"Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low ..."

J. Chen et al. (2016)

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DOI: 10.1016/J.MICROREL.2016.05.014

access: closed

type: Journal Article

metadata version: 2020-02-22

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J. Chen, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai, Kuniyuki Kakushima:
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current. Microelectron. Reliab. 63: 52-55 (2016)

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