default search action
Google
Google Scholar
Semantic Scholar
Internet Archive Scholar
CiteSeerX
ORCIDChristophe Gaquière
Person information
Refine list
refinements active!
zoomed in on ?? of ?? records
view refined list in
export refined list as
Journal Articles
- 2023
[j14]Driss Aouladhadj
, Ettien Lazare Kpre, Virginie Deniau, Aymane Kharchouf, Christophe Gransart, Christophe Gaquière:
Drone Detection and Tracking Using RF Identification Signals. Sensors 23(17): 7650 (2023)- 2022
- [j13]Issa Alaji, Etienne Okada, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière:
Temperature compensated power detector towards power consumption optimization in 5G devices. Microelectron. J. 120: 105351 (2022) - 2021
- [j12]Issa Alaji, Walid Aouimeur, Haitham Ghanem, Etienne Okada, Sylvie Lépilliet, Daniel Gloria, Guillaume Ducournau, Christophe Gaquière:
Design of zero bias power detectors towards power consumption optimization in 5G devices. Microelectron. J. 111: 105035 (2021) - [j11]Marc Margalef-Rovira, Olivier Occello, Abdelhalim A. Saadi, Vanessa Avramovic, Sylvie Lépilliet, Loic Vincent, Manuel J. Barragán, Emmanuel Pistono, Sylvain Bourdel, Christophe Gaquière, Philippe Ferrari:
mm-Wave Through-Load Element for On-Wafer Measurement Applications. IEEE Trans. Circuits Syst. I Regul. Pap. 68(8): 3170-3183 (2021) - 2020
- [j10]Mohammad Abdul Alim, A. Tahsin, Ali A. Rezazadeh, Christophe Gaquière:
Extraction of nonlinear Taylor series coefficients for GaN HEMT over multi-bias condition. Microelectron. J. 96: 104700 (2020) - [j9]Mohammad Abdul Alim, Mayahsa M. Ali, Ali A. Rezazadeh, Christophe Gaquière:
Temperature Dependence of the Taylor Series Coefficients and Intermodulation Distortion Characteristics of GaN HEMT. IEEE Trans. Comput. Aided Des. Integr. Circuits Syst. 39(3): 552-559 (2020) - 2015
- [j8]Sébastien Petitdidier, Fanny Berthet, Yannick Guhel, Jean-Lionel Trolet, Philippe Mary, Christophe Gaquière, Bertrand Boudart:
Characterization and analysis of electrical trap related effects on the reliability of AlInN/GaN HEMTs. Microelectron. Reliab. 55(9-10): 1719-1723 (2015) - 2012
- [j7]Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière:
Annihilation of electrical trap effects by irradiating AlGaN/GaN HEMTs with low thermal neutrons radiation fluence. Microelectron. Reliab. 52(9-10): 2159-2163 (2012) - [j6]Florent Gamand, Ming Dong Li, Christophe Gaquière:
A 10-MHz GaN HEMT DC/DC Boost Converter for Power Amplifier Applications. IEEE Trans. Circuits Syst. II Express Briefs 59-II(11): 776-779 (2012) - 2011
- [j5]Fanny Berthet, Yannick Guhel, Hamid Gualous, Bertrand Boudart, Jean-Lionel Trolet, Marc Piccione, Christophe Gaquière:
Characterization of the self-heating of AlGaN/GaN HEMTs during an electrical stress by using Raman spectroscopy. Microelectron. Reliab. 51(9-11): 1796-1800 (2011) - 2009
- [j4]Malek Gassoumi, Jean-Marie Bluet, Christophe Gaquière, Gérard Guillot, Hassen Maaref:
Deep levels and nonlinear characterization of AlGaN/GaN HEMTs on silicon carbide substrate. Microelectron. J. 40(8): 1161-1165 (2009) - 2006
- [j3]Nabil Sghaier, M'Hamed Trabelsi, Noureddine Yacoubi, Jean-Marie Bluet, Abdelkader Souifi, Gérard Guillot, Christophe Gaquière, J. C. DeJaeger:
Traps centers and deep defects contribution in current instabilities for AlGaN/GaN HEMT's on silicon and sapphire substrates. Microelectron. J. 37(4): 363-370 (2006) - 2004
- [j2]Fabiana Rampazzo, Roberto Pierobon, D. Pacetta, Christophe Gaquière, Didier Théron, Bertrand Boudart, Gaudenzio Meneghesso, Enrico Zanoni:
Hot carrier aging degradation phenomena in GaN based MESFETs. Microelectron. Reliab. 44(9-11): 1375-1380 (2004) - 2003
- [j1]Arnaud Curutchet, Nathalie Malbert, Nathalie Labat, André Touboul, Christophe Gaquière, A. Minko, Michael J. Uren:
Low frequency drain noise comparison of AlGaN/GaN HEMT's grown on silicon, SiC and sapphire substrates. Microelectron. Reliab. 43(9-11): 1713-1718 (2003)
Conference and Workshop Papers
- 2024
- [c6]Hassan Aboushady, Noemie Beringuier-Boher, Kelly Burke, Philippe Dallemagne, Mario De Biase, Manuel Di Frangia, Virginie Deniau, Enrico Ferrari, Christophe Gaquière, Dominique Morche, Fabio Patrone, Stefano Pesci, Luigi Pomante, Andries Stam, Vincenzo Stornelli, Haralampos-G. Stratigopoulos, Mottaqiallah Taouil, Emmanuel Vaumorin, Jonathan Villain, Sander Steeghs:
Trusted SMEs for Sustainable Growth of Europeans Economical Backbone to Strengthen the Digital Sovereignty: The KDT Resilient Trust Project. DSD 2024: 620-627 - 2022
- [c5]William R. Eisenstadt, Mark Roos, Devin Morris, José Luis González-Jiménez, Christopery Mounet, Manuel J. Barragán, Gildas Léger, Florent Cilici, Estelle Lauga-Larroze, Salvador Mir, Sylvain Bourdel, Marc Margalef-Rovira, Issa Alaji, Haitham Ghanem, Guillaume Ducournau, Christophe Gaquière:
Special Session on RF/5G Test. ETS 2022: 1-9 - 2021
- [c4]Marc Margalef-Rovira, Christophe Gaquière, Antonio Augusto Lisboa de Souza, Loic Vincent, Manuel J. Barragán, Emmanuel Pistono, Florence Podevin, Philippe Ferrari:
mm-Wave Single-Pole Double-Throw switches: HBT- vs MOSFET-based designs. NEWCAS 2021: 1-4 - 2020
- [c3]Marc Margalef-Rovira, Abdelhalim A. Saadi, Sylvain Bourdel, Manuel J. Barragán, Emmanuel Pistono, Christophe Gaquière, Philippe Ferrari:
mm-Wave Through-Load Switch for in-situ Vector Network Analyzer on a 55-nm BiCMOS Technology. NEWCAS 2020: 82-85 - 2018
- [c2]Alexis Gauthier, Julien Borrel, Pascal Chevalier, Grégory Avenier, A. Montagné, M. Juhel, R. Duru, L.-R. Clément, C. Borowiak, Michel Buczko, Christophe Gaquière:
450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. BCICTS 2018: 72-75 - 2014
- [c1]Pietro M. Ferreira, Cora Donche, Kamel Haddadi, Tuami Lasri, Gilles Dambrine, Christophe Gaquière, Thomas Quemerais, Daniel Gloria:
1-20 Ghz kΩ-range BiCMOS 55 nm reflectometer. NEWCAS 2014: 385-388
Informal and Other Publications
- 2020
- [i2]Arun Bhaskar, Justine Philippe, Vanessa Avramovic, Flavie Braud, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois:
Substrate engineering of inductors on SOI for improvement of Q-factor and application in LNA. CoRR abs/2008.09030 (2020) - [i1]Arun Bhaskar, Justine Philippe, Flavie Braud, Etienne Okada, Vanessa Avramovic, Jean-François Robillard, Cédric Durand, Daniel Gloria, Christophe Gaquière, Emmanuel Dubois:
Large-area femtosecond laser milling of silicon employing trench analysis. CoRR abs/2008.13205 (2020)
Coauthor Index
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.
Unpaywalled article links
Add open access links from 
to the list of external document links (if available).
Privacy notice: By enabling the option above, your browser will contact the API of unpaywall.org to load hyperlinks to open access articles. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Unpaywall privacy policy.
Archived links via Wayback Machine
For web page which are no longer available, try to retrieve content from the 
of the Internet Archive (if available).
Privacy notice: By enabling the option above, your browser will contact the API of archive.org to check for archived content of web pages that are no longer available. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Internet Archive privacy policy.
Reference lists
Add a list of references from 
, 
, and 
to record detail pages.
load references from crossref.org and opencitations.net
Privacy notice: By enabling the option above, your browser will contact the APIs of crossref.org, opencitations.net, and semanticscholar.org to load article reference information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the Crossref privacy policy and the OpenCitations privacy policy, as well as the AI2 Privacy Policy covering Semantic Scholar.
Citation data
Add a list of citing articles from and to record detail pages.
load citations from opencitations.net
Privacy notice: By enabling the option above, your browser will contact the API of opencitations.net and semanticscholar.org to load citation information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the OpenCitations privacy policy as well as the AI2 Privacy Policy covering Semantic Scholar.
OpenAlex data
Load additional information about publications from 
.
Privacy notice: By enabling the option above, your browser will contact the API of openalex.org to load additional information. Although we do not have any reason to believe that your call will be tracked, we do not have any control over how the remote server uses your data. So please proceed with care and consider checking the information given by OpenAlex.
last updated on 2024-11-20 21:55 CET by the dblp team
all metadata released as open data under CC0 1.0 license
see also: Terms of Use | Privacy Policy | Imprint
dblp was originally created in 1993 at:
since 2018, dblp has been operated and maintained by:
the dblp computer science bibliography is funded and supported by:
