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ORCIDNathalie Malbert
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Journal Articles
- 2017
[j17]Kalparupa Mukherjee
, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
TCAD simulation capabilities towards gate leakage current analysis of advanced AlGaN/GaN HEMT devices. Microelectron. Reliab. 76-77: 350-356 (2017)- 2016
- [j16]H. Lakhdhar, Nathalie Labat, Arnaud Curutchet, Nicolas Defrance, Marie Lesecq, Jean-Claude de Jaeger, Nathalie Malbert:
Reliability assessment of ultra-short gate length AlGaN/GaN HEMTs on Si substrate by on-state step stress. Microelectron. Reliab. 64: 594-598 (2016) - 2015
- [j15]M. Rzin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, Laurent Brunel, Benoit Lambert:
Investigation of the dynamic on-state resistance of AlGaN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1672-1676 (2015) - 2013
- [j14]W. Ben Naceur, Nathalie Malbert, Nathalie Labat, Hélène Frémont, D. Carisetti, J. C. Clement, J. L. Muraro, Barbara Bonnet:
Failure analysis of GaAs microwave devices with plastic encapsulation by electro-optical techniques. Microelectron. Reliab. 53(9-11): 1375-1380 (2013) - [j13]Laurent Brunel, Benoit Lambert, P. Mezenge, J. Bataille, D. Floriot, Jan Grünenpütt, Hervé Blanck, D. Carisetti, Y. Gourdel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat:
Analysis of Schottky gate degradation evolution in AlGaN/GaN HEMTs during HTRB stress. Microelectron. Reliab. 53(9-11): 1450-1455 (2013) - [j12]S. Karboyan, Jean-Guy Tartarin, M. Rzin, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, M. Mermoux, E. Romain-Latu, F. Thomas, C. Bouexière, C. Moreau:
Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements. Microelectron. Reliab. 53(9-11): 1491-1495 (2013) - 2012
- [j11]Benoit Lambert, Nathalie Labat, Dominique Carisetti, Serge Karboyan, Jean-Guy Tartarin, Jim Thorpe, Laurent Brunel, Arnaud Curutchet, Nathalie Malbert, Eddy Latu-Romain, Michel Mermoux:
Evidence of relationship between mechanical stress and leakage current in AlGaN/GaN transistor after storage test. Microelectron. Reliab. 52(9-10): 2184-2187 (2012) - 2010
- [j10]Mustapha Faqir, Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Benoit Lambert, Giovanni Verzellesi, Fausto Fantini:
Analysis of current collapse effect in AlGaN/GaN HEMT: Experiments and numerical simulations. Microelectron. Reliab. 50(9-11): 1520-1522 (2010) - 2009
- [j9]Nathalie Malbert, Nathalie Labat, Arnaud Curutchet, C. Sury, V. Hoel, J.-C. de Jaeger, Nicolas Defrance, Y. Douvry, Christian Dua, Mourad Oualli, C. Bru-Chevallier, Jean-Marie Bluet, W. Chikhaoui:
Characterisation and modelling of parasitic effects and failure mechanisms in AlGaN/GaN HEMTs. Microelectron. Reliab. 49(9-11): 1216-1221 (2009) - 2008
- [j8]Mohsine Bouya, Nathalie Malbert, Nathalie Labat, D. Carisetti, Philippe Perdu, J. C. Clement, Benoit Lambert, M. Bonnet:
Analysis of traps effect on AlGaN/GaN HEMT by luminescence techniques. Microelectron. Reliab. 48(8-9): 1366-1369 (2008) - 2007
- [j7]Mohsine Bouya, D. Carisetti, Nathalie Malbert, Nathalie Labat, Philippe Perdu, J. C. Clement, M. Bonnet, G. Pataut:
Study of passivation defects by electroluminescence in AlGaN/GaN HEMTS on SiC. Microelectron. Reliab. 47(9-11): 1630-1633 (2007) - 2006
- [j6]A. Sozza, Arnaud Curutchet, Christian Dua, Nathalie Malbert, Nathalie Labat, André Touboul:
AlGaN/GaN HEMT Reliability Assessment by means of Low Frequency Noise Measurements. Microelectron. Reliab. 46(9-11): 1725-1730 (2006) - 2005
- [j5]Naoufel Ismail, Nathalie Malbert, Nathalie Labat, André Touboul, Jean-Luc Muraro, F. Brasseau, D. Langrez:
Safe operating area of GaAs MESFET and PHEMT for amplification in overdrive operating conditions. Microelectron. Reliab. 45(9-11): 1611-1616 (2005) - 2004
- [j4]Nathalie Labat, Nathalie Malbert, Cristell Maneux, André Touboul:
Low frequency noise as a reliability diagnostic tool in compound semiconductor transistors. Microelectron. Reliab. 44(9-11): 1361-1368 (2004) - 2003
- [j3]Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003) - 2002
- [j2]Nathalie Labat, Nathalie Malbert, Benoit Lambert, André Touboul, F. Garat, B. Proust:
Degradation mechanisms induced by thermal and bias stresses in InP HEMTs. Microelectron. Reliab. 42(9-11): 1575-1580 (2002) - 2001
- [j1]Benoit Lambert, Nathalie Malbert, Nathalie Labat, Frédéric Verdier, André Touboul, P. Huguet, R. Bonnet, G. Pataut:
Evolution of LF noise in Power PHEMT's submitted to RF and DC Step Stresses. Microelectron. Reliab. 41(9-10): 1573-1578 (2001)
Conference and Workshop Papers
- 2023
- [c3]N. Said, Kathia Harrouche, Farid Medjdoub, Nathalie Labat, Jean-Guy Tartarin, Nathalie Malbert:
Thermal and statistical analysis of various AlN/GaN HEMT geometries for millimeter Wave applications. IRPS 2023: 1-5 - 2018
- [c2]Kalparupa Mukherjee, Frédéric Darracq, Arnaud Curutchet, Nathalie Malbert, Nathalie Labat:
Comprehensive study into underlying mechanisms of anomalous gate leakage degradation in GaN high electron mobility transistors. IRPS 2018: 4 - 2012
- [c1]Laurent Brunel, Nathalie Malbert, Arnaud Curutchet, Nathalie Labat, Benoit Lambert:
Kink effect characterization in AlGaN/GaN HEMTs by DC and drain current transient measurements. ESSDERC 2012: 270-273
Coauthor Index
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