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ORCIDHitoshi Wakabayashi
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2020 – today
- 2022
[j11]Masamoto Fukawa, Xiaoqi Deng, Shinya Imai, Taiga Horiguchi, Ryo Ono
, Ikumi Rachi, Sihan A, Kazuma Shinomura, Shunsuke Niwa, Takeshi Kudo, Hiroyuki Ito, Hitoshi Wakabayashi, Yoshihiro Miyake, Atsushi Hori:
A Novel Method for Lightning Prediction by Direct Electric Field Measurements at the Ground Using Recurrent Neural Network. IEICE Trans. Inf. Syst. 105-D(9): 1624-1628 (2022)
2010 – 2019
- 2019
- [c5]Toshiro Hiramoto, Katsumi Satoh, Tomoko Matsudai, Wataru Saito, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Atsushi Ogura, Shinichi Nishizawa, Ichiro Omura, Hiromichi Ohashi, Kazuo Itou, Toshihiro Takakura, Munetoshi Fukui, Shinichi Suzuki, Ken Takeuchi, Masanori Tsukuda, Yohichiroh Numasawa:
Switching of 3300V Scaled IGBT by 5V Gate Drive. ASICON 2019: 1-3 - 2018
- [j10]Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima:
Improvement of SiO2/4H-SiC Interface properties by post-metallization annealing. Microelectron. Reliab. 84: 226-229 (2018) - [j9]Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima:
Effect of lanthanum silicate interface layer on the electrical characteristics of 4H-SiC metal-oxide-semiconductor capacitors. Microelectron. Reliab. 84: 248-252 (2018) - [c4]Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima, Masahiro Watanabe, Naoyuki Shigvo, Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Lwai:
Verification of the Injection Enhancement Effect in IGBTs by Measuring the Electron and Hole Currents Separately. ESSDERC 2018: 26-29 - [c3]Kuniyuki Kakushima, Takuya Hoshii, M. Watanabe, N. Shizyo, K. Furukawa, Takuya Saraya, T. Takakura, K. Itou, M. Fukui, S. Suzuki, Ken Takeuchi, Iriya Muneta, Hitoshi Wakabayashi, Y. Numasawa, Atsushi Ogura, Shinichi Nishizawa, Kazuo Tsutsui, Toshiro Hiramoto, Hiromichi Ohashi, Hiroshi Iwai:
New Methodology for Evaluating Minority Carrier Lifetime for Process Assessment. VLSI Circuits 2018: 105-106 - 2017
- [c2]Kazuo Tsutsui, Kuniyuki Kakushima, Takuya Hoshii, A. Nakajima, Shinichi Nishizawa, Hitoshi Wakabayashi, Iriya Muneta, K. Sato, Tomoko Matsudai, Wataru Saito, Takuya Saraya, K. Itou, M. Fukui, S. Suzuki, Masaharu Kobayashi, T. Takakura, Toshiro Hiramoto, Atsushi Ogura, Y. Numasawa, Ichiro Omura, Hiromichi Ohashi, Hiroshi Iwai:
3D scaling for insulated gate bipolar transistors (IGBTs) with low Vce(sat). ASICON 2017: 1137-1140 - 2016
- [j8]J. Chen, Takamasa Kawanago, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, D. Nohata, Hiroshi Nohira, Kuniyuki Kakushima:
La2O3 gate dielectrics for AlGaN/GaN HEMT. Microelectron. Reliab. 60: 16-19 (2016) - [j7]M. S. Hadi, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Resistive switching properties of a thin SiO2 layer with CeOx buffer layer on n+ and p+ Si bottom electrodes. Microelectron. Reliab. 63: 42-45 (2016) - [j6]J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current. Microelectron. Reliab. 63: 52-55 (2016) - 2015
- [j5]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Improvement of charge/discharge performance for lithium ion batteries with tungsten trioxide electrodes. Microelectron. Reliab. 55(2): 402-406 (2015) - [j4]Wei Li, Akito Sasaki, Hideyuki Oozu, Katsuaki Aoki, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Electron transport mechanism of tungsten trioxide powder thin film studied by investigating effect of annealing on resistivity. Microelectron. Reliab. 55(2): 407-410 (2015) - 2014
- [j3]Chunmeng Dou, Tomoya Shoji, Kazuhiro Nakajima, Kuniyuki Kakushima, Parhat Ahmet, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Characterization of interface state density of three-dimensional Si nanostructure by charge pumping measurement. Microelectron. Reliab. 54(4): 725-729 (2014) - [j2]Yan Wu, Hiroyuki Hasegawa, Kuniyuki Kakushima, Kenji Ohmori, Takanobu Watanabe, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Yoshinori Kataoka, Kenji Natori, Keisaku Yamada, Hiroshi Iwai:
A novel hetero-junction Tunnel-FET using Semiconducting silicide-Silicon contact and its scalability. Microelectron. Reliab. 54(5): 899-904 (2014) - 2013
- [c1]Takamasa Kawanago, Kuniyuki Kakushima, Yoshinori Kataoka, Akira Nishiyama, Nobuyuki Sugii, Hitoshi Wakabayashi, Kazuo Tsutsui, Kenji Natori, Hiroshi Iwai:
Advantage of TiN Schottky gate over conventional Ni for improved electrical characteristics in AlGaN/GaN HEMT. ESSDERC 2013: 107-110
1990 – 1999
- 1997
- [j1]Masanori Izumikawa, Hiroyuki Igura, Hitoshi Wakabayashi, Ken Nakajima, Tohru Mogami, Tadahiko Horiuchi, Masakazu Yamashina:
A 0.25-μm CMOS 0.9-V 100-MHz DSP core. IEEE J. Solid State Circuits 32(1): 52-61 (1997)
Coauthor Index
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