. Bruyère, E. Vincent, Frederic Monsieur:
Series resistance and oxide thickness spread influence on Weibull breakdown distribution: New experimental correction for reliability projection improvement. Microelectron. Reliab. 42(9-11): 1497-1500 (2002) - [j4]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Gate oxide Reliability assessment optimization. Microelectron. Reliab. 42(9-11): 1505-1508 (2002) - 2001
- [j3]Sylvie Bruyère, David Roy, E. Robilliart, E. Vincent, Gérard Ghibaudo:
Body effect induced wear-out acceleration in ultra-thin oxides. Microelectron. Reliab. 41(7): 1031-1034 (2001) - [j2]Frederic Monsieur, E. Vincent, David Roy, S. Bruyère, G. Pananakakis, Gérard Ghibaudo:
Determination of Dielectric Breakdown Weibull Distribution Parameters Confidence Bounds for Accurate Ultrathin Oxide Reliability Predictions. Microelectron. Reliab. 41(9-10): 1295-1300 (2001) - [j1]S. Bruyère, Frederic Monsieur, David Roy, E. Vincent, Gérard Ghibaudo:
Failures in ultrathin oxides: Stored energy or carrier energy driven? Microelectron. Reliab. 41(9-10): 1367-1372 (2001)
Conference and Workshop Papers
- 2024
- [c15]X. Federspiel, Cheikh Diouf, B. Arunachalam, David Roy, Florian Cacho:
Non-conducting Hot carrier temperature activation and temperature sense effect. IRPS 2024: 1-6 - [c14]A. Divay, Cédric Dehos, Ismael Charlet, Fred Gaillard, B. Duriez, Xavier Garros, J. Antonijevic, Joycelyn Hai, Nathalie Revil, Jeremie Forest, Vincent Knopik, Florian Cacho, David Roy, X. Federspiel, S. Crémer, Pascal Chevalier:
A Methodology to Address RF Aging of 40nm CMOS PA Cells Under 5G mmW Modulation Profiles. IRPS 2024: 4 - 2023
- [c13]Mathieu Sicre, David Roy, Françis Calmon:
Hot-Carrier Degradation modeling of DCR drift in SPADs. ESSDERC 2023: 61-64 - [c12]C. Doyen, V. Yon, Xavier Garros, Luigi Basset, Tadeu Mota Frutuoso, C. Dagon, Cheikh Diouf, X. Federspiel, V. Millon, Frederic Monsieur, C. Pribat, David Roy:
Insight Into HCI Reliability on I/O Nitrided Devices. IRPS 2023: 1-5 - [c11]Mathieu Sicre, X. Federspiel, Bastien Mamdy, David Roy, Françis Calmon:
Characterization and modeling of DCR and DCR drift variability in SPADs. IRPS 2023: 1-5 - 2022
- [c10]Mathieu Sicre, Megan Agnew, Christel Buj, Caroline Coutier, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Statistical measurements and Monte-Carlo simulations of DCR in SPADs. ESSCIRC 2022: 193-196 - 2021
- [c9]Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSCIRC 2021: 143-146 - [c8]Mathieu Sicre, Megan Agnew, Christel Buj, Jean Coignus, Dominique Golanski, Rémi Helleboid, Bastien Mamdy, Isobel Nicholson, Sara Pellegrini, Denis Rideau, David Roy, Françis Calmon:
Dark Count Rate in Single-Photon Avalanche Diodes: Characterization and Modeling study. ESSDERC 2021: 143-146 - [c7]Louis Gerrer, Jacques Cluzel, Fred Gaillard, Xavier Garros, Xavier Federspiel, Florian Cacho, David Roy, E. Vincent:
BTI Arbitrary Stress Patterns Characterization & Machine-Learning optimized CET Maps Simulations. IRPS 2021: 1-5 - 2019
- [c6]Cheikh Diouf, N. Guitard, M. Rafik, J. J. Martinez, X. Federspiel, Alain Bravaix, D. Muller, David Roy:
Process Optimization for HCI Improvement in I/O Analog Devices. IRPS 2019: 1-6 - [c5]A. P. Nguyen, Xavier Garros, M. Rafik, Florian Cacho, David Roy, Xavier Federspiel, Fred Gaillard:
Impact of Passive & Active Load Gate Impedance on Breakdown Hardness in 28nm FDSOI Technology. IRPS 2019: 1-5 - 2018
- [c4]Antoine Laurent, Xavier Garros, Sylvain Barraud, J. Pelloux-Prayer, Mikaël Cassé, Fred Gaillard, X. Federspiel, David Roy, E. Vincent, Gérard Ghibaudo:
Performance & reliability of 3D architectures (πfet, Finfet, Ωfet). IRPS 2018: 6 - 2015
- [c3]A. Bezza, M. Rafik, David Roy, X. Federspiel, P. Mora, Cheikh Diouf, Vincent Huard, Gérard Ghibaudo:
Physical understanding of low frequency degradation of NMOS TDDB in High-k metal gate stack-based technology. Implication on lifetime assessment. IRPS 2015: 5 - 2008
- [c2]Patrice Garcia, Alain Chantre, Sébastien Pruvost, Pascal Chevalier, Sean T. Nicolson, David Roy, Sorin P. Voinigescu, Christophe Garnier:
Will BiCMOS stay competitive for mmW applications ? CICC 2008: 387-394 - 2002
- [c1]Thierry Devoivre, M. Lunenborg, C. Julien, J.-P. Carrere, P. Ferreira, W. J. Toren, A. VandeGoor, P. Gayet, T. Berger, O. Hinsinger, P. Vannier, Y. Trouiller, Y. Rody, P.-J. Goirand, R. Palla, I. Thomas, F. Guyader, David Roy, B. Borot, Nicolas Planes, Sylvie Naudet, F. Pico, D. Duca, F. Lalanne, D. Heslinga, M. Haond:
Validated 90nm CMOS Technology Platform with Low-k Copper Interconnects for Advanced System-on-Chip (SoC). MTDT 2002: 157-162
Coauthor Index
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