default search action
"450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a ..."
Alexis Gauthier et al. (2018)
- Alexis Gauthier, Julien Borrel, Pascal Chevalier, Grégory Avenier, A. Montagné, M. Juhel, R. Duru, L.-R. Clément, C. Borowiak, Michel Buczko, Christophe Gaquière:
450 GHz fT SiGe: C HBT Featuring an Implanted Collector in a 55-nm CMOS Node. BCICTS 2018: 72-75
manage site settings
To protect your privacy, all features that rely on external API calls from your browser are turned off by default. You need to opt-in for them to become active. All settings here will be stored as cookies with your web browser. For more information see our F.A.Q.