"Improvement of SiO2/4H-SiC Interface properties by ..."

Yiming Lei et al. (2018)

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DOI: 10.1016/J.MICROREL.2018.03.036

access: closed

type: Journal Article

metadata version: 2020-02-22

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Yiming Lei, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Masayuki Furuhashi, Shingo Tomohisa, Satoshi Yamakawa, Kuniyuki Kakushima:
Improvement of SiO₂/4H-SiC Interface properties by post-metallization annealing. Microelectron. Reliab. 84: 226-229 (2018)

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